Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping
Conference Paper
2019Process and design optimization of SiC MOSFET for low on-state resistance
Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton
Presentation
2018Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.
Conference Paper
2017Analysis of the effect of TSV-induced stress on devices performance by direct strain and electrical measurements and FEA simulations
Kteyan, Armen; Mühle, Uwe; Gall, Martin; Sukharev, Valeriy; Radojcic, Riko; Zschech, Ehrenfried
Journal Article
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Conference Paper
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Journal Article
2014Empirical model for the effective electron mobility in silicon nanowires
Granzner, R.; Polyakov, V.M.; Schippel, C.; Schwierz, F.
Journal Article
2014Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Conference Paper
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2011Light switched plasma charging protection device for high-field characterization and flash memory protection
Sommer, S.P.; Paschen, U.; Figge, M.; Vogt, H.
Journal Article
2010Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides
Grieb, M.; Noborio, M.; Peters, D.; Bauer, A.J.; Friedrichs, P.; Kimoto, T.; Ryssel, H.
Conference Paper
2010Electrical characterization and reliability of nitrided-gate insulators for N- and P-type 4H-SiC MIS devices
Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.
Conference Paper
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2009UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Beuer, S.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Conference Paper, Journal Article
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale
Schmitt, H.; Amon, B.; Petersen, S.; Rommel, M.; Bauer, A.J.; Ryssel, H.
Poster
2002Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J.
Conference Paper
2000Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Yu, E.; Shen, J.; Walther, M.; Lee, T.; Zhang, R.
Journal Article
1995Light dependence of partially depleted SOI-MOSFETs using SIMOX substrates
Werner, R.; Zimmermann, C.; Kalz, A.
Journal Article
1992Einsatz von ANSYS beim Entwurf von Sensoren in der Mikrosystemtechnik
Erlebach, A.; Kunze, D.; Müller, M.
Conference Paper
1992Gassensoren auf Siliziumbasis
Kohl, D.; Mokwa, W.
Journal Article
1992The self-heating effect and its influence on the electrical properties of SOI MOSFETs
Berger, M.; Chai, Z.
Conference Paper
1992SIMOX, a silicon-technology for high temperature
Burbach, G.
Conference Paper
1991Gas-sensitive MOSFETs - an overview
Drost, S.; Endres, H.-E.
Conference Paper
1991Gassensitive MOSFETs with an adsorbing dielectric layer
Drath, E.; Drost, S.; Endres, H.-E.
Conference Paper
1991Gassensoren auf der Basis von Feldeffekttransistoren mit Heteropolysiloxanschichten
Drost, S.
Dissertation
1990A charge-sheet capacitance model based on drain current modeling
Budde, W.; Lamfried, W.H.
Journal Article
1990Dielektrische Gassensoren
Drost, S.; Endres, H.-E.
Journal Article
1988MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology
Dobos, K.; Mokwa, W.; Vogt, H.; Zhang, Y.; Zimmer, G.; Xiao, G.
Conference Paper
1988MOSFET gas sensor with integrated temperature measurement and heating elements fabricated with standard CMOS technology
Dobos, K.; Mokwa, W.; Vogt, H.; Zhang, Y.; Zimmer, G.; Xiao, G.
Conference Paper