Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Rapid vapor-phase direct doping for high-efficiency solar cells
Kühnhold-Pospischil, Saskia; Steinhauser, Bernd; Richter, Armin; Gust, Elke; Janz, Stefan
Journal Article
2017A laser induced forward transfer process for selective boron emitters
Fernandez-Robledo, S.; Nekarda, J.; Büchler, A.
Journal Article
2017Rapid vapor-phase direct diffused emitter for solar cell applications
Kühnhold-Pospischil, S.; Gust, E.; Amiri, D.; Richter, A.; Steinhauser, B.; Drießen, M.; Michl, B.; Greulich, J.; Benick, J.; Lindekugel, S.; Janz, S.
Conference Paper
2016Extending the limits of screen-printed metallization of phosphorus- and boron-doped surfaces
Werner, S.; Lohmüller, E.; Wolf, A.; Clement, F.
Journal Article, Conference Paper
2015Optimization of BBr3 diffusion processes for n-type silicon solar cells
Werner, S.; Lohmüller, E.; Belledin, U.; Vlooswijk, A.H.G.; Naber, R.C.G.; Mack, S.; Wolf, A.
Conference Paper
2014Boron diffusion in nanocrystalline 3C-SiC
Schnabel, M.; Weiss, C.; Canino, M.; Rachow, T.; Löper, P.; Summonte, C.; Mirabella, S.; Janz, S.; Wilshaw, P.R.
Journal Article
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Journal Article, Conference Paper
2014Simulation of the boron build-up formation during melting laser thermal annealing
Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.
Journal Article, Conference Paper
2013Anomalous impurity segregation and local bonding fluctuation in l-Si
Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.
Journal Article
2013A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter
Journal Article
2013Laser doping from borosilicate glass for metallization of boron emitters
Fernandez-Robledo, S.; Jäger, U.; Lohmüller, E.; Nekarda, J.; Preu, R.
Conference Paper
2013Laser-based foil metallization for industrial PERC solar cells
Nekarda, J.; Graf, M.; Rodofili, A.; Preu, R.; Böhme, R.; Sontag, D.
Conference Paper
2013PECVD Al2O3/a-Si:B as a dopant source and surface passivation
Seiffe, J.; Gahoi, A.; Hofmann, M.; Rentsch, J.; Preu, R.
Journal Article
2012Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
Cristiano, F.; Essa, Z.; Qiu, Y.; Spiegel, Y.; Torregrosa, F.; Duchaine, J.; Boulenc, P.; Tavernier, C.; Cojocaru, O.; Blavette, D.; Mangelinck, D.; Fazzini, P.F.; Quillec, M.; Bazizi, M.; Hackenberg, M.; Boninelli, S.
Conference Paper
2012Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.
Conference Paper
2012Simulation of BF3 plasma immersion ion implantation into silicon
Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.
Conference Paper
2010Investigation of boron redistribution during silicidation in TiSi2 using atom probe tomography
Shariq, A.; Wedderhoff, K.; Kleint, C.; Teichert, S.
Abstract
2008On a computationally efficient approach to boron-interstitial clustering
Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Journal Article, Conference Paper
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Conference Paper
2007On a computationally efficient approach to Boron-interstitial clustering
Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Conference Paper
2007Stress development and impurity segregation during oxidation of the Si(100) surface
Cole, D.J.; Payne, M.C.; Colombi Ciacchi, L.
Journal Article
2006Boron containing combination tool coatings - characterization and application tests
Keunecke, M.; Bewilogua, K.; Wiemann, E.; Weigel, K.; Wittorf, R.; Thomsen, H.
Journal Article
2006Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Journal Article
2006Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
Takashiri, M.; Borca-Tasciuc, T.; Jacquot, A.; Miyazaki, K.; Cheng, G.
Journal Article
2005Advanced activation of ultra-shallow junctions using flash-assisted RTP
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.
Conference Paper, Journal Article
2004Boron based and other combination tool coatings - characterization and application tests
Keunecke, M.; Wiemann, E.; Weber, M.; Thomsen, H.; Wittorf, R.
Conference Paper
2004Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.
Conference Paper
2004On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Conference Paper
2002Ultrahigh boron doping of nanocrystalline diamond films and their electron field emission characteristics
Jiang, X.; Au, F.C.K.; Lee, S.-T.
Journal Article
1998Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond
Rohrer, E.; Nebel, C.E.; Stutzmann, M.; Floter, A.; Zachai, R.; Jiang, X.; Klages, C.-P.
Journal Article
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1995Optical and electrical characterization of boron-doped diamond films
Locher, R.; Wagner, J.; Fuchs, F.; Maier, M.; Gonon, P.; Koidl, P.
Journal Article
1994Analytical description of high energy implantation profiles of bordon and phosphorus into crystalline silicon
Gong, L.; Bogen, S.; Frey, L.; Jung, W.; Ryssel, H.
Journal Article
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1993Electron probe microanalysis of submicron coatings containing ultralight elements
Willich, P.; Bethke, R.
Conference Paper
1993High energy implantation of high10 B and high11 B into -100- silicon in channel and in random
Gong, L.; Frey, L.; Bogen, S.; Ryssel, H.
Journal Article
1993Photon assisted implantation -PAI-
Biro, L.P.; Gyulai, J.; Ryssel, H.; Frey, L.; Kormany, T.; Tuan, N.M.
Journal Article
1992Burning behaviour of gas generators with high Boron content.
Eisenreich, N.; Krause, H.H.; Menke, K.; Pfeil, A.
Journal Article
1991Combustion of boron-based slurries in a ramburner
Liehmann, W.
Conference Paper
1991Thickness inhomogeneity during silicon X-ray mask membrane fabrication: generation and prevention
Löchel, B.; Macioßek, A.; Huber, H.-L.; König, M.
Conference Paper