Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Herstellung und Charakterisierung von transparenten elektrisch leitfähigen TiO2:Nb-Dünnschichten durch Gleichstrom- und Puls-Magnetron-Sputtern
Junghähnel, Manuela
Dissertation
2004A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Journal Article
2001A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Cowern, N.E.B.
Journal Article
2000On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
Falster, R.; Voronkov, V.V.; Quast, F.
Journal Article
1999Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1998Recombination of point defects via extended defects and its influence
Stiebel, D.; Pichler, P.
Conference Paper
1998A reinterpretation of platinum-diffusion experiments
Pichler, P.
Conference Paper
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Journal Article
1997Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Journal Article
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Journal Article
1995Optisch detektierte Elektronenspinresonanz an Defekten in aktuellen Verbindungshalbleitern
Kunzer, M.
Dissertation
1994Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Conference Paper
1994MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Conference Paper
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1989The influence of point defect concentration on the diffusion of gold in silicon
Zimmermann, H.; Pichler, P.
Conference Paper
1986Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J.
Book
1986New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Journal Article
1986New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Book Article
1986Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Conference Paper
1982Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U.
Journal Article
1982The role of point defects in GaAs.
Schneider, J.
Conference Paper