Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Nanostructured thermoelectrics: Bi2Te3 / Sb2Te3 based superlattice systems fabricated by MBE and sputtering
Winkler, Markus
Dissertation
2013Beiträge zur Aufklärung des Einbaus von Titan in PbTe und (Pb,Ge)Te in Bezug auf eine Optimierung der thermoelektrischen Gütezahl ZT
König, Jan D.
Dissertation
2010InN nanocolumns
Grandal, J.; Sánchez-García, M.A.; Calleja, E.; Lazic, S.; Gallardo, E.; Calleja, J.M.; Luna, E.; Trampert, A.; Niebelschütz, F.; Cimalla, V.; Ambacher, O.
Book Article
2008Growth of thick films CdTe from the vapor phase
Sorgenfrei, R.; Greiffenberg, D.; Bachem, K.H.; Kirste, L.; Zwerger, A.; Fiederle, M.
Journal Article
2008Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.
Journal Article
2007Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K.
Conference Paper, Journal Article
2007Impact of interface formation on intersubband transitions in MBE GaInAs:Si/AlAsSb multiple coupled DQWs
Biermann, K.; Künzel, H.; Tribuzy, C.V.-B.; Ohser, S.; Schneider, H.; Helm, M.
Conference Paper
2007Solid source MBE growth on InP-based DHBTs for high-speed data communication
Aidam, R.; Lösch, R.; Driad, R.; Schneider, K.; Makon, R.E.
Conference Paper, Journal Article
2006GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J.
Journal Article
2006Hochratige optische Empfänger für 80/160 Gbit/s
Bach, H.G.; Beling, A.; Ebert, W.; Eckhardt, T.; Gibis, R.; Kunkel, R.; Maul, B.; Mekonnen, G.G.; Sahin, G.; Schlaak, W. et al.
Report
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Journal Article
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2005Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
Walther, M.; Schmitz, J.; Rehm, R.; Kopta, S.; Fuchs, F.; Fleißner, J.; Cabanski, W.; Ziegler, J.
Conference Paper, Journal Article
2005High temperature (T >= 400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers
Yang, Q.K.; Mann, C.; Fuchs, F.; Köhler, K.; Bronner, W.
Conference Paper, Journal Article
2005High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D.
Journal Article
2005MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper, Journal Article
2005Metallorganische Molekularstrahlepitaxie von GaN und InN
Aderhold, J.
Dissertation
2005Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M.
Journal Article
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Conference Paper
2004Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
Aidam, R.; Lösch, R.; Walther, M.; Driad, R.; Kallenbach, S.
Conference Paper
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Journal Article
2003Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2003Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2002Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2001Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G.
Journal Article
2000Antimonidische III/V-Halbleiterheterostrukturen für Infrarot-Diodenlaser
Simanowski, S.
Dissertation
2000Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.
Journal Article
1999Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.
Journal Article
1999Solid-solubility limits of Be in molecular beam epitaxy grown Al(x)Ga(1-x)As layers and short-period superlattices
Gaymann, A.; Maier, M.; Köhler, K.
Journal Article
1994Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy
Wagner, J.; Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Conference Paper
1994Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P.
Journal Article
1993Grenzflächen- und Materialeigenschaften von Al0.3Ga0.7As/InxGa1-xAs/GaAs Heterostrukturen
Schweizer, T.
Dissertation
1993Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasers.
Lambrecht, A.; Böttner, H.; Agne, M.; Kurbel, R.; Fach, A.; Halford, B.; Schießl, U.; Tacke, M.; Schiessl, U.
Journal Article
1993Nucleation, relaxation and redistribution of Si layers in GaAs.
Brandt, O.; Crook, G.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Maier, M.; Wagner, J.
Journal Article
1993Shadow mask MBE for the fabrication of lead chalcogenide buried heterostructure lasers
Lambrecht, A.; Kurbel, R.; Agne, M.
Journal Article
1992Compositional analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
Höpner, A.; As, D.J.; Köhler, K.; Maier, M.
