Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Journal Article
1997Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers
Passenberg, W.; Schlaak, W.
Journal Article
1996Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si
Däweritz, L.; Schützendübe, P.; Stahrenberg, K.; Maier, M.; Ploog, K.
Conference Paper
1994Nucleation and initial growth phase of diamond thin films on (100) silicon
Jiang, X.; Klages, C.-P.; Schiffmann, K.I.
Journal Article
1993Atomic-force-microscopic study of heteroepitaxial diamond nucleation on (100) silicon
Jiang, X.; Schiffmann, K.I.; Westphal, A.; Klages, C.-P.
Journal Article
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Journal Article