Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Correlation of defect luminescence and recombination in multicrystalline silicon
Wyller, Guro Marie; Schindler, Florian; Kwapil, Wolfram; Schön, Jonas; Olsen, Espen; Haug, Halvard; Riepe, Stephan; Schubert, Martin C.
Journal Article
2018Challenges for the Quantification of Metal Induced Recombination Losses
Herrmann, D.; Lohmüller, S.; Höffler, H.; Fell, A.; Brand, A.A.; Wolf, A.
Conference Paper
2018Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.
Conference Paper
2018Photoluminescence Imaging at Uniform Excess Carrier Density Using Adaptive Nonuniform Excitation
Zhu, Y.; Heinz, F.D.; Juhl, M.; Schubert, M.C.; Trupke, T.; Hameiri, Z.
Journal Article
2018The principle of adaptive excitation for photoluminescence imaging of silicon: Theory
Heinz, Friedemann D.; Zhu, Yan; Hameri, Ziv; Juhl, Mattias; Trupke, Thorsten; Schubert, Martin C.
Journal Article
2017Influence of triangular defects on the electrical characteristics of 4H-SiC devices
Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.
Poster
2017Optical stressing of 4H-SiC material and devices
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen
Poster
2016Exploiting the potential of OLED-based photo-organic sensors for biotechnological applications
Krujatz, F.; Hild, O.; Fehse, K.; Jahnel, M.; Werner, A.; Bley, T.
Journal Article
2016Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence
Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Conference Paper
2016Inline quality rating of multi-crystalline wafers based on photoluminescence images
Demant, M.; Rein, S.; Haunschild, J.; Strauch, T.; Höffler, H.; Broisch, J.; Wasmer, S.; Sunder, K.; Anspach, O.; Brox, T.
Journal Article, Conference Paper
2016Microcracks in silicon wafers I: Inline detection and implications of crack morphology on wafer strength
Demant, M.; Welschehold, T.; Oswald, M.; Bartsch, S.; Brox, T.; Schoenfelder, S.; Rein, S.
Journal Article
2016Microcracks in silicon wafers II: Implications on solar cell characteristics, statistics and physical origin
Demant, M.; Welschehold, T.; Kluska, S.; Rein, S.
Journal Article
2015Absorption and emission of silicon nanocrystals embedded in SiC: Eliminating Fabry-Pérot interference
Schnabel, M.; Summonte, C.; Dyakov, S.; Lopez-Conesa, L.; Löper, P.; Janz, S.; Wilshaw, P.R.; Canino, M.
Journal Article
2015Analysing the effect of crystal size and structure in highly efficient CH3NH3Pbl3 perovskite solar cells by spatially resolved photo- and electroluminescence imaging
Mastroianni, S.; Heinz, F.D.; Im, J.-H.; Veurman, W.; Padilla, M.; Schubert, M.C.; Würfel, U.; Grätzel, M.; Park, N.-G.; Hinsch, A.
Journal Article
2015A combined transient and steady state approach for robust lifetime spectroscopy with micrometer resolution
Heinz, F.D.; Mundt, L.E.; Warta, W.; Schubert, M.C.
Journal Article
2015Defect Luminescence Scanner (DLS): Scientific and industrial-scale defect analysis
Oppel, Steffen; Schneider, Adrian; Schütz, Michael; Kaminzky, Daniel; Kallinger, Birgit; Weber, Jonas; Krieger, Michael
Presentation
2015Grain-to-grain contrasts in photoluminescence images of silicon wafers
Höffler, H.; Haunschild, J.; Rein, S.
Journal Article, Conference Paper
2015Imaging defect luminescence measurements of 4H-SiC by UV-PL
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Presentation
2015Imaging defect luminescence of 4H-SiC by UV-photoluminescence
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael
Presentation
2015Influence of growth temperature on the defect density for 4H-SiC homoepitaxy
Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen
Poster
2015Microscopic charge carrier lifetime in silicon from a transient approach
Heinz, F.D.; Kasemann, M.; Warta, W.; Schubert, M.C.
