Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Molecular Beam Epitaxy of IV-VI Compounds
Lambrecht, Armin; Weng, B.; Shi, Z.
Book Article
2011Micro-electroluminescence of cyan InGaN-based multiple quantum well structures
Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U.T.; Hahn, B.
Journal Article
2011Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T.
Journal Article
2011Three-dimensional GaN for semipolar light emitters
Wunderer, T.; Feneberg, M.; Lipski, F.; Wang, J.; Leute, R.A.R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, S.; Bertram, F.; Christen, J.; Beirne, G.J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U.T.; Dräger, A.D.; Hangleiter, A.; Scholz, F.
Journal Article
2010Effizienz von GaInN-Leuchtdioden: Struktur aktiver Schichten unter dem Einfluss substratinduzierter Defekte
Maier, M.
: Ambacher, O.
Dissertation
2008Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Conference Paper
2004Resonant two-photon photoemission in quantum-well infrared photodetectors
Maier, T.; Schneider, H.; Walther, M.; Koidl, P.; Liu, H.C.
Journal Article
2003Dilute group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and realization of long wavelength (2.3 µm) GaInAsN QWs on InP
Serries, D.; Geppert, T.; Köhler, K.; Ganser, P.; Wagner, J.
Conference Paper
2003SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier, M.; Serries, D.; Geppert, T.; Köhler, K.; Güllich, H.; Herres, N.
Journal Article
2002Electron transport studies on In(0.30)Ga(0.70)As/GaAs-quantum-well infrared photodetectors using time-resolved photocurrent measurements
Steinkogler, S.; Schneider, H.; Rehm, R.; Walther, M.; Koidl, P.
Journal Article
2002Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
Malyarchuk, V.; Tomm, J.; Lienau, C.; Rinner, F.; Baeumler, M.
Journal Article
2001Filling-factor-dependent electron correlations observed in cyclotron resonance
Manger, M.; Batke, E.; Hey, R.; Friedland, K.J.; Köhler, K.; Ganser, P.
Journal Article
2001Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al(0.35)Ga(0.65)As multiple quantum wells
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Köhler, K.; Leroy, C.
Journal Article
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Conference Paper, Journal Article
2001Responsivity and Gain of InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPS: a Comparative Study
Rehm, R.; Schneider, H.; Schwarz, K.; Walther, M.; Koidl, P.; Weimann, G.
Conference Paper
2000Room temperature cw operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 µm wavelength range
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Conference Paper
1999Temperature and excitation-density-dependent photoluminescence in a GaAs/AlGaAs quantum well
Pannekamp, J.; Weber, S.; Limmer, W.; Sauer, R.
Journal Article