Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M.; Dammann, M.; Baeumler, M.; Polyakov, V.M.; Reiner, R.; Waltereit, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2002High-field step-stress and long term stability of PHEMTs with different gate and recess lengths
Cova, P.; Menozzi, R.; Dammann, M.; Feltgen, T.; Jantz, W.
Journal Article
1997High performance double recessed Al(0.2)Ga(0.8)As/In(0.25)Ga(0.75)As PHEMTs for microwave power applications
Marsetz, W.; Hülsmann, A.; Kleindienst, T.; Fischer, S.; Demmler, M.; Bronner, W.; Fink, T.; Köhler, K.; Schlechtweg, M.
Conference Paper
1994Fabrication of high breakdown pseudomorphic doped field effect transistors using double dry etched gate recess technology in combination with e-beam T-gate lithography
Hülsmann, A.; Bronner, W.; Köhler, K.; Braunstein, J.; Tasker, P.J.
Journal Article