Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1994The transition from dilute aluminium delta-structures to an AlAs monolayer in GaAs and a comparison with Si delta-doping
Ashwin, M.J.; Fahy, M.R.; Hart, L.; Newman, R.C.; Wagner, J.
Journal Article
1993Two-dimensional hole gas and Fermi-edge singularity in Be delta-doped GaAs
Richards, D.; Schneider, H.; Hendorfer, G.; Maier, M.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992The confining potential for carriers in planar doped GaAs and the effect of photoexcitation.
Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Conference Paper
1992Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in delta-doped GaAs-Si.
Richards, D.; Wagner, -; Ramsteiner, M.; Ekenberg, U.; Fasol, G.; Ploog, K.
Journal Article
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Journal Article
1992Raman spectroscopy assessment of laterally structured delta-doped GaAs-Si.
Hülsmann, A.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
1992Raman spectroscopy of delta-doped GaAs layers and wires.
Wagner, J.
Conference Paper
1991Effect of spatial localization of dopant atoms of the spacing of electron subbands in delta-doped GaAs-Si.
Richards, D.; Fasol, G.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1991Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
Ruiz, A.; Ploog, K.; Wagner, J.
Journal Article
1991Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1990Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Conference Paper
1990Electronic structure of single delta-doped GaAs layers studied by photoluminescence and raman spectroscopy.
Ploog, K.; Wagner, J.
Conference Paper
1990Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs
Ploog, K.; Fischer, A.; Wagner, J.
Journal Article
1989Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article