Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Verstärkung des Raman-Streueffektes in komplexen Gasgemischen
Sandfort, Vincenz
: Wöllenstein, Jürgen (Erstgutachter); Reindl, Leonhard M. (Zweitgutachter)
Dissertation
2016Neue Methoden der laserbasierten Gasanalytik
Lambrecht, Armin; Bolwien, Carsten; Herbst, Johannes; Kühnemann, Frank; Sandfort, Vincenz; Wolf, Sebastian
Journal Article
2005Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M.
Journal Article
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Conference Paper
2003Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2002Molekularstrahl-Epitaxie und Charakterisierung von Gruppe III-Arsenid/Nitridischen Halbleitern
Geppert, T.
Thesis
2002Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Journal Article
2001Thermal stability of semi-insulating InP epilayers: The roles of dicarbon and carbon-hydrogen centers
Newman, R.; Davidson, B.; Wagner, J.; Sangster, M.; Leigh, R.
Journal Article
2000GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectrosopic ellipsometry
Wagner, J.; Köhler, K.; Ganser, P.; Herres, N.
Journal Article
2000Raman and dielectric function spectra of strained GaAs(1-x)Sb(x) layers on InP
Serries, D.; Peter, M.; Herres, N.; Winkler, K.; Wagner, J.
Journal Article
2000Resonant Raman scattering from buried Al(x)Ga(1-x)N (x < = 0.17) layers in (Al,Ga,In)N heterostructures
Yoshikawa, M.; Wagner, J.; Obloh, H.; Kunzer, M.; Maier, M.
Journal Article
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1998Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In(0.53)Ga(0.47)As
Wagner, J.; Peter, M.; Winkler, K.; Bachem, K.H.
Journal Article
1998Optische Spektroskopie an Halbleitern mit großem Bandabstand
Behr, D.
Dissertation
1998Optische Untersuchungen von antimonidischen III/V-Verbindungshalbleitern
Serries, D.
Thesis
1997Di-Carbon defects in annealed highly carbon doped GaAs
Wagner, J.; Newman, R.C.; Davidson, B.R.; Westwater, S.P.; Bullough, T.J.; Joyce, T.B.; Latham, C.D.; Jones, R.; Öberg, S.
Journal Article
1997Epitaxial overgrowth of 13C diamond films on diamond substrates predamaged by ion implantation
Behr, D.; Locher, R.; Wagner, J.; Koidl, P.; Richter, V.; Kalish, R.
Journal Article
1996Broadening of interband resonances in thin AlAs barriers embedded in GaAs
Weimar, U.; Wagner, J.; Gaymann, A.; Köhler, K.
Journal Article
1996Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
Herres, N.; Fuchs, F.; Schmitz, J.; Pavlov, K.M.; Wagner, J.; Ralston, J.D.; Koidl, P.; Gadaleta, C.; Scamarcio, G.
Journal Article
1996Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films
Wörner, E.; Wagner, J.; Müller-Sebert, W.; Wild, C.; Koidl, P.
Journal Article
1996Intersubband Raman scattering in InAs/AlSb quantum wells
Wagner, J.; Schmitz, J.; Richards, D.; Ralston, J.D.; Koidl, P.
Journal Article
1996Isolated hydrogen molecules in GaAS
Vetterhöffer, J.; Wagner, J.; Weber, J.
Journal Article
1996Landau damped intersubband plasmons in InAs/AlSb quantum wells
Richards, D.; Wagner, J.; Schmitz, J.
Journal Article
1996Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures
Wagner, J.; Richards, D.
Book Article
1996Raman spectroscopy of doping sheets and heterointerfaces in III-V semiconductor structures
Wagner, J.; Schmitz, J.; Newman, R.C.; Roberts, C.
Journal Article
1996Resonant raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Schneider, J.; Amano, H.; Akasaki, I.
Journal Article
1995The dynamics of the H-CAs complex in GaAs studied by raman spectroscopy
Wagner, J.; Bachem, K.H.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.
Conference Paper
1995InAs/GaSb superlattices with different interfaces studied by resonant raman scattering ans ellipsometry
Behr, D.; Wagner, J.; Ralston, J.D.; Koidl, P.; Ramsteiner, M.; Schrottke, L.; Jungk, G.
Conference Paper
1995Pyro-C-Beschichtung von C-Fasern mit Laser CVD zur Grenzflächenoptimierung von CFC
Schönfeld, K.; Hopfe, V.; Jäckel, R.; Ekenhorst, B.
Conference Paper
1995Raman characterization of amorphous carbon films
Drescher, D.; Alers, P.; Scheibe, H.J.
Conference Paper
1995Raman scattering by folded longitudinal acoustic phonons in InAs/GaSb superlattices - Resonant enhancement an effect of interfacial bonding
Wagner, J.; Schmitz, J.; Herres, N.; Ralston, J.D.; Koidl, P.
Journal Article
1995Raman spectroscopic study of the H-CAs complex in epitaxial AlAs
Wagner, J.; Pritchard, R.E.; Davidson, B.R.; Newman, R.C.; Bullough, T.J.; Joyce, T.B.; Button, C.; Roberts, J.S.
