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| 2019 | Multiwavelength digital holography in the presence of vibrations: Laterally resolved multistep phase-shift extraction
Seyler, Tobias; Bienkowski, Lasse; Beckmann, Tobias; Fratz, Markus; Bertz, Alexander; Carl, Daniel | Journal Article |
| 2013 | A common-path interferometer including integrated single-prism beam shaping
Gerhard, C.; Heine, J.; Bahr, B.; Brückner, S.; Viöl, W. | Journal Article |
| 2011 | Multi-wavelength digital holography for 3D-shape-measurements on rough surfaces
Fratz, M.; Carl, D.; Höfler, H.; Skoczowski, D.; Heuer, A. | Conference Paper |
| 2009 | Short-pulse high-power operation of GaSb-based diode lasers
Müller, M.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Wagner, J. | Journal Article |
| 2008 | 10 W high-efficiency high-brightness tapered diode lasers at 976 nm
Ostendorf, R.; Kaufel, G.; Moritz, R.; Mikulla, M.; Ambacher, O.; Kelemen, M.; Gilly, J. | Conference Paper |
| 2008 | 5 W frequency stabilized 976 nm tapered diode laser
Friedmann, P.; Gilly, J.; Moritz, S.; Ostendorf, R.; Kelemen, M.T. | Conference Paper |
| 2008 | High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J. | Conference Paper |
| 2008 | High-brightness quantum well and quantum dot tapered lasers
Michel, N.; Krakowski, M.; Hassiaoui, I.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Weinmann, P.; Zimmermann, C.; Kaiser, W.; Kamp, M.; Forchel, A.; Pavelescu, E.-M.; Reithmaier, J.-P.; Sumpf, B.; Erbert, G.; Kelemen, M.; Ostendorf, R.; García-Tijero, J.-M.; Odriozola, H.; Esquivias, I. | Conference Paper |
| 2008 | High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J. | Conference Paper |
| 2008 | Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure
Bückers, C.; Thränhardt, A.; Koch, S.W.; Rattunde, Marcel; Schulz, N.; Wagner, Joachim; Hader, J.; Moloney, J.V. | Journal Article |
| 2006 | GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J. | Journal Article |
| 2006 | High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
Eichhorn, M.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J. | Journal Article |
| 2006 | High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J. | Journal Article |
| 2006 | High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C. | Conference Paper |
| 2005 | (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
Wagner, J.; Geerlings, E.; Kaufel, G.; Kelemen, M.T.; Manz, C.; Pfahler, C.; Rattunde, M.; Schmitz, J. | Conference Paper |
| 2005 | GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2005 | High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J. | Conference Paper |
| 2005 | High-power diode laser bars as pump sources for fiberlasers and amplifiers
Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; Tünnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A. | Conference Paper |
| 2004 | Astigmatism and beam quality of high-brightness tapered diode lasers
Kelemen, M.T.; Weber, J.; Kallenbach, S.; Pfahler, C.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2004 | Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Journal Article |
| 2004 | GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence
Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J. | Conference Paper |
| 2004 | High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R. | Conference Paper |
| 2004 | Infrared semiconductor lasers for sensing and diagnostics
Wagner, J.; Mann, C.; Rattunde, M.; Weimann, G. | Journal Article |
| 2004 | Interband type-II miniband-to-bound state diode lasers for the midinfrared
Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J. | Journal Article |
| 2004 | Room-temperature external cavity GaSb-based diode laser around 2.13 µm
Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J. | Journal Article |
| 2003 | Developments in tapered lasers at 980 nm to 1060 nm
Mikulla, M.; Kelemen, M.T.; Weber, J.; Walther, M.; Weimann, G. | Conference Paper |
| 2003 | Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
Rinner, F.; Rogg, J.; Kelemen, M.T.; Mikulla, M.; Weimann, G.; Tomm, J.W.; Thamm, E.; Poprawe, R. | Journal Article |
| 2003 | Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Conference Paper |
| 2003 | Improved brightness using tapered diode lasers
Kelemen, M.T.; Weber, J.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2003 | Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M. | Dissertation |
| 2003 | Laser beam soldering of microoptical components
Eberhardt, R.; Banse, H.; Beckert, E.; Stöckl, W. | Conference Paper |
| 2003 | Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J. | Conference Paper |
| 2003 | Violet and blue laser diodes make strides
Haerle, V.; Lell, A.; Wagner, J. | Journal Article |
| 2002 | 1.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Journal Article |
| 2002 | Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J. | Journal Article |
| 2002 | Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J. | Conference Paper |
| 2002 | Laser joining of glass with silicon
