Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2001Thermal stability of semi-insulating InP epilayers: The roles of dicarbon and carbon-hydrogen centers
Newman, R.; Davidson, B.; Wagner, J.; Sangster, M.; Leigh, R.
Journal Article
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Journal Article
1998Di-carbon complexes in AlAs and GaAs
Latham, C.D.; Jones, R.; Wagner, J.; Davidson, B.R.; Newman, R.C.; Button, C.C.; Briddon, P.R.; Öberg, S.
Journal Article
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Journal Article
1996High power tapered InGaAs/GaAs laser diodes with carbon doped cladding layers grown by solid source molecular beam epitaxy
Mikulla, M.; Benz, W.; Chazan, P.; Daleiden, J.; Fleissner, J.; Kaufel, G.; Larkins, E.C.; Maier, M.; Ralston, J.D.; Rosenzweig, J.; Wetzel, A.
Conference Paper
199537 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with c-doped active regions
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
1995Determination of the bonding of carbon acceptors in InxGa1-xAs for x smallr than 0.1
Pritchard, R.E.; Newman, R.C.; Wagner, J.; Maier, M.; Mazuelas, A.; Lane, P.A.; Martin, T.; Whitehouse, C.R.; Ploog, K.
Journal Article
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Conference Paper
1995High carbon doping of Ga1-xInxAs /x about 0.01/ grown by molecular beam epitaxy
Mazuelas, A.; Maier, M.; Wagner, J.; Fischer, A.; Trampert, A.; Ploog, K.
Journal Article
1995Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1995Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.
Journal Article
1994AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1994AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties
Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J.
Conference Paper
1993AlGaInP/GaInAs/GaAs MODFET devices - candidates for optoelectronic integrated circuits
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Journal Article
1993High speed selfaligned GaInP/GaAs HBBTs.
Leier, H.; Marten, A.; Pletschen, W.; Tasker, P.J.; Bachem, K.H.
Journal Article
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992High speed non-selfaligned GaInP/GaAs-TEBT.
Zwicknagl, P.; Schaper, U.; Schleicher, L.; Siweris, H.; Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar transistors
Bachem, K.H.; Pletschen, W.; Winkler, K.; Lauterbach, T.; Maier, M.
Conference Paper
1992A novel GaAs bipolar transistor structure with GaInP-hole injection blocking barrier.
Pletschen, W.; Bachem, K.H.; Lauterbach, T.
Conference Paper
1992Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers.
Bachem, K.H.; Ashwin, M.; Newman, R.C.; Woodhouse, K.; Nicklin, R.; Bradley, R.R.; Lauterbach, T.; Maier, M.; Wagner, J.
Journal Article
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Journal Article
1991Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine
Neumann, G.; Bachem, K.H.; Lauterbach, T.; Maier, M.
Conference Paper