Journal Article
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Journal Article
1995Wire-Like ordering of Si dopant atoms on GaAs-001- vincinal surgaces studied by raman scattering
Ramsteiner, M.; Däweritz, L.; Hey, R.; Jungk, G.; Wagner, J.
Conference Paper
1994Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.
Journal Article
1994Raman scattering investigation on the ordered incorporation of Si dopant atoms on GaAs-001- vicinal surfaces during MBE growth.
Ramsteiner, M.; Wagner, J.; Jungk, G.; Behr, D.; Däweritz, L.; Hey, R.
Journal Article
1994Raman spectroscopic study of heterointerfaces in GaSb and InSb on GaAs and in InAs/(AlGa)Sb quantum structures
Wagner, J.; Schmitz, J.
Journal Article
1994Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs-001- vicinal surfaces.
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Däweritz, L.; Hey, R.
Journal Article
1994Raman- und Mikro-Ramanspektroskopie an CVD-Diamant und Halbleiter-Heterostrukturen
Behr, D.
Thesis
1993Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements.
Koidl, P.; Uzan-Saguy, C.; Kalish, R.; Bruder, M.; Bachem, K.H.; Wagner, J.
Journal Article
1993Characterization of heterointerfaces and surfaces in InSb on GaAs and in InAs/AlSb quantum wells
Schmitz, J.; Alvarez, A.-L.; Koidl, P.; Ralston, J.D.; Wagner, J.
Journal Article
1993The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
Davidson, B.R.; Newman, R.C.; Robbie, D.A.; Sangster, M.J.L.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Optical investigation of delta-doped In0.1Ga0.9As-Si/GaAs strained quantum wells.
Richards, D.; Maier, M.; Köhler, K.; Wagner, J.
Journal Article
1993Photocurrent and Raman spectroscopy of Stark ladder superlattices with single monolayer AlAs barriers.
Schneider, H.; Ploog, K.; Fischer, A.; Fujiwara, K.; Wagner, J.
Journal Article
1993Raman spectroscopic and Hall effect analysis of the free electron concentration in GaAs with ultrahigh silicon doping.
Ramsteiner, M.; Hiesinger, P.; Köhler, K.; Rössler, U.; Wagner, J.
Journal Article
1993Raman spectroscopic study of interfaces in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.
Journal Article
1993Thermal diffusivity of diamond films synthesized from methane by ARC-discharge plasma-jet CVD
Boudina, A.; Fitzer, E.; Netzelmann, U.; Reiss, H.
Journal Article
1992The confining potential for carriers in planar doped GaAs and the effect of photoexcitation.
Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Conference Paper
1992Infrared raman study of the phonon linewidth and the nondiamond carbon phase in -110- and -100- textured polycrystalline diamond films
Müller-Sebert, W.; Koidl, P.; Wagner, J.; Wild, C.
Journal Article
1992Multiply resonant Raman scattering in Stark ladder superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Journal Article
1992Raman and ion channeling of damage in ion-implanted GaAs - dependence on ion dose and dose rate.
Desnica, U.V.; Haynes, T.E.; Holland, O.W.; Wagner, J.
Journal Article
1992Raman spectroscopy assessment of laterally structured delta-doped GaAs-Si.
Hülsmann, A.; Kaufel, G.; Köhler, K.; Wagner, J.
Journal Article
1992Raman spectroscopy of delta-doped GaAs layers and wires.
Wagner, J.
Conference Paper
1992Raman spectroscopy of dopant induced local vibrational modes in III-V semiconductors
Wagner, J.
Conference Paper
1992Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers
Bachem, K.H.; Mörsch, G.; Kamp, M.; Fischer, A.; Lauterbach, T.; Maier, M.; Ploog, K.; Wagner, J.
Journal Article
1992Raman-scattering in electroluminescent porous silicon
Kozlowski, F.; Steiner, P.; Lang, W.
Conference Paper
1992Spatially resolved Raman-measurements at electroluminescent porous n-silicon
Kozlowski, F.; Lang, W.
Journal Article
1991Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures.
Hiesinger, P.; Schmälzlin, J.; Fuchs, F.; Ralston, J.D.; Wagner, J.
Journal Article
1991Raman characterization of semiconducting materials and related structures.
Prevot, B.; Wagner, J.
Journal Article
1991Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs
Ko, K.H.; Lagowski, J.; Wagner, J.
Journal Article
1991Redistribution of epitaxial Si on -001- GaAs during overgrowth by GaAs.
Brandt, O.; Crook, G.E.; Ploog, K.; Maier, M.; Wagner, J.
Journal Article
1990Raman spectroscopy of dopant impurities in homogeneously and planar -delta- doped III-V semiconductors.
Wagner, J.
Journal Article
1989Incorporation of SI in delta-doped GaAs studied by local vibrational mode spectroscopy.
Stolz, W.; Hauser, M.; Ploog, K.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Journal Article
1986Residual acceptor assessment in as-grown bulk GaAs by raman and selective pair luminescence spectroscopy - A comparative study
Ramsteiner, M.; Wagner, J.
Journal Article