Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Journal Article
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Conference Paper
1991Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures
Möhrle, M.; Grützmacher, D.; Rosenzweig, M.; Düser, H.
Conference Paper
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Journal Article
1991RF and noise characterization of a monolithically integrated receiver on InP
Feiste, U.; Kaiser, R.; Mekonnen, G.G.; Schramm, C.; Trommer, D.; Unterborsch, G.
Conference Paper
1988Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.
Conference Paper