Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept
Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.
Conference Paper
2006Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications
Driad, R.; Lösch, R.; Schneider, K.; Makon, R.E.; Ludwig, M.; Weimann, G.
Journal Article
2005InP DHBT-based IC technology for high-speed data communications
Driad, R.; Schneider, K.; Makon, R.E.; Lang, M.; Nowotny, U.; Aidam, R.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Weimann, G.
Conference Paper
2004Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
Aidam, R.; Lösch, R.; Walther, M.; Driad, R.; Kallenbach, S.
Conference Paper
2003High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s
Quay, R.; Schlechtweg, M.; Leuther, A.; Lang, M.; Nowotny, U.; Kappeler, O.; Benz, W.; Ludwig, M.; Leich, M.; Driad, R.; Bronner, W.; Weimann, G.
Conference Paper
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992Integration of vertical/quasivertical DMOS, CMOS and bipolar transistors in a 50V SIMOX process
Berger, M.; Mach, W.; Mütterlein, B.; Raab, M.; Richter, F.; Vogt, F.P.; Vogt, H.; Weyers, J.
Conference Paper
1989Speed comparison of digital BiCMOS and CMOS circuits
Hosticka, B.J.; Rothermel, A.
Journal Article
1986Characteristics of double-heterojunction InGaAsP/InP bipolar transistors
Grote, N.; Su, L.M.; Bach, H.-G.
Conference Paper
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Journal Article