Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1985An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Su, L.M.; Grote, N.; Kaumanns, R.; Katzschner, W.; Bach, H.G.
Journal Article
1985A novel npn InGaAs bipolar transistor with a wide gap cadmium oxide (CdO) emitter
Su, L.M.; Grote, N.; Bach, H.G.; Doldissen, W.; Rosenzweig, M.
Conference Paper
1985NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.
Journal Article
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Journal Article
1984Diffused planar InP bipolar transistor with a cadmium oxide film emitter
Su, L.M.; Grote, N.; Schmitt, F.
Journal Article
1984A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R.
Journal Article
19812.24 Gbit/s optical transmission system at 0.85 mu m wavelength
Albrecht, W.; Baack, C.; Elze, G.; Enning, B.; Heydt, G.; Peters, K.; Wolf, G.; Wenke, G.
Journal Article
1971The small-signal forward characteristics of saturated semiconductors
Noll, P.
Journal Article