| | |
|---|
| 2017 | Material quality frontiers of MOVPE grown AIGaAs for minority carrier devices
Heckelmann, S.; Lackner, D.; Dimroth, F.; Bett, A.W. | Journal Article, Conference Paper |
| 2016 | Gallium phosphide window layer for silicon solar cells
Feifel, M.; Rachow, T.; Benick, J.; Ohlmann, J.; Janz, S.; Hermle, M.; Dimroth, F.; Lackner, D. | Journal Article |
| 2011 | Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J. | Journal Article, Conference Paper |
| 2011 | Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers
Gutt, R.; Passow, T.; Pletschen, W.; Kunzer, M.; Kirste, L.; Forghani, K.; Scholz, F.; Klein, O.; Kaiser, U.; Köhler, K.; Wagner, J. | Conference Paper |
| 2011 | Micro-electroluminescence of cyan InGaN-based multiple quantum well structures
Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U.T.; Hahn, B. | Journal Article |
| 2009 | Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study
Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U. | Journal Article |
| 2007 | Near-UV to violet LEDs - wavelength dependence of efficiency limiting processes
Kunzer, M.; Kaufmann, U.; Köhler, K.; Leancu, C.-C.; Liu, S.; Wagner, J. | Journal Article |
| 2003 | Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J. | Conference Paper |
| 2002 | Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
Agert, C.; Gladkov, P.S.; Bett, A.W. | Journal Article |
| 1999 | Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J. | Journal Article |
| 1998 | Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N. | Conference Paper, Journal Article |
| 1996 | Fabrication of a heterodyne receiver OEIC with optimized integration process using three MOVPE growth steps only
Hamacher, M.; Trommer, D.; Li, K.; Schroeter-Janssen, H.; Rehbein, W.; Heidrich, H. | Journal Article |
| 1995 | On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D. | Conference Paper |
| 1994 | Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
Kaiser, R.; Fidorra, F.; Heidrich, H.; Albrecht, P.; Rehbein, W.; Malchow, S.; Schroeter-Janssen, H.; Franke, D.; Sztefka, G. | Conference Paper |
| 1994 | ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H. | Journal Article |
| 1992 | GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W. | Journal Article |
| 1992 | MOVPE growth, technology and characterization of Ga0.5In0.5P/GaAs heterojunction bipolar transistors
Bachem, K.H.; Pletschen, W.; Winkler, K.; Lauterbach, T.; Maier, M. | Conference Paper |
| 1992 | Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D. | Conference Paper |
| 1991 | Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G. | Conference Paper, Journal Article |
| 1991 | Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine
Neumann, G.; Bachem, K.H.; Lauterbach, T.; Maier, M. | Conference Paper |
| 1991 | Optical thickness mapping of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.; Wolfram, P.; Franke, D. | Journal Article |
| 1991 | Photolumineszenz-Untersuchungen an GaAs/AlxGa1-xAs-Heterostrukturen
Korf, S. | Thesis |
| 1988 | A novel organo-lithium based production method for trimethylindium
Reier, F.W.; Wolfram, P.; Schumann, H. | Conference Paper, Journal Article |