Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009Performance modification of SiC MEMS
Niebelschütz, F.; Brueckner, K.; Cimalla, V.; Hein, M.A.; Pezoldt, J.
Conference Paper, Journal Article
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Conference Paper
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Journal Article
2001Improved performance of 2-mu m GaInAs strained quantum-well lasers on InP by increasing carrier confinement
Serries, D.; Peter, M.; Kiefer, R.; Winkler, K.; Wagner, J.
Journal Article
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1995Interdiffusion von GaAs/AlGaAs- und pseudomorphen InGaAs/GaAs-Halbleiterheterostrukturen für optoelektronische Anwendungen
Bürkner, S.
Dissertation
1995Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion
Bürkner, S.; Ralston, J.D.; Weisser, S.; Sah, R.E.; Fleissner, J.; Larkins, E.C.; Rosenzweig, J.
Journal Article
1994Band structure engineering in strained semiconductor lasers
O'Reilly, E.P.; Adams, A.R.
Journal Article
1994Effects of strain and GaInP2 superlatice ordering on laser polarization.
Forstmann, G.G.; Barth, F.; Schweizer, H.; Moser, M.; Geng, C.
Journal Article
1990Electron paramagnetic resonance of the shallow Si donor in indirect GaAs/AlxGa1-xAs heterostructures.
Wilkening, W.; Kaufmann, U.
Conference Paper