Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J.
Journal Article
2009Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers - a challenge for MBE growth
Manz, C.; Yang, Q.K.; Rattunde, M.; Schulz, N.; Rösener, B.; Kirste, L.; Wagner, J.; Köhler, K.
Journal Article
2007Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K.
Conference Paper
2005Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
Walther, M.; Schmitz, J.; Rehm, R.; Kopta, S.; Fuchs, F.; Fleißner, J.; Cabanski, W.; Ziegler, J.
Conference Paper
2005High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D.
Journal Article
2005MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper
2005Third generation focal plane array IR detection modules and applications
Cabanski, W.; Münzberg, M.; Rode, W.; Wendler, J.; Ziegler, J.; Fleißner, J.; Fuchs, F.; Rehm, R.; Schmitz, J.; Schneider, H.; Walther, M.
Conference Paper
2004State of the art 3rd gen IR detection modules in Germany
Cabanski, W.; Rode, W.; Wendler, J.; Ziegler, J.; Fleißner, J.; Fuchs, F.; Rehm, R.; Schmitz, J.; Schneider, H.; Walther, M.
Conference Paper
2001Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G.
Journal Article
1994Improved structural and transport properties of MBE-grown InAs/AlSb QW's with residual As incorporation eliminated via valved cracker
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Hiesinger, P.; Koidl, P.; Ralston, J.D.
Conference Paper