Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Linear and efficient doherty PA revisited
Musolff, Christian; Kamper, Michael; Abou-Chahine, Zeid; Fischer, Georg
Journal Article
2004A broadband 75-100 GHz MMIC doubler
Lynch, J.; Entchev, E.; Lyons, B.; Tessmann, A.; Massler, H.; Leuther, A.; Schlechtweg, M.
Conference Paper
2004Coplanar W-band low noise amplifier MMIC using 100-NM gate-length GaAs PHEMTs
Bessemoulin, A.; Grunenputt, J.; Fellon, P.; Tessmann, A.; Kohn, E.
Conference Paper
2003A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Quay, R.; Ramberger, S.; Massler, H.; Schlechtweg, M.
Journal Article
2003Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology
Seemann, K.; Ramberger, S.; Tessmann, A.; Quay, R.; Schneider, J.; Riessle, M.; Walcher, H.; Kuri, M.; Kiefer, R.; Schlechtweg, M.
Conference Paper
2002A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Bessemoulin, A.; Massler, H.; Quay, R.; Ramberger, S.; Schlechtweg, M.
Conference Paper
2002Intercept point behavior of Ka-Band GaAs high power amplifiers
Merkle, T.; Tessmann, A.; Ramberger, S.
Conference Paper
2001Design of coplanar power amplifiers for millimeter-wave system applications including thermal aspects
Bessemoulin, A.; Marsetz, W.; Baeyens, Y.; Osorio, R.; Massler, H.; Hülsmann, A.; Schlechtweg, M.
Journal Article
2001Monolithisch integrierte Millimeterwellen-Oszillatoren auf der Basis von Heterostruktur-Feldeffekttransistoren
Kudszus, S.
Dissertation
2001Push-Push Oscillators for 94 and 140 GHz Applications using standard pseudomorphic GaAs HEMTs
Kudszus, S.; Haydl, W.H.; Tessmann, A.; Bronner, W.; Schlechtweg, M.
Conference Paper
2001Suppression of parasitic substrate modes in Flip-Chip packaged coplanar W-Band amplifier MMICs
Tessmann, A.; Haydl, W.H.; Kerssenbrock, T.V.; Heide, P.; Kudszus, S.
Conference Paper
2000A coplanar 148 GHz cascode amplifier MMIC using 0.15 µm GaAs PHEMTs
Tessmann, A.; Wohlgemuth, O.; Reuter, R.; Haydl, W.; Massler, H.; Hülsmann, A.
Conference Paper
2000Fluorine contamination of PHEMTs during processing
Hülsmann, A.; Bronner, W.; Leuther, A.; Maier, M.; Weimann, G.
Conference Paper
1998Influence of layout and packaging on the temperature of GaAs power PHEMTs
Marsetz, W.; Dammann, M.; Kawashima, H.; Rüdiger, J.; Matthes, B.; Hülsmann, A.; Schlechtweg, M.
Conference Paper
1997High performance double recessed Al(0.2)Ga(0.8)As/In(0.25)Ga(0.75)As PHEMTs for microwave power applications
Marsetz, W.; Hülsmann, A.; Kleindienst, T.; Fischer, S.; Demmler, M.; Bronner, W.; Fink, T.; Köhler, K.; Schlechtweg, M.
Conference Paper