Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Generic origin of subgap states in transparent amorphous semiconductor oxides illustrated for the cases of In-Zn-O and In-Sn-O
Körner, W.; Urban, D.F.; Elsässer, C.
Journal Article
2014Density-functional theory study of stability and subgap states of crystalline and amorphous Zn-Sn-O
Körner, W.; Elsässer, C.
Journal Article
2003Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy
Albrecht, F.; Pasold, G.; Grillenberger, J.; Achtziger, N.; Witthuhn, W.; Risse, M.; Vianden, R.; Dietrich, M.
Journal Article
2003Metastable behavior of anion-site donors in InAs
Risse, M.; Vianden, R.
Journal Article
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Journal Article
1993Low-temperature MBE of AlGaInAs lattice-matched to InP
Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.
Journal Article
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Journal Article
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Journal Article
1989Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions
Bach, H.-G.; Beister, G.
Conference Paper