Journal Article
2015Photoluminescence-based current-voltage characterisation of individual subcells in multi-junction devices
Alsonso-Álvarez, D.; Lackner, D.; Philipps, S.P.; Bett, A.W.; Ekins-Daukes, N.J.
Conference Paper
2015Synthesis of novel nanodiamonds - gold core shell nanoparticles
Minati, L.; Cheng, C.L.; Lin, Y.C; Hees, J.; Lewes-Malandrakis, G.; Nebel, C.E.; Benetti, F.; Migliaresi, C.; Speranza, G.
Journal Article
2014Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
Hiller, D.; Zelenina, A.; Gutsch, S.; Dyakov, S.A.; Lopez-Conesa, L.; Lopez-Vidrier, J.; Estrade, S.; Peiro, F.; Garrido, B.; Valenta, J.; Korinek, M.; Trojanek, F.; Maly, P.; Schnabel, M.; Weiss, C.; Janz, S.; Zacharias, M.
Journal Article
2014Comparison of carrier lifetime measurements and mapping in 4H SiC using time resolved photoluminescence and μ-PCD
Kallinger, Birgit; Rommel, Mathias; Lilja, Louise; Hassan, Jawad ul; Booker, Ian; Janzen, Erik; Bergman, Peder
Conference Paper
2014Introduction to in-situ produced perovskite solar cells
Hinsch, A.; Mastroianni, S.; Brandt, H.; Heinz, F.; Schubert, M.C.; Veurman, W.
Conference Paper
2014New Defect Luminescence Scanner for Inline Control of Material Quality
Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen
Poster
2014Preparation and characterization of a transparent, photoluminescent MgAl2O4:Eu2+ ceramic
Wätzig, Katja; Kinski, Isabel
Journal Article
2013Accurate determination of minority carrier mobility in silicon from quasi-steady-state photoluminescence
Giesecke, J.; Schindler, F.; Bühler, M.; Schubert, M.; Warta, W.
Journal Article
2013Comparison of carrier lifetime measurements and mapping using time resolved photoluminescence and µ-PCD
Kallinger, Birgit; Rommel, Mathias; Lilja, L.; Hassan, J.; Booker, Ian; Janzen, Erik; Bergman, J.P.
Poster
2013Determination of actual carrier lifetime from differential measurements
Giesecke, J.A.; Glunz, S.W.; Warta, W.
Journal Article, Conference Paper
2013Determination of bulk lifetime and surface recombination velocity of silicon ingots from dynamic photoluminescence
Giesecke, J.A.; Sinton, R.A.; Schubert, M.C.; Riepe, S.; Warta, W.
Journal Article
2013Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
Korinek, M.; Schnabel, M.; Canino, M.; Kozak, M.; Trojanek, F.; Salava, J.; Löper, P.; Janz, S.; Summonte, C.; Maly, P.
Journal Article
2013Interstitial chromium in silicon on the micron scale
Heinz, F.D.; Schindler, F.; Warta, W.; Schubert, M.C.
Journal Article, Conference Paper
2013Solar cell performance prediction using advanced analysis methods on optical images of as-cut wafers
Turek, M.; Lausch, D.
Journal Article, Conference Paper
2013Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix
Zelenina, A.; Dyakov, S.A.; Hiller, D.; Gutsch, S.; Trouillet, V.; Bruns, M.; Mirabella, S.; Löper, P.; López-Conesa, L.; López-Vidrier, J.; Estrade, S.; Peiro, F.; Garrido, B.; Bläsing, J.; Krost, A.; Zhigunov, D.M.; Zacharias, M.
Journal Article
2013Tuning of the optical properties of In-rich In(x)Ga(1-x)N (x=0.82-0.49) alloys by light-ion irradiation at low energy
Luca, M. de; Pettinari, G.; Polimeni, A.; Capizzi, M.; Ciatto, G.; Amidani, L.; Fonda, E.; Boscherini, F.; Filippone, F.; Bonapasta, A.A.; Knübel, A.; Cimalla, V.; Ambacher, O.; Giubertoni, D.; Bersani, M.
