Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2003Determination of the electron capture time in quantum-well infrared photodetectors using time-resolved photocurrent measurements
Steinkogler, S.; Schneider, H.; Walther, M.; Koidl, P.
Journal Article
2003Improved brightness using tapered diode lasers
Kelemen, M.T.; Weber, J.; Mikulla, M.; Weimann, G.
Conference Paper
2003Swept away. QWIPs are fast and can have ideal (~100%) absorption tool
Liu, H.C.; Dudek, R.; Oogarah, T.; Grant, P.D.; Wasilewski, R.; Schneider, H.; Steinkogler, S.; Walther, M.; Koidl, P.
Journal Article
2003Time-resolved electron transport studies on InGaAs/GaAs-QWIPs
Steinkogler, S.; Schneider, H.; Rehm, R.; Walther, M.; Koidl, P.; Grant, R.; Dudek, H.; Liu, C.
Conference Paper, Journal Article
1997Lateral carrier profile for mesa-structured InGaAs/GaAs lasers
Torre, M.S.; Esquivias, I.; Romero, B.; Czotscher, K.; Weisser, S.; Ralston, J.D.; Larkins, E.; Benz, W.; Rosenzweig, J.
Journal Article
1996Carrier profile for In(0.35)Ga(0.65)As/GaAs multiquantum well lasers from capacitance-voltage measurements
Arias, J.; Esquivias, I.; Ralston, J.D.; Larkins, E.C.; Weisser, S.; Rosenzweig, J.; Schönfelder, A.; Maier, M.
Journal Article
1996Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers
Weisser, S.; Larkins, E.C.; Czotscher, K.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Ralston, J.D.; Romero, B.; Sah, R.E.; Schönfelder, A.; Rosenzweig, J.
Journal Article
1996Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Schönfelder, A.; Ralston, J.D.; Czotscher, K.; Weisser, S.; Rosenzweig, J.; Larkins, E.C.
Journal Article
1996Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
Czotscher, K.; Weisser, S.; Larkins, E.C.; Fleissner, J.; Ralston, J.D.; Schönfelder, A.; Rosenzweig, J.; Esquivias, I.
Journal Article
1996Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Esquivias, I.; Fleissner, J.; Maier, M.; Ralston, J.D.; Romero, B.; Schönfelder, A.; Rosenzweig, J.
Conference Paper
1995Improved performance from pseudomorphic InyGa1-yAs-GaAs MQW lasers with low growth temperature AlxGa1-xAs short-period superlattice cladding
Larkins, E.C.; Benz, W.; Esquivias, I.; Rothemund, W.; Baeumler, M.; Weisser, S.; Schönfelder, A.; Fleissner, J.; Jantz, W.; Rosenzweig, J.; Ralston, J.D.
Journal Article
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Journal Article
1995Interdiffusion von GaAs/AlGaAs- und pseudomorphen InGaAs/GaAs-Halbleiterheterostrukturen für optoelektronische Anwendungen
Bürkner, S.
Dissertation
1995Picosecond spectroscopy of optically modulated high-speed laser diodes.
Sutter, D.H.; Schneider, H.; Weisser, S.; Ralston, J.D.; Larkins, E.C.
Journal Article
1995Process parameter dependence of Imurity-free interdiffusion in GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs multible quantum wells
Bürkner, S.; Maier, M.; Larkins, E.C.; Rothemund, W.; O'Reilly, E.P.; Ralston, J.D.
Journal Article
1994Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Tasker, P.J.; Ralston, J.D.; Rosenzweig, J.; Arias, J.
Conference Paper
1994DC and high-frequency properties of In0.35Ga0.65As/GaAs strained-layer MQW laser diodes with p-doping
Esquivias, I.; Weisser, S.; Schönfelder, A.; Ralston, J.D.; Tasker, P.J.; Larkins, E.C.; Fleissner, J.; Benz, W.; Rosenzweig, J.
Conference Paper
1994Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration
Ralston, J.D.; Eisele, K.; Sah, R.E.; Larkins, E.C.; Weisser, S.; Fleissner, J.; Bender, K.; Rosenzweig, J.
Conference Paper
1993Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J.
Conference Paper
1993Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Journal Article
1992Diffusive electrical conduction in high-speed p-i-n photodetectors.
Schneider, H.; Larkins, E.C.; Fleissner, J.; Bender, G.; Koidl, P.; Ralston, J.D.
Journal Article