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| 2012 | Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A. | Poster |
| 2011 | Light switched plasma charging protection device for high-field characterization and flash memory protection
Sommer, S.P.; Paschen, U.; Figge, M.; Vogt, H. | Journal Article |
| 2010 | Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H. | Conference Paper |
| 2010 | Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T. | Conference Paper |
| 2009 | Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P. | Conference Paper |
| 2009 | Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Conference Paper |
| 2009 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Conference Paper, Journal Article |
| 2008 | Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Conference Paper |
| 2008 | Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H. | Conference Paper |
| 2008 | On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H. | Conference Paper |
| 2008 | Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H. | Conference Paper |
| 2008 | UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H. | Poster |
| 2002 | Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J. | Conference Paper |
| 2000 | Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Yu, E.; Shen, J.; Walther, M.; Lee, T.; Zhang, R. | Journal Article |
| 1995 | Light dependence of partially depleted SOI-MOSFETs using SIMOX substrates
Werner, R.; Zimmermann, C.; Kalz, A. | Journal Article |
| 1992 | Einsatz von ANSYS beim Entwurf von Sensoren in der Mikrosystemtechnik
Erlebach, A.; Kunze, D.; Müller, M. | Conference Paper |
| 1992 | Gassensoren auf Siliziumbasis
Kohl, D.; Mokwa, W. | Journal Article |
| 1992 | The self-heating effect and its influence on the electrical properties of SOI MOSFETs
Berger, M.; Chai, Z. | Conference Paper |
| 1992 | SIMOX, a silicon-technology for high temperature
Burbach, G. | Conference Paper |
| 1991 | Gas-sensitive MOSFETs - an overview
Drost, S.; Endres, H.-E. | Conference Paper |
| 1991 | Gassensitive MOSFETs with an adsorbing dielectric layer
Drath, E.; Drost, S.; Endres, H.-E. | Conference Paper |
| 1991 | Gassensoren auf der Basis von Feldeffekttransistoren mit Heteropolysiloxanschichten
Drost, S. | Dissertation |
| 1990 | A charge-sheet capacitance model based on drain current modeling
Budde, W.; Lamfried, W.H. | Journal Article |
| 1990 | Dielektrische Gassensoren
Drost, S.; Endres, H.-E. | Journal Article |
| 1988 | MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology
Dobos, K.; Mokwa, W.; Vogt, H.; Zhang, Y.; Zimmer, G.; Xiao, G. | Conference Paper |
| 1987 | Fabrication of halfmicron MOSFETs by means of X-ray lithography
Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P. | Journal Article |
| 1987 | Half micrometer N-MOS technology using X-ray lithography
Huber, H.-L.; Lauer, V.; Bauer, F.; Korec, J.; Balk, P. | Conference Paper |