Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
Thome, Fabian; Ambacher, Oliver
Conference Paper
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Conference Paper
2016An investigation of millimeter wave switches based on shunt transistors including SPDT switch MMICs up to 300 GHz
Thome, F.; Ohlrogge, M.; Leuther, A.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2016Ultra low noise V-band down-converters for MetOp-SG
Thonel d'Orgeix, Y. de; Farré, R.; Haddad, S.; Sanson, D.; Mouneyrac, D.; Goutoule, J.-M.; Decoopman, T.; Lemasson, A.; Tailhades, J.; Hammett, R.; Rösch, M.; Leuther, A.; Aja, B.; Alderman, B.; Powell, J.; Kangas, V.; D´Addio, S.; Périchaud, M.-G.; Piironen, P.
Conference Paper
2013An asymmetrical 60-90 GHz single-pole double throw switch MMIC
Dyskin, A.; Peleg, N.; Wagner, S.; Ritter, D.; Kallfass, I.
Conference Paper
2012A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Journal Article
2012Ultra wideband cascade low noise amplifier implemented in 100-nm GaAs metamorphic-HEMTS technology
Dyskin, A.; Ritter, D.; Kallfass, I.
Conference Paper