Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Hybrid photonic integration of active optoelectronic devices on polymer PLC platform
Zhang, Z.; Wang, J.; Mettbach, N.; Zawadzki, C.; Möhrle, M.; Keil, N.; Grote, N.
Conference Paper
2008107 Gbit/s RZ-DPSK transmission using an EDTM integrated receiver
Schubert, C.; Ludwig, R.; Hüttl, B.; Hu, H.; Schmidt-Langhorst, C.
Conference Paper
2008Data evaluation for depth calibration of a customary PDM range imaging sensor considering objects with different albedo
Radmer, J.; Sabov, A.; Krüger, J.
Conference Paper
2008Electronic and photoconductive properties of ultrathin InGaN photodetectors
Lebedev, V.; Polyakov, V.M.; Hauguth-Frank, S.; Cimalla, V.; Wang, C.-Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J.G.; Morales, F.M.; Gonzales, D.; Ambacher, O.
Journal Article
2003Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors
Yang, Q.K.; Pfahler, C.; Schmitz, J.; Pletschen, W.; Fuchs, F.
Conference Paper
1998Wachstum und Charakterisierung von InAs/GaInSb Übergittern und ihre Anwendung als Photodetektoren
Weimar, U.
Dissertation
1997Low-power photocurrent nonlinearity in quantum well infrared detectors
Mermelstein, C.; Schneider, H.; Sa'ar, A.; Schönbein, C.; Walther, W.; Bihlmann, G.
Journal Article
1996Phasenmeßfehler und Optimierung eines phasenschiebenden Speckleinterferometers bei Verwendung eines Photosensor-Arrays mit begrenzter Dynamik und ausgedehnten Elementen
Maack, T.; Kowarschik, R.; Notni, G.
Conference Paper
1995Bildinformationen parallel verarbeiten mit monolithischen Photosensoren
Schanz, M.; Klinke, R.; Machul, O.; Budde, W.; Kauert, R.
Journal Article
1994Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors.
Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D.
Journal Article
1994Monolithische Photosensorsysteme
Klinke, R.; Machul, O.; Schanz, M.
Conference Paper
1994Optical response of a pseudomorphic HFET photodetector up to 10 GHz. TH1D-6
Bangert, A.; Rosenzweig, J.; Ludwig, M.; Bronner, W.; Hofmann, P.; Köhler, K.
Conference Paper
1994Voltage dependence of the optical response of a pseudomorphic HFET-photodetector
Bangert, A.; Rosenzweig, J.; Bosch, R.; Bronner, W.; Köhler, K.; Raynor, B.
Conference Paper
1993Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Journal Article
1993Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J.
Journal Article
1992Diffusive electrical conduction in high-speed p-i-n photodetectors.
Schneider, H.; Larkins, E.C.; Fleissner, J.; Bender, G.; Koidl, P.; Ralston, J.D.
Journal Article
1992Photovoltaic intersubband photodetectors using GaAs quantum wells confined by AlAs tunnel barriers.
Dischler, B.; Fuchs, F.; Kheng, K.; Koidl, P.; Ralston, J.D.; Schneider, H.
Book Article
1991Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes
Lambsdorff, M.; Klingenstein, M.; Kuhl, J.; Moglestue, C.; Rosenzweig, J.; Axmann, A.; Schneider, J.; Hülsmann, A.; Leier, H.; Forchel, A.
Journal Article
1990Direct observation of the electron and hole contributions in the impulse response of a metal-semiconductor-metal Schottky diode.
Lambsdorff, M.; Kuhl, J.; Klingenstein, M.; Moglestue, C.; Axmann, A.; Schneider, J.; Leier, H.; Forchel, A.; Rosenzweig, J.
Conference Paper