Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2014Vacancy defect formation in PA-MBE grown C-doped InN
Prozheeva, V.; Tuomisto, F.; Koblmüller, G.; Speck, J.S.; Knübel, A.; Aidam, R.
Journal Article
2011Electron and hole accumulation in InN/InGaN heterostructures
Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.
Journal Article
2010Impact of n-type doping on the terahertz surface emission from c-plane InN
Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Schwierz, F.
Journal Article
2010InN nanocolumns
Grandal, J.; Sánchez-García, M.A.; Calleja, E.; Lazic, S.; Gallardo, E.; Calleja, J.M.; Luna, E.; Trampert, A.; Niebelschütz, F.; Cimalla, V.; Ambacher, O.
Book Article
2010Transport properties of InN
Cimalla, V.; Lebedev, V.; Ambacher, O.; Polyakov, V.M.; Schwierz, F.; Niebelschütz, F.; Ecke, G.; Myers, T.H.; Schaff, W.J.
Book Article
2009Carrier mass measurements in degenerate indium nitride
Pettinari, G.; Polimeni, A.; Capizzi, M.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Lebedev, V.; Cimalla, V.; Ambacher, O.
Journal Article
2008Experimental evidence of different hydrogen donors in n-type InN
Pettinari, G.; Masia, F.; Capizzi, M.; Polimeni, A.; Losurdo, M.; Bruno, G.; Kim, T.H.; Choi, S.; Brown, A.; Lebedev, V.; Cimalla, V.; Ambacher, O.
Journal Article
2008Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation
Matthäus, G.; Cimalla, V.; Pradarutti, B.; Riehemann, S.; Notni, G.; Lebedev, V.; Ambacher, O.; Nolte, S.; Tünnermann, A.
Journal Article