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| 2012 | Herstellung und Charakterisierung von transparenten elektrisch leitfähigen TiO2:Nb-Dünnschichten durch Gleichstrom- und Puls-Magnetron-Sputtern
Junghähnel, Manuela | Dissertation |
| 2004 | A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A. | Journal Article |
| 2001 | A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Cowern, N.E.B. | Journal Article |
| 2000 | On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
Falster, R.; Voronkov, V.V.; Quast, F. | Journal Article |
| 1999 | Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H. | Conference Paper |
| 1998 | Recombination of point defects via extended defects and its influence
Stiebel, D.; Pichler, P. | Conference Paper |
| 1998 | A reinterpretation of platinum-diffusion experiments
Pichler, P. | Conference Paper |
| 1997 | Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R. | Journal Article |
| 1997 | Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M. | Journal Article |
| 1995 | Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Journal Article |
| 1995 | Optisch detektierte Elektronenspinresonanz an Defekten in aktuellen Verbindungshalbleitern
Kunzer, M. | Dissertation |
| 1994 | Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R. | Conference Paper |
| 1994 | MBE growth of GaAs-based pseudomorphic lasers - key growth trade-offs between the InGaAs MQWs and the AlGaAs cladding.
Larkins, E.C.; Rothemund, W.; Wagner, J.; Baeumler, M.; Bürkner, S.; Benz, W.; Weisser, S.; Schönfelder, A.; Flemig, G.; Brenn, R.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D. | Conference Paper |
| 1994 | On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R. | Journal Article |
| 1992 | Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R. | Journal Article |
| 1989 | The influence of point defect concentration on the diffusion of gold in silicon
Zimmermann, H.; Pichler, P. | Conference Paper |
| 1986 | Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J. | Book |
| 1986 | New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J. | Journal Article |
| 1986 | New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J. | Book Article |
| 1986 | Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J. | Conference Paper |
| 1982 | Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U. | Journal Article |
| 1982 | The role of point defects in GaAs.
Schneider, J. | Conference Paper |