Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2007Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
Wellmann, P.J.; Karl, U.; Kleber, S.; Schmitt, H.
Journal Article
2000Effects of hydrogen ion bombardment and boron doping on (001) polycrystalline diamond films
Xia, Y.; Sekiguchi, T.; Zhang, W.; Jiang, X.; Wu, W.; Yao, T.
Journal Article
2000Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage
Xia, Y.; Sekiguchi, T.; Zhang, W.; Jiang, X.; Ju, J.; Wang, L.; Yao, T.
Journal Article
1996Luminescence properties of SrS:Ce3+, Cl thin films
Hüttl, B.; Velthaus, K.O.; Troppenz, U.; Mauch, R.H.
Conference Paper, Journal Article
1992Anisotropic electrical conduction in GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As strained heterostructures beyond the critical layer thickness.
Hiesinger, P.; Schweizer, T.; Rothemund, W.; Ganser, P.; Jantz, W.; Köhler, K.
Journal Article
1992Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Schweizer, T.; Köhler, K.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1990Cathodoluminescence study of erbium in La1-xErxF3 epitaxial layers on Si-111-.
Müller, H.D.; Schneider, J.; Lüth, H.; Strümpler, R.
Journal Article
1990Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy.
As, D.J.; Rothemund, W.; Hingerl, K.; Sitter, H.
Journal Article