Conference Paper
2012Effect of In incorporation into the quantum well active region on the efficiency of AlGaN-based ultraviolet light-emitting diodes
Passow, T.; Gutt, R.; Kunzer, M.; Kirste, L.; Pletschen, W.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2012Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
Danhof, J.; Schwarz, S.U.; Meyer, T.; Vierheilig, C.; Peter, M.
Journal Article
2012Optimizing micro raman and PL spectroscopy for solar cell technological assessment
Heinz, F.D.; Warta, W.; Schubert, M.C.
Journal Article, Conference Paper
2011High quality AlGaN epilayers grown on sapphire using SiNx interlayers
Forghani, K.; Klein, M.; Lipski, F.; Schwaiger, S.; Hertkorn, J.; Leute, R.A.R.; Scholz, F.; Feneberg, M.; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Gutt, R.; Passow, T.
Conference Paper, Journal Article
2011Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
Schade, L.; Schwarz, U.T.; Wernicke, H.; Weyers, M.; Kneissl, M.
Journal Article
2011Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers
Kunzer, M.; Gutt, R.; Kirste, L.; Passow, T.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2011Oriented phosphorescent emitters boost OLED efficiency
Flämmich, M.; Frischeisen, J.; Setz, D.S.; Michaelis, D.; Krummacher, B.C.; Schmidt, T.D.; Brütting, W.; Danz, N.
Journal Article
2011Real-time near-field evidence of optical blinking in the photoluminescence of InGaN by scanning near-field optical microscope
Oikawa, K.; Feldmeier, C.; Schwarz, U.T.; Kawakami, Y.; Micheletto, R.
Journal Article
2011Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells
Danhof, J.; Vierheilig, C.; Schwarz, U.T.; Meyer, T.; Peter, M.; Hahn, B.
Journal Article
2010Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes
Gutt, R.; Kirste, L.; Passow, T.; Kunzer, M.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2009Carrier mass measurements in degenerate indium nitride
Pettinari, G.; Polimeni, A.; Capizzi, M.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Lebedev, V.; Cimalla, V.; Ambacher, O.
Journal Article
2009Crystallization in heat-treated fluorochlorozirconate glasses
Johnson, J.A.; Weber, J.K.R; Kolesnikov, A.I.; Schweizer, S.
Journal Article
2009Optical properties of magnetron sputtered thin dielectric films containing terbium(III) for spectral conversion in thin film solar cells
Baumgartner, K.; Angelov, O.; Sendova-Vassileva, M.; Holländer, B.; Ahrens, B.; Schweizer, S.; Dimova-Malinovska, D.; Carius, R.
Conference Paper
2008Experimental evidence of different hydrogen donors in n-type InN
Pettinari, G.; Masia, F.; Capizzi, M.; Polimeni, A.; Losurdo, M.; Bruno, G.; Kim, T.H.; Choi, S.; Brown, A.; Lebedev, V.; Cimalla, V.; Ambacher, O.
Journal Article
2008Growth of thick films CdTe from the vapor phase
Sorgenfrei, R.; Greiffenberg, D.; Bachem, K.H.; Kirste, L.; Zwerger, A.; Fiederle, M.
Journal Article
2008Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures
Kunzer, M.; Leancu, C.-C.; Maier, M.; Köhler, K.; Kaufmann, U.; Wagner, J.
Journal Article
2007µ-probe photoluminescence study of mid-IR quantum cascade lasers based on antimonide ternary and quaternary barriers
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J.
Journal Article
2007Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
Vitiello, M.S.; Scamarcio, G.; Spagnolo, V.; Yang, Q.K.; Manz, C.; Wagner, J.; Revin, D.G.; Cockburn, J.
Conference Paper
2007Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B.
Conference Paper
2005Optically pumped mid infrared emitters built using surface structured PbSe epitaxial layers
Nurnus, J.; Vetter, U.; König, J.; Glatthaar, R.; Lambrecht, A.; Weik, F.; Tomm, J.W.
Conference Paper
2005Photoluminescence study of In-situ rare earth doped PVT-grown SiC single crystals
Schmitt, H.; Müller, R.; Maier, M.; Winnacker, A.; Wellmann, P.