Witte, R.; Herfurth, H.; Heinemann, S. | Conference Paper |
| 2001 | High Power 980 nm Laser Diodes by MBE
Mikulla, M.; Kelemen, M.T.; Walther, M.; Kiefer, R.; Moritz, R.; Weimann, G. | Conference Paper |
| 2001 | Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J. | Conference Paper |
| 2001 | Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J. | Conference Paper |
| 2000 | 2 µm room-temperature diode lasers for Co(2)-detection
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.; Beyer, T.; Lambrecht, A. | Conference Paper |
| 2000 | High-efficiency high-power InAlGaAs laser diodes at 980 nm
Mikulla, M.; Schmitt, A.; Bihlmann, G.; Weber, B.; Moritz, R.; Müller, S.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1999 | Assembly of micro-optical components for beam transformation systems of high power laser diode bars
Kräplin, A.; Possner, T.; Messerschmidt, B.; Höfer, B.; Schreiber, P. | Conference Paper |
| 1999 | Auftragsschweissen mit dem Hochleistungs-Diodenlaser
Richter, A.; Nowotny, S.; Naumann, T.; Beyer, E. | Journal Article |
| 1999 | High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G. | Conference Paper |
| 1999 | High-power InAlGaAs laser diodes with high efficiency at 980 nm
Mikulla, M.; Schmitt, A.; Walther, M.; Kiefer, R.; Moritz, R.; Müller, S.; Sah, R.E.; Braunstein, J.; Weimann, G. | Conference Paper |
| 1999 | Packaging of OEICs with tapered fibers for optical communications systems with up to 45 GHz modulation bandwidth
Fischer, U.H.P.; Peters, K.; Ziegler, R.; Pech, D.; Kilk, A.; Mekonnen, G.G.; Jacumeit, G. | Conference Paper |
| 1999 | Randschichtbehandlung mit Hochleistungs-Diodenlasern
Schürmann, B.; Vitr, G.; Wissenbach, K. | Journal Article |
| 1998 | Halbleiterlaser
Metzger, Stefan | Journal Article |
| 1998 | Linewidth narrowing of 10 mu m diode lasers by external feedback
Parvitte, B.; Zeninari, V.; Courtois, D.; Delahaigue, A.; Thiebeaux, C.; Beyer, T.; Schlegelmich, H.; Lambrecht, A.; Tacke, M. | Journal Article |
| 1998 | Monomode emission with external cavity lasers in the mid-infrared region
Beyer, T.; Tacke, M.; Lambrecht, A. | Journal Article |
| 1997 | Advanced concepts of using diode lasers in materials processing
Loosen, P. | Conference Paper |
| 1997 | Nd:YAG slab laser partially end-pumped by diode laser stack
Liao, Y.; Du, K.; Falter, S.; Zhang, J.; Quade, M.; Loosen, P.; Poprawe, R. | Conference Paper |
| 1996 | Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J. | Journal Article |
| 1996 | Single-frequency InAsSb lasers emitting at 3.4 mu m
Popov, A.; Sherstnev, V.; Yakovlev, Y.; Mücke, R.; Werle, P. | Journal Article |
| 1996 | Spectroscopic trace gas analysis using semiconductor diode lasers
Werle, P. | Journal Article |
| 1995 | State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications
Diehl, R.; Schlechtweg, M. | Conference Paper |
| 1992 | Analysis of trace components in automotive exhaust gas by TDLS
Riedel, W.J.; Grisar, R.; Klocke, U.; Knothe, M.; Wolf, H.; Schottka, P.; Bessey, E.; Pelz, N. | Conference Paper |
| 1992 | Cooperative effort on optical interconnects in the German National Joint Program "Photonics".
Diehl, R. | Conference Paper |
| 1992 | Monitoring of gaseous pollutants by tunable diode lasers '91. Proceedings
: Grisar, R.; Böttner, H.; Tacke, M.; Restelli, G. | Conference Proceedings |
| 1992 | Stabilization of 3.3 and 5.1 mym lead-salt diode lasers by optical feelback
Mürzt, M.; Schaefer, M.; Schneider, M.; Wells, J.S.; Urban, W.; Schiessl, U.; Tacke, M. | Journal Article |
| 1992 | TDLS analysis of water vapour traces in semiconductor process gas
Kästle, R.; Grisar, R.; Tacke, M.; Dornisch, D.; Scholz, C. | Conference Paper |
| 1991 | High sensitivity hydrogen fluoride gas analyzer using laser diodes
Wörner, R.; Grisar, R.; Tacke, M. | Conference Paper |
| 1991 | High-frequency intensity noise of lead-salt diode lasers.
Fischer, H.; Tacke, M. | Journal Article |
| 1991 | Infrared diode laser exhaust gas analyser for trace components
Bessey, E.; Schottka, P.; Pelz, N.; Grisar, R.; Klocke, U.; Knothe, M.; Riedel, W.J.; Wolf, H. | Conference Paper |
| 1991 | Infrared fibre optical components for diode laser trace gas analyzers
Grisar, R.; Anders, J.; Knothe, M.; Riedel, W.J. | Conference Paper |
| 1991 | Low-frequency amplitude-noise characteristics of lead-salt diode lasers fabricated by molecular-beam-epitaxy.
Fischer, H.; Halford, B.; Tacke, M.; Wolf, H. | Journal Article |
| 1991 | Optics for tunable diode laser spectrometers.
Knothe, M.; Riedel, W.J. | Conference Paper |
| 1990 | "Mushroom" double-channel double-heterostructure lead chalcogenide lasers made by chemical etching
Böttner, H.; Schlereth, K.-H.; Tacke, M. | Journal Article |
| 1990 | Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE
Böttner, H.; Lambrecht, A.; Schlereth, K.-H.; Spanger, B.; Tacke, M. | Journal Article |
| 1990 | Dependence of lead chalcogenide diode laser radiation on lattice misfit induced stress
Böttner, H.; Schießl, U.; Tacke, M.; Schiessl, U. | Journal Article |