Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Journal Article
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Journal Article
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper
1995Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D.
Journal Article
1994Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K.
Journal Article
1994Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Journal Article
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J.
Journal Article
1992Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V.
Journal Article
1991Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J.
Conference Paper
1991Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.
Journal Article
1991Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J.
Journal Article
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Journal Article
1991Resonance effects in Raman scattering from polycrystalline diamond films.
Koidl, P.; Wagner, J.; Wild, C.
Journal Article
1991Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1990Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J.
Journal Article
1990Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H.
Journal Article
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J.
Journal Article
1989Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1989Optical spectroscopy of impurity levels in GaAs
Wagner, J.
Journal Article
1989Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J.
Journal Article
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Journal Article
1988Composition dependence of longitudinal optical phonon modes in Cd(x)Hg(1-x)Te with 0.5 equal or smaller than x equal or smaller than 1
Lusson, A.; Wagner, J.
Journal Article
1988Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.
Wagner, J.
Journal Article
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Conference Paper
1988Raman scattering of amorphous carbon/semiconductor interface layers.
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1988Raman scattering of residual acceptors in GaAs and its application to optical topography
Windscheif, J.; Wagner, J.
Conference Paper
1988Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Journal Article
1988Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J.
Journal Article
1987Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Conference Paper
1987Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite?
Ramsteiner, M.; Newmann, R.C.; Wagner, J.
Journal Article
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Journal Article
1987Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.
Conference Paper
1987Ground-state splitting of the 78-meV double acceptor in GaAs
Ramsteiner, M.; Wagner, J.
Journal Article
1987Optical characterization of heavily doped silicon
Wagner, J.
Journal Article
1987Raman scattering from extremely thin hard amorphous carbon films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Journal Article
1987Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J.
Conference Paper
1987Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication
Jantz, W.; Wagner, J.; Frey, T.
Journal Article
1987Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Conference Paper
1987Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C.
Journal Article
1986Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J.
Journal Article
1985Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
Contreras, G.; Cardona, M.; Axmann, A.
Journal Article
1984Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M.
Conference Paper
1983Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G.
Journal Article
1983Raman studies of the P local mode vibration in P implanted, laser annealed Ge.
Axmann, A.; Contreras, G.; Compaan, A.
Journal Article