Conference Paper, Journal Article
2002193 nm laser induced fluorescence in fluoride thin films
Heber, J.; Mühlig, C.; Triebel, W.; Danz, N.; Thielsch, R.; Kaiser, N.
Journal Article
2002193 nm laser induced luminescence in oxide thin films
Heber, J.; Mühlig, C.; Triebel, W.; Danz, N.; Thielsch, R.; Kaiser, N.
Journal Article
2001Changes of MQW photoluminescence under alpha particle irradiation
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Granja, C.; Pospisil, S.; Köhler, K.
Journal Article
2001Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al(0.35)Ga(0.65)As multiple quantum wells
Kundrotas, J.; Dargys, A.; Valusis, G.; Asmontas, S.; Köhler, K.; Leroy, C.
Journal Article
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Conference Paper, Journal Article
2000MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T.
Conference Paper
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Conference Paper, Journal Article
1999Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U.
Journal Article
1999High resolution EL2 and resistivity topography of Si GaAs wafers
Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.
Conference Paper
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Conference Paper, Journal Article
1999Temperature and excitation-density-dependent photoluminescence in a GaAs/AlGaAs quantum well
Pannekamp, J.; Weber, S.; Limmer, W.; Sauer, R.
Journal Article
1998Direct observation of the rotational direction of electron spin precession in semiconductors
Oestreich, M.; Hägele, D.; Schneider, H.C.; Knorr, A.; Hansch, A.; Hallstein, S.; Schmidt, K.H.; Köhler, K.; Koch, S.W.; Rühle, W.W.
Journal Article
1998Electron paramagnetic resonance and photoluminescence studies of chromium in SrS
Kreissl, J.; Troppenz, U.; Hüttl, B.; Schrottke, L.; Fouassier, C.
Journal Article
1998Excitonic structure and spatially indirect recombination in MOCVD-grown GaN/Al(x)Ga(1-x)N heterostructures
Kunzer, M.; Kaufmann, U.; Maier, M.; Obloh, H.
Conference Paper
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Conference Paper, Journal Article
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Journal Article
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Conference Paper, Journal Article
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Conference Paper, Journal Article
1997MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Kuenzel, H.; Boettcher, J.; Hase, A.; Hensel, H.-J.; Janiak, K.; Urmann, G.; Paraskevopoulos, A.
Conference Paper, Journal Article
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Conference Paper
1997Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.
Journal Article
1997Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1996Electro-optic excitation/de-excitation effects in SrS:Ce ACTFEL devices from 15 to 300 K
Plant, T.K.; Troppenz, U.; Hüttl, B.; Velthaus, K.O.; Mauch, R.H.
Conference Paper, Journal Article
1996Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.
Journal Article
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Conference Paper
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Conference Paper
1996Luminescence properties of SrS:Ce3+, Cl thin films
Hüttl, B.; Velthaus, K.O.; Troppenz, U.; Mauch, R.H.
Conference Paper, Journal Article
1996MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications
Kuenzel, H.; Albrecht, P.; Gibis, R.; Hamacher, M.; Schelhase, S.
Conference Paper, Journal Article
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Journal Article
1995Characterization of residual transition metal ions in GaN and AlN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K.
Conference Paper
1995Electron paramagnetic resonance identification of an Fe-Ag pair in CdTe
Christmann, P.; Volm, D.; Meyer, B.K.; Schneider, J.; Sinerius, D.; Benz, K.W.
Journal Article
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Journal Article
1995Luminescence yield of SrS:Ce,Na powders
Hüttl, B.; Troppenz, U.; Venghaus, H.; Mauch, R.H.; Kreissl, J.; Garcia, A.; Fouassier, C.; Benalloul, P.; Barthou, C.; Benoit, J.; Gendron, F.; Ronda, C.
Conference Paper, Journal Article
1995Photoluminescence of residual transition metal impurities in GaN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.
Journal Article
1994Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W.
Journal Article
1994Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.
Journal Article
1994Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type delta-doped GaAs-Be/AlxGa1-xAs double-heterostructures.