Conference Paper
1992Epitaxial growth of laterally structured lead chalcogenide lasers
Lambrecht, A.; Fach, A.; Kurbel, R.; Halford, B.; Böttner, H.; Tacke, M.
Conference Paper
1991Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.
Schneider, J.; Müller, H.D.; Fuchs, F.; Thonke, K.; Dörnen, A.; Ralston, J.D.
Journal Article
1991Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J.
Conference Paper
1991Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
Kuhn, S.; Evers, J.; Böttner, H.; Herres, N.; Lambrecht, A.; Spanger, B.; Tacke, M.
Journal Article
1991Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures.
Hiesinger, P.; Schmälzlin, J.; Fuchs, F.; Ralston, J.D.; Wagner, J.
Journal Article
1991Picosecond optical nonlinearity in lead chalcogenide semiconductors.
Buhleier, R.; Elsaesser, T.; Klann, R.; Lambrecht, A.
Journal Article
1990Cathodoluminescence study of erbium in La1-xErxF3 epitaxial layers on Si-111-.
Müller, H.D.; Schneider, J.; Lüth, H.; Strümpler, R.
Journal Article
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Journal Article
1990Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV-VI compounds.
Clemens, H.; Voiticek, A.; Holzinger, A.; Bauer, G.
Journal Article
1990Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K.
Journal Article
1989Monitoring of gaseous pollutants by tunable diode lasers '88
: Grisar, R.; Schmidtke, G.; Tacke, M.; Restelli, G.
Conference Proceedings
19883-D project and current statics of 3-D technology in West Germany
Seegebrecht, P.
Conference Paper
1988Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy.
Herres, N.; Richter, H.J.; Seelmann-Eggebert, M.; Smith, R.; Wennekers, P.
Journal Article
1988Distributed Bragg reflector lead-tin-selenide/lead-europium-tin-selenide diode lasers with a broad single-mode tuning range.
Shani, Y.; Rosman, R.; Norton, P.; Katzir, A.; Preier, H.M.; Tacke, M.
Journal Article
1988Entwicklung mikrostrukturierter DH-Diodenlaser und Detektoren für den nahen und mittleren infraroten Spektralbereich unter Einsatz der Molekularstrahlepitaxie
Böttner, H.; Tacke, M.
Conference Paper
1988Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1-XEuXSe.
Norton, P.R.; Böttner, H.; Lambrecht, A.; Spanger, B.; Tacke, M.
Journal Article
1988Nonlinear optical studies of relaxation times of carriers in MBE layers of PbSe and PbEuSe.
Dorbath, K.; Häfele, H.-G.; Tacke, M.; Lambrecht, A.
Journal Article
1988REM- und TEM-Untersuchungen an epitaktischen Blechalkogenid-Schichten auf -100-PbSe-Flächen
Böttner, H.; Foitzik, A.; Lambrecht, A.; Spanger, B.
Journal Article
1988A zeeman study of the 1.54 micrometer transition in molecular beam epitaxial GaAs-Er.
Thonke, K.; Hermann, H.U.; Schneider, J.
Journal Article
1987Erbium doping of molecular beam epitaxial GaAs
Smith, R.S.; Müller, H.D.; Wennekers, P.; Maier, M.; Ennen, H.
Journal Article
1987Monitoring of gaseous pollutants by tunable diode lasers '86
: Grisar, R.; Schmidtke, G.; Tacke, M.; Restelli, G.
Conference Proceedings
1987Photoluminescence excitation measurements on GaAs-Er grown by molecular-beam epitaxy
Müller, H.D.; Smith, R.S.; Ennen, H.; Wagner, J.
Journal Article
1984Halbleiter-Emitter fuer den mittleren und fernen infraroten Spektralbereich
Bachem, K.H.
Book Article
1984MBE - A tool for fabricating IV-VI compound diode lasers.
Norton, P.; Bachem, K.H.; Preier, H.M.
Book Article