Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Journal Article
1996Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si
Däweritz, L.; Schützendübe, P.; Stahrenberg, K.; Maier, M.; Ploog, K.
Conference Paper
1994Influence of In on Si local vibrational modes in InxGa1-xAs -0 equal or smaller than x equal or smaller than 0.12-
Alvarez, A.L.; Calle, F.; Wagner, A.; Sacedon, A.; Maier, M.; Fernandez de Avila, S.; Calleja, E.; Munoz, E.; Lourenco, M.A.
Journal Article
1994Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs-001- vicinal surfaces during MBE growth.
Ramsteiner, M.; Wagner, J.; Jungk, G.; Behr, D.; Däweritz, L.; Hey, R.
Journal Article
1994Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Däweritz, L.; Hey, R.
Journal Article
1990Depth profiling of Si in AlGaAs/GaAs heterostructures with SIMS
Maier, M.
Conference Paper