Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2005High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm
Kallenbach, S.; Kelemen, M.T.; Aidam, R.; Lösch, R.; Kaufel, G.; Mikulla, M.; Weimann, G.
Conference Paper
2004High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation
Kallenbach, S.; Kelemen, M.T.; Aidam, R.; Lösch, R.; Kaufel, G.; Mikulla, M.; Weimann, G.
Conference Paper
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Conference Paper, Journal Article
1996Design of fibre matched uncladded rib waveguides on InP with polarization independent fibre coupling loss of 1 dB
Weinert, C.M.
Conference Paper
1995Low-temperature CAIBE processes for InP-based optoelectronics
Daleiden, J.; Eisele, K.; Ralston, J.D.; Fiedler, F.; Vollrath, G.
Conference Paper
1985High-efficiency phase modulators in InGaAsP/InP
Bornholdt, C.; Doldissen, W.; Franke, D.; Krauser, J.; Niggebrugge, U.; Nolting, H.-P.; Schmitt, F.
Conference Paper
1985NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.
Journal Article
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Journal Article
1982Spectral behaviour of InGaAsP/InP 1.3 mu m lasers and implications on the transmission performance of broadband Gbit/s signals
Wenke, G.; Enning, B.
Journal Article