Wagner, J.; Richards, D.; Schneider, H.; Fischer, A.; Ploog, K.
Journal Article
1994Fourier transform photoluminescence spectroscopy of n-type bulk InAs and InAs/AlSb single quantum wells
Fuchs, F.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Conference Paper
1994High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.
Pletschen, W.; Bachem, K.H.; Rothemund, W.; Winkler, K.; Fekete, D.
Conference Paper
1994Incorporation of Be into InxGa1-xAs /0.004 equal or smaller than x equal or smaller than 0.17/ studied by photoluminescence and resonant Raman spectroscopy of local vibrational modes.
Alvarez, A.L.; Wagner, J.; Calle, F.; Maier, M.; Gutierrez, G.; Sacedon, A.; Calleja, E.; Munoz, E.
Journal Article
1994Influence of delta doping profile and interface roughness on the transport properties of pseudomorphic heterostructures.
Fernandez de Avila, S.; Sanchez-Rojas, J.L.; Gonzalez-Sanz, F.; Calleja, E.; Munoz, E.; Hiesinger, P.; Köhler, K.; Jantz, W.
Journal Article
1994Iron acceptors in gallium nitride -GaN-.
Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Monemar, B.; Akasaki, I.; Amano, H.
Journal Article
1994ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H.
Journal Article
1994Photoluminescence and efficiency of Ce3+ in SrS powders
Hüttl, B.; Müller, G.O.; Mach, R.; Fouassier, C.; Benalloul, P.
Conference Paper, Journal Article
1994Resonant quenching of exciton photoluminescence in coupled GaAs/AlAs quantum wells - effect of exciton binding energy.
Schneider, H.; Wagner, J.; Ploog, K.
Journal Article
1994Spatially direct and indirect photoluminescence from InAs/AlSb heterostructures
Fuchs, F.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Journal Article
1994Trailing edge phenomena in SrS:CeCl3 thin film electroluminescent devices
Troppenz, U.; Hüttl, B.; Velthaus, K.O.; Mauch, R.H.
Conference Paper, Journal Article
1993Cross relaxation and radiative recombination of Co2plus ions in ZnS.
Fuchs, F.; Koidl, P.
Journal Article
1993Doping-density dependence of photoluminescence in highly Si-doped GaAs/Al(x)Ga(1-x)As quantum wells from below to above the metallic limit
Harris, C.I.; Monemar, B.; Kalt, H.; Köhler, K.
Journal Article
1993Electronic and optical properties of low-dimensional semiconductor structures
Wagner, J.
Conference Paper
1993Enhancement of the in-plane effective mass of electrons in modulation-doped In(x)Ga(1-x)As quantum wells due to confinement effects
Hendorfer, G.; Seto, M.; Ruckser, H.; Jantsch, W.; Helm, M.; Brunthaler, G.; Jost, W.; Obloh, H.; Köhler, K.; As, D.J.
Journal Article
1993High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence
Wang, Z.M.; Windscheif, J.; As, D.J.; Jantz, W.
Journal Article
1993Hydrogen passivation of shallow impurities in GaAs/AlGaAs quantum wells.
Harris, C.I.; Stutzmann, M.; Köhler, K.
Journal Article
1993Observation of extremely long electron-spin-relaxation times in p-type delta-doped GaAs/Al(x)Ga(1-x)As double heterostructures
Schneider, H.; Richards, D.; Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1993Optical spectroscopy of CdHgTe/CdTe quantum wells and superlattices
Monterrat, E.; Ulmer, L.; Magnea, N.; Mariette, H.; Pautrat, J.L.; Kheng, K.; Fuchs, F.
Journal Article
1993Optical spectroscopy of shallow impurity states in semiconductor quantum wells.
Monemar, B.; Holtz, P.O.; Harris, C.I.; Bergmann, J.P.; Kalt, H.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Köhler, K.; Schweizer, T.
Journal Article
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Journal Article
1992Fermi edge singularity and screening effects in the luminescence spectra of Si or Be delta-doped GaAs.
Ganser, P.; Fischer, A.; Köhler, K.; Ploog, K.; Wagner, J.
