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| 2009 | Performance modification of SiC MEMS
Niebelschütz, F.; Brueckner, K.; Cimalla, V.; Hein, M.A.; Pezoldt, J. | Conference Paper |
| 2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Conference Paper |
| 2002 | Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J. | Journal Article |
| 2001 | Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J. | Journal Article |
| 1999 | Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M. | Journal Article |
| 1995 | Interdiffusion von GaAs/AlGaAs- und pseudomorphen InGaAs/GaAs-Halbleiterheterostrukturen für optoelektronische Anwendungen
Bürkner, S. | Dissertation |
| 1995 | Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J. | Journal Article |
| 1994 | Band structure engineering in strained semiconductor lasers
O'Reilly, E.P.; Adams, A.R. | Journal Article |
| 1994 | Effects of strain and GaInP2 superlatice ordering on laser polarization.
Forstmann, G.G.; Barth, F.; Schweizer, H.; Moser, M.; Geng, C. | Journal Article |
| 1990 | Electron paramagnetic resonance of the shallow Si donor in indirect GaAs/AlxGa1-xAs heterostructures.
Wilkening, W.; Kaufmann, U. | Conference Paper |