Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Computational analysis of composition-structure-property-relationships in NZP-type materials for Li-ion batteries
Mutter, D; Uraban, F.; Elsässer, C.
Journal Article
2019With PECVD deposited poly-SiGe and poly-Ge forming contacts between MEMS and electronics
Wang, Qiang; Vogt, Holger
Journal Article
2016Effects of sublattice symmetry and frustration on ionic transport in garnet solid electrolytes
Kozinsky, B.; Akhade, S.A.; Hirel, P.; Hashibon, A.; Elsässer, C.; Mehta, P.; Logeat, A.; Eisele, U.
Journal Article
2013Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
Journal Article
2007Piezoresistive effect in amorphous carbon thin films
Tibrewala, A.; Peiner, E.; Bandorf, R.; Biehl, S.; Lüthje, H.
Journal Article
2003Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W.
Journal Article
2002Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
Agert, C.; Gladkov, P.S.; Bett, A.W.
Journal Article
2000Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Marsetz, W.; Schmidt, K.; Weimann, G.
Journal Article
2000Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
Kreissl, J.; Moehrle, M.; Sigmund, A.; Bochnia, R.; Harde, P.; Ulrici, W.
Conference Paper
1994Motion of oxygen in vanadium and niobium studied by nuclear magnetic resonance
Michel, B.; Kanert, O.; Günther, B.
Journal Article
1994Thermal stability of the dipole orientation in nonlinear optical guest-host, side-chain and cross-linked polymer electrets
Bauer, S.; Ren, W.; Bauer-Gogonea, S.; Gerhard-Multhaupt, R.; Liang, J.; Zyss, J.; Ahlheim, M.; Stahelin, M.; Zysset, B.
Conference Paper
1991Emitter-base electron transport in GaInP/GaAs heterojunction bipolar transistors and tunnel emitter bipolar transistors.
Bachem, K.H.; Pletschen, W.; Lauterbach, T.; Shur, M.
Conference Paper
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Journal Article
1987Formation of p+(p-)n junctions in InP and their dependence on substrate concentration, time and temperature
Schmitt, F.; Mahnkopfe, M.
Conference Paper, Journal Article
1987Temperature limitation of hydrogen turnover and methanogenesis in anoxic paddy soil
Babbel, M.; Conrad, R.; Schütz, H.
Journal Article