Journal Article
1992Infrared photoluminescence investigations on narrow-band-gap Hg1-XCdXTe
Fuchs, F.; Schwarz, K.; Koidl, P.
Conference Paper
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Conference Paper, Journal Article
1992Optically induced carrier transfer in silicon anti-modulation-doped GaAs/Al(x)Ga(1-x)As single quantum wells
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Köhler, K.
Journal Article
1992Screening and correlation effects in degenerately center doped GaAs/AlGaAs single quantum wells.
Harris, C.I.; Kalt, H.; Monemar, B.; Köhler, K.
Journal Article
1992Ultrafast dephasing in GaAs and GaAs/AlGaAs quantum wells
Leo, K.; Haring Bolivar, P.; Maidorn, G.; Kurz, H.; Köhler, K.
Conference Paper
1991Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers.
Wang, Z.M.; As, D.J.; Jantz, W.; Windscheif, J.
Journal Article
1991Correlation of the D-band photoluminescence with spatial properties of dislocations in silicon
Weronek, K.; Weber, J.; Höpner, A.; Ernst, F.; Stefaniak, M.; Alexander, H.; Buchner, R.
Conference Paper
1991Fermi-edge singularity and band-filling effects in the luminescence spectrum of Be-delta-doped GaAs
Ruiz, A.; Ploog, K.; Wagner, J.
Journal Article
1991Indirect stimulated emission at room temperature in the visible range.
Bauser, E.; Kalt, H.; Köhler, K.; Lu, Y.-C.; Rinker, M.
Conference Paper
1991Indirect-to-direct transition of stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Bauser, E.; Ganser, P.; Köhler, K.
Journal Article
1991Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.
Journal Article
1991Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Rosenzweig, M.; Ebert, W.; Franke, D.; Grote, N.; Sartorius, B.; Wolfram, P.
Conference Paper, Journal Article
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Journal Article
1991Origin of the D-band photoluminescence in silicon
Weronek, K.; Weber, J.; Buchner, R.
Conference Paper
1991Quantum beats of excitons in quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Köhler, K.; Damen, T.C.; Göbel, E.O.
Journal Article
1991Rekombination an Versetzungen in Silizium und Germanium
Weronek, K.; Weber, J.; Alexander, H.; Buchner, R.
Conference Proceedings
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Journal Article
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Conference Paper
1990Influence of RIE- induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures.
As, D.J.; Kaufel, G.; Köhler, K.; Rothemund, W.; Zappe, H.P.; Jantz, W.; Schweizer, T.; Frey, T.
Journal Article
1990Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells.
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Schweizer, T.; Köhler, K.
Journal Article
1990Nonthermal occupation of higher subbands in semiconductor superlattices via sequential resonant tunneling
Grahn, H.T.; Rühle, W.W.; Klitzing, K. von; Ploog, K.; Schneider, H.
Journal Article
1990Optical detection of resonant tunneling in GaAs/AlAs superlattices.
Grahn, H.T.; Klitzing, K. von; Ploog, K.; Schneider, H.
Conference Paper
1990Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs
Ploog, K.; Fischer, A.; Wagner, J.
Journal Article
1990A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Harris, C.; Monemar, B.; Kalt, H.; Schweizer, T.; Köhler, K.
Conference Paper
1990Quantum beats of free and bound excitons in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Köhler, K.; Damen, T.C.
Journal Article
1990Subpicosecond transient four-wave-mixing experiments. A novel method to study resonant tunneling.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Journal Article
1989Gamma- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells.
Alexander, M.G.W.; Nido, M.; Reimann, K.; Rühle, W.W.; Köhler, K.
Journal Article
1989Origin and penetration depth of thermal degradation in InP
Sartorius, B.; Pfanner, K.
Journal Article
1989Tunneling between two quantum wells - In0.35Ga0.47As/InP versus GaAs/Al0.35Ga0.65As.
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Sauer, R.; Köhler, K.; Tsang, W.T.
Journal Article
1988Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K.
Journal Article
1987Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M.
Conference Paper, Journal Article