Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Conference Paper
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Journal Article
2010Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Mikulla, M.; Ambacher, O.; Harm, L.; Lorenzini, M.; Rödle, T.; Riepe, K.; Bellmann, K.; Buchheim, C.; Goldhahn, R.
Journal Article, Conference Paper
2010Effizienz von GaInN-Leuchtdioden: Struktur aktiver Schichten unter dem Einfluss substratinduzierter Defekte
Maier, M.
: Ambacher, O.
Dissertation
2010Metal organic chemical vapor deposition of indium oxide for ozone sensing
Wang, C.Y.
Dissertation
2010A novel bio-functionalization of AlGaN/GaN-ISFETs for DNA-sensors
Linkohr, S.; Schwarz, S.; Krischok, S.; Lorenz, P.; Cimalla, V.; Nebel, C.E.; Ambacher, O.
Journal Article, Conference Paper
2008Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD
Wang, C.Y.; Cimalla, V.; Kups, T.; Ambacher, O.; Himmerlich, M.; Krischok, S.
Conference Paper
2004Optical characterization of ferroelectric Strontium-Bismuth-Tantalate (SBT) thin films
Schmidt, C.; Petrik, P.; Schneider, C.; Fried, M.; Lohner, T.; Barsony, I.; Gyulai, J.; Ryssel, H.
Conference Paper, Journal Article
2002(GaIn)(ASP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern
Serries, D.
Dissertation
2002High-reliability MOCVD-grown quantum dot laser
Sellin, R.L.; Ribbat, C.; Bimberg, D.; Rinner, F.; Konstanzer, H.; Kelemen, M.T.; Mikulla, M.
Journal Article
2002Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K.
Journal Article
2002MOCVD of titanium dioxide on the basis of new precursors
Leistner, T.; Lehmbacher, K.; Härter, P.; Schmidt, C.; Bauer, A.J.; Frey, L.; Ryssel, H.
Journal Article
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Conference Paper
2002Non-destructive characterization of strontium bismuth tantalate films
Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zoknai, P.Z.; Barsony, I.; Lohner, T.; Freid, M.; Guylai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.
Journal Article
2000Growth of metastable GaAsSb for InP-based type-II emitters
Peter, M.; Serries, D.; Herres, N.; Fuchs, F.; Kiefer, R.; Winkler, K.; Bachem, K.-H.; Wagner, J.
Conference Paper
1999Band gaps and band offsets in strained GaAs(1-y)Sb(y) on InP grown by metalorganic chemical vapor deposition
Peter, M.; Herres, N.; Fuchs, F.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1999Herstellung und Charakterisierung von antimonidischen III-V Halbleiterheterostrukturen für IR-Diodenlaser
Peter, M.
Dissertation
1999Herstellung und Charakterisierung von InGaN/GaN Heterostrukturen für kurzwellige Emitter
Ramakrishnan, A.
Thesis
1999InP integrated receivers for narrow band radio over fiber systems
Engel, T.; Unterborsch, G.
Conference Paper
1999Light-emitting diodes and laser diodes based on a Ga(1-x)In(x)As/GaAs(1-y)Sb(y) type II superlattice on InP substrate
Peter, M.; Kiefer, R.; Fuchs, F.; Herres, N.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1999MOCVD of ferroelectric thin films
Schmidt, C.; Lehnert, W.; Leistner, T.; Frey, L.; Ryssel, H.
Conference Paper
1998GaInP/GaInAs/GaAs-MODFETs with pseudomorphic GaInP barriers, device concept and device properties
Pletschen, W.; Bachem, K.H.; Chertouk, M.; Bürkner, S.; Braunstein, J.
Conference Paper
1998MOCVD growth of (Ga(1-x)In(x)As-GaAs(1-y)Sb(y))superlattices on InP showing type-II emission at wavelengths beyond 2 mu m
Peter, M.; Winkler, K.; Herres, N.; Fuchs, F.; Müller, S.; Bachem, K.H.; Wagner, J.
Conference Paper
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Conference Paper, Journal Article
1997Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H.
Journal Article
1997MOCVD of ferroelectric thin films
Schmidt, C.; Burte, E.P.
Conference Paper
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1996MOCVD-Züchtung und Charakterisierung von Nitridischen Verbindungshalbleitern
Niebuhr, R.
Dissertation
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Journal Article
1995Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H.
Conference Paper
1995A novel pseudomorphic (GaAs1-xSbx-InyGa1-yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
Peter, M.; Forker, J.; Winkler, K.; Bachem, K.H.; Wagner, J.
Journal Article
1995Pseudomorphic AlGaInP/GaAs MODFETs, novel device concepts for simple fabrication schemes
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1995Realization and modeling of a pseudomorphic (GaAs(1-x)Sb(x)-In(y)Ga(1-y)As)/GaAs bilayer-quantum well
Peter, M.; Winkler, K.; Maier, N.; Herres, N.; Wagner, J.; Fekete, D.; Bachem, K.H.; Richards, D.
Journal Article
199435-40 GHz monolithic VCO's utilizing high-speed GaInP/GaAs HBT's
Riepe, K.; Leier, H.; Marten, A.; Güttich, U.; Dieudonne, J.M.; Bachem, K.H.
Journal Article
1994AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Conference Paper
1994AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties
Bachem, K.H.; Pletschen, W.; Winkler, K.; Fleissner, J.; Hoffmann, C.; Tasker, P.J.
Conference Paper
1994High quality MOCVD-grown AlGaInP/GaAs MODFET structures - an example of successful interface engineering.
Pletschen, W.; Bachem, K.H.; Rothemund, W.; Winkler, K.; Fekete, D.
Conference Paper
1993AlGaInP/GaInAs/GaAs MODFET devices - candidates for optoelectronic integrated circuits
Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.
Journal Article
1993Characterization of Hg1-xCdxTe heterostructures by thermoelectric measurements
Baars, J.; Brink, D.; Edwall, D.D.; Bubulac, L.O.
Journal Article
1992High speed non-selfaligned GaInP/GaAs-TEBT.
Zwicknagl, P.; Schaper, U.; Schleicher, L.; Siweris, H.; Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992Influence of a RF plasma on the nucleation of aluminium using n-trimethy lamine-alane -TMAA- as precursor
Bringmann, U.; Klages, C.-P.; Weber, A.; Schiffmann, K.I.
Conference Paper
1992Low temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells.
As, D.J.; Korf, S.; Wang, Z.M.; Bachem, K.H.; Jantz, W.; Windscheif, J.
Conference Paper
1992A novel GaAs bipolar transistor structure with GaInP-hole injection blocking barrier.
Pletschen, W.; Bachem, K.H.; Lauterbach, T.
Conference Paper
1992Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga0.5In0.5P/GaAs
Lauterbach, T.
Dissertation
1991Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
Neumann, G.; Bender, G.; Herres, N.
Journal Article
1989Gas phase depletion in horizontal MOCVD reactors.
Neumann, G.; Winkler, K.; Bachem, K.H.
Conference Paper
1987Light scattering diagnostics in MOCVD
Richter, W.; Hünermann, L.
Conference Paper