Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
Matthus, C.D.; Huerner, A.; Erlbacher, T.; Bauer, A.; Frey, L.
Journal Article
2018Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Conference Paper
2017Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
2013Extending the power cycling lifetime of SiC diodes (by increased cooling temperatures)
Hutzler, Aaron; Schletz, Andreas; Tokarski, Adam
2010InP-based unipolar heterostructure diode for vertical integration, level shifting, and small signal rectification
Prost, W.; Zhang, D.; Münstermann, B.; Feldengut, T.; Geitmann, R.; Poloczek, A.; Tegude, F.-J.
Journal Article
2006SPICE modeling of resistive, diode, and pyroelectric bolometer cells
Vogt, H.
Conference Paper
2006Stressarmes Kleben in der Elektro-Optik. Teil 1
Gesang, T.; Friedsam, G.
Journal Article
1992Shallow p-n junctions produced by laser doping with boron silicate glass
Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.
Conference Paper
1991Pb1-xEuxSe photodiodes for the 3 - 5 mym ranges.
Guan, Y.; Halford, B.; Tacke, M.
Journal Article