Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Ion implantation for high-efficiency silicon solar cells
Müller, Ralph
: Reinecke, H.; Glunz, S.W.; Lausen, G.
Dissertation
2012BF3 PIII modeling: Implantation, amorphisation and diffusion
Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.
Conference Paper
2007Tiefziehwerkzeuge mit gradierter Randschicht
Schober, R.
Journal Article
2006Kontaminationsprozesse in der Ionenimplantation
Häublein, V.
Dissertation
2004Silicon Front-End Junction Formation - Physics and Technology
: Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W.
Conference Proceedings
2002Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
Laube, M.; Schmid, F.; Pensl, G.; Wagner, G.; Linnarsson, M.; Maier, M.
Journal Article
2002Electrical activation of implanted phosphorus ions in (0001)/(1120)-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Conference Paper
2002Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC
Schmid, F.; Laube, M.; Pensl, G.; Wagner, G.; Maier, M.
Journal Article
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper
1999On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1997Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1997Modifikation der Oberflächeneigenschaften von Polymeren durch Ionenimplantation
Öchsner, R.
Dissertation
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Conference Paper
1996Electrical properties of silicon carbide polytypes
Pensl, G.; Afanasev, V.V.; Bassler, M.; Schadt, M.; Troffer, T.; Heindl, J.; Strunk, H.P.; Maier, M.; Choyke, W.J.
Conference Paper
1996Simulation von Implantationsprofilen mit Methoden der Transporttheorie
Barthel, A.
: Ryssel, H. (Prüfer)
Dissertation
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1995Gitterdeformation in Silicium nach Implantationen von Phosphor
Remmler, M.; Frey, L.; Ryssel, H.
Conference Paper
1995Strain profiles in phosphorus implanted /100/-silicon
Remmler, M.; Frey, L.; Horvath, Z.E.; Ryssel, H.
Conference Paper
1995Untersuchung der SIMOX-Technologie zur Erzeugung anwendungsspezifischer SOI-Substrate
Gassel, H.
Dissertation
1995Verschleißschutz für Fräswerkzeuge durch Ionenimplantation
Klocke, F.; Zamel, S.
Journal Article
1994Ion-beam induced CoSi2 layers - formation and contact properties.
Dehm, C.; Kasko, I.; Ryssel, H.
Journal Article
1994Ionenstrahlmodifizierung von mit dem Laser-Arc abgeschiedenen DLC-Schichten
Kolitsch, A.; Drescher, D.; Scheibe, H.J.
Conference Paper
1993Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements.
Koidl, P.; Uzan-Saguy, C.; Kalish, R.; Bruder, M.; Bachem, K.H.; Wagner, J.
Journal Article
1993Fabrication of sensors and microsystems on SIMOX substrates
Gottfried-Gottfried, R.; Köhler, R.; Kück, H.; Mokwa, W.; Vogt, H.
Conference Paper
1993Novel approach to defect etching in thin film silicon-on-insulator
Gassel, H.; Peter-Weidemann, J.; Vogt, H.
Journal Article
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992The effect of ion implantation on the lifetime of punches
Öchsner, R.; Kluge, A.; Ryssel, H.; Stepper, M.; Straede, C.; Politiek, J.
Conference Paper
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1992Novel approach to defect etching in thin film SOI. Part 1
Gassel, H.; Peter-Weidemann, J.; Vogt, H.
Conference Paper
1992Novel approach to defect etching in thin film SOI. Part 2
Gassel, H.; Peter-Weidemann, J.; Vogt, H.
Conference Paper
1992Raman and ion channeling of damage in ion-implanted GaAs - dependence on ion dose and dose rate.
Desnica, U.V.; Haynes, T.E.; Holland, O.W.; Wagner, J.
Journal Article
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1992Reduction of friction and wear by ion-implanted carbonized photoresit
Bogen, S.; Gyulai, J.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Paper
1991Optimierung der mechanischen und elektrischen Eigenschaften von Oberflächen mittels Ionenimplantation
Grischke, M.; Bethke, R.; Dimigen, H.
Conference Paper
1990Trends in practical process simulation.
Pichler, P.; Ryssel, H.
Journal Article
1989A flexible target chamber for a Varian 350 DF implanter
Kluge, A.; Ryssel, H.; Schork, R.
Journal Article, Conference Paper
1989Ion implantation in single-crystal magnetic ferrite.
Takai, M.; Lu, Y.F.; Minamisono, T.; Namba, S.; Ryssel, H.
Journal Article
1989Process simulation at FhG-AIS
Lorenz, J.
Conference Paper
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Conference Paper
1989Resonant raman scattering on In+-implanted CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Ramsteiner, M.; Wagner, J.
Journal Article
1989Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Conference Paper
1989Simulation of ion implantation into multilayer structures
Wierzbicki, R.J.; Barthel, A.; Lorenz, J.
Conference Paper
1989Simulation of the lateral spread of implanted ions - experiments
Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Simulation of the lateral spread of implanted ions - theory
Barthel, A.; Krüger, W.; Lorenz, J.
Conference Paper
1989Two-dimensional simulation of ion implantation profiles using a personal computer
Barthel, A.; Lorenz, J.; Ryssel, H.
Journal Article, Conference Paper
1989A versatile ion implanter for material modification
Kluge, A.; Öchsner, R.; Ryssel, H.
Journal Article, Conference Paper
1988A comparison of the wear behavior of Ag, B, C, N, Pb and Sn implanted steels with 1.5 to 1.8 % chromium
Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Proceedings
1988CW argon-laser induced zone-melting recrystallization of thin silicon on oxide.
Ryssel, H.; Götzlich, J.; Steinberger, H.; Qiuxia, X
Journal Article
1988Examination of wear, hardness and friction of N, B, C, Ag, Pb and Sn implanted steels with different chromium content
Langguth, K.; Kobs, K.; Kluge, A.; Öchsner, R.; Ryssel, H.
Conference Proceedings
1988The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.
Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G.
Book Article
1988Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J.
Journal Article
1988Safety aspects of ion implantation.
Ryssel, H.
Conference Paper
1988Safety consideration for ion implanters.
Hamers, P.; Ryssel, H.
Book Article
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Journal Article
1987Enhanced endurance life of sputtered MoSX filsm on steel by ion beam mixing.
Kobs, H.; Dimigen, H.; Hübsch, H.; Tolle, H.J.; Leutenbecker, R.; Ryssel, H.
Journal Article
1987Monte Carlo ion implantation and COMPOSITE
Lorenz, J.; Ryssel, H.; Barthel, A.
Conference Paper
1987Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J.
Conference Paper
1987Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C.
Journal Article
1984Germanium extremely heavily doped by Ion-implantation and laser annealing - A photoluminescence study
Axmann, A.; Contreras, G.; Compaan, A.; Cardona, M.; Wagner, J.
Conference Paper
1984Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs.
Haydl, W.H.
Journal Article
1983Doping behavior of implanted Mg in Silicon
Sigmund, H.; Weiss, D.
Book Article
1983Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G.
Journal Article
1982Electron spin resonance of As Ga antisite defects in fast neutronirradiated GaAs
Woerner, R.; Schneider, J.; Kaufmann, U.
Journal Article
1982Range distributions.
Ryssel, H.
Book Article