Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Influence of the acceptor on electrical perfomance and charge carrier transport in bulk heterojunction solar cells with HXS-1
Ahme, H.; Lee, M.; Im, C.; Würfel, U.
Journal Article
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Journal Article
1996Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum-well lasers
Esquivias, I.; Romero, B.; Weisser, S.; Czotscher, K.; Ralston, J.D.; Larkins, E.C.; Arias, J.; Schönfelder, A.; Mikulla, M.; Fleissner, J.; Rosenzweig, J.
Conference Paper
1996Study of carrier transport in SrS:Ce,Mn,Cl electroluminescent devices by optical method
Hüttl, B.; Kratzert, P.; Lite, K.; Reinsperger, B.; Plant, T.K.; Mauch, R.H.
Conference Paper
1994High speed characterization of p-i-n- photodetectors by nonlinear photocurrent spectroscopy
Bender, G.; Schneider, H.
Journal Article
1994Impedance, modulation response, and equivalent circuit of ultra-high-speed In0.35Ga0.65As/MQW lasers with p-doping
Weisser, S.; Esquivias, I.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.
Journal Article
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Conference Paper
1991Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectors.
Moglestue, C.; Kuhl, J.; Klingenstein, M.; Lambsdorff, M.; Axmann, A.; Schneider, J.; Hülsmann, A.; Rosenzweig, J.
Journal Article
1991Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axmann, A.; Schneider, J.; Hülsmann, A.; Leier, H.; Forchel, A.
Journal Article