Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019The electrical properties of high performance multicrystalline silicon and mono-like silicon: Material limitations and cell potential
Sio, Hang Cheong; Phang, Sieu Pheng; Fell, Andreas; Wang, Haitao; Zheng, Peiting; Chen, D.K.; Zhang, Xinyu; Zhang, Tao; Wang, Qi; Jin, Hao; Macdonald, Daniel
Journal Article
2017Grain boundaries and dislocations in Si-bricks: Inline characterization on as-cut wafers
Strauch, T.; Demant, M.; Krenckel, P.; Riepe, S.; Rein, S.
Journal Article
2015Atomistically enabled nonsingular anisotropic elastic representation of near-core dislocation stress fields in alpha-iron
Seif, D.; Po, G.; Mrovec, M.; Lazar, M.; Elsässer, C.; Gumbsch, P.
Journal Article
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
2015Theoretical and experimental study of the core structure and mobility of dislocations and their influence on the ferroelectric polarization in perovskite KNbO3
Hirel, P.; Mark, A.F.; Castillo-Rodriguez, M.; Sigle, W.; Mrovec, M.; Elsässer, C.
Journal Article
2014Continuum dislocation dynamics: Towards a physical theory of crystal plasticity
Hochrainer, T.; Sandfeld, S.; Zaiser, M.; Gumbsch, P.
Journal Article
2014A continuum formulation of stress correlations of dislocations in two dimensions
Dickel, D.E.; Schulz, K.; Schmitt, S.; Gumbsch, P.
Journal Article
2013Atomistic aspects of 1/2(1 1 1) screw dislocation behavior in alpha-iron and the derivation of microscopic yield criterion
Chen, Z.M.; Mrovec, M.; Gumbsch, P.
Journal Article
2013Mechanisms of dislocation multiplication at crack tips
Bitzek, E.; Gumbsch, P.
Journal Article
2012Fast method to determine the structural defect density of 156 x 156 mm2 Mc-Si wafers
Bakowskie, R.; Kesser, G.; Richter, R.; Lausch, D.; Eidner, A.; Clemens, P.; Petter, K.
Journal Article
2012SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV
Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Journal Article
1988Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K.
Journal Article