Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion
Solowan, Hans-Michael
: Ambacher, Oliver (Ed.); Schwarz, U.T.; Wöllenstein, J.
Dissertation
2016Insights into interfacial changes and photoelectrochemical stability of InxGa1-xN (0001) photoanode surfaces in liquid environments
Caccamo, L.; Cocco, G.; Martin, G.; Zhou, H.; Fundling, S.; Gad, A.; Mohajerani, M.S.; Abdelfatah, M.; Estrade, S.; Peiro, F.; Dziony, W.; Bremers, H.; Hangleiter, A.; Mayrhofer, L.; Lilienkamp, G.; Moseler, M.; Daum, W.; Waag, A.
Journal Article
2014Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress
Meneghini, M.; Carraro, S.; Meneghesso, G.; Trivellin, N.; Mura, G.; Rossi, F.; Salviati, G.; Holc, K.; Weig, T.; Schade, L.; Karunakaran, M.A.; Wagner, J.; Schwarz, U.T.; Zanoni, E.
Conference Paper
2012Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
Danhof, J.; Schwarz, S.U.; Meyer, T.; Vierheilig, C.; Peter, M.
Journal Article
2012Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
Schade, L.; Schwarz, U.T.; Wernicke, T.; Ploch, S.; Weyers, M.; Kneissl, M.
Journal Article
2011Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
Schade, L.; Schwarz, U.T.; Wernicke, H.; Weyers, M.; Kneissl, M.
Journal Article
2011Micro-electroluminescence of cyan InGaN-based multiple quantum well structures
Meyer, T.; Peter, M.; Danhof, J.; Schwarz, U.T.; Hahn, B.
Journal Article
2011Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T.
Journal Article
2011Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells
Danhof, J.; Vierheilig, C.; Schwarz, U.T.; Meyer, T.; Peter, M.; Hahn, B.
Journal Article
2011Three-dimensional GaN for semipolar light emitters
Wunderer, T.; Feneberg, M.; Lipski, F.; Wang, J.; Leute, R.A.R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, S.; Bertram, F.; Christen, J.; Beirne, G.J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U.T.; Dräger, A.D.; Hangleiter, A.; Scholz, F.
Journal Article
2010Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes
Grzanka, S.; Perlin, P.; Czernecki, R.; Marona, L.; Bockowski, M.; Lucznik, B.; Leszczynski, M.; Khachapuridze, A.; Goss, J.; Schwarz, U.; Suski, T.
Journal Article, Conference Paper
2010Waveguide design of green InGaN laser diodes
Lermer, T.; Schillgalies, M.; Breidenassel, A.; Queren, D.; Eichler, C.; Avramescu, A.; Müller, J.; Scheibenzuber, W.; Schwarz, U.T.; Lutgen, S.; Strauss, U.
Journal Article
2009Determination of the composition of In(x)Ga(1-x)N from strain measurements
Morales, F.M.; Gonzales, D.; Lozano, J.G.; García, R.; Hauguth-Frank, S.; Lebedev, V.; Cimalla, V.; Ambacher, O.
Journal Article
2009Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GalnN/GaN light-emitting diodes
Passow, T.; Maier, M.; Kunzer, M.; Crenguta-Columbina, L.; Liu, S.; Wiegert, J.; Schmidt, R.; Köhler, K.; Wagner, J.
Journal Article, Conference Paper
2008Electronic and photoconductive properties of ultrathin InGaN photodetectors
Lebedev, V.; Polyakov, V.M.; Hauguth-Frank, S.; Cimalla, V.; Wang, C.-Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J.G.; Morales, F.M.; Gonzales, D.; Ambacher, O.
Journal Article
2008Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
Maier, M.; Köhler, K.; Kunzer, M.; Wiegert, J.; Liu, S.; Kaufmann, U.; Wagner, J.
Conference Paper, Journal Article
2007Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B.
Conference Paper
2005Kurzwellige Diodenlaser auf der Basis der Gruppe III-Nitride
Sommer, F.
Dissertation
2005Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V.
Journal Article
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Journal Article
1999Composition dependence of the band gap energy of In(x)Ga(1-x)N layers on GaN(x < = 0.15) grown by metal-organic chemical vapor deposition
Wagner, J.; Ramakrishnan, A.; Behr, D.; Maier, M.; Herres, N.; Kunzer, M.; Obloh, H.; Bachem, K.H.
Conference Paper
1999Resonant raman scattering as a selective probe for compositional inhomogeneity in low In content (InGa)N
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Kunzer, M.; Maier, M.; Bachem, K.H.
Conference Paper
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Journal Article
1998Spectroscopic ellipsometry characterization of (InGa)N on GaN
Wagner, J.; Ramakrishnan, A.; Behr, D.; Obloh, H.; Kunzer, M.; Bachem, K.H.
Journal Article
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Conference Paper