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| 2021 | InGaAs HEMT MMIC Technology on Silicon Substrate with Backside Field-Plate
Leuther, Arnulf; John, Laurenz; Iannucci, Robert; Christoph, T; Aidam, Rolf; Merkle, Thomas; Tessmann, Axel | Conference Paper |
| 2020 | Broadband and high-gain 400-GHz InGaAs mHEMT medium-power amplifier S-MMIC
Gashi, Bersant; John, Laurenz; Meier, D.; Rösch, Markus; Tessmann, Axel; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver | Conference Paper |
| 2019 | InGaAs SWIR photodetectors for night vision
Rutz, Frank; Bächle, Andreas; Aidam, Rolf; Niemasz, Jasmin; Bronner, Wolfgang; Zibold, Andreas; Rehm, Robert | Conference Paper |
| 2019 | Low-light-level SWIR photodetectors based on the InGaAs material system
Rutz, Frank; Aidam, Rolf; Bächle, Andreas; Niemasz, Jasmin; Zibold, Andreas; Schepperle, Mark; Rehm, Robert | Conference Paper |
| 2019 | THz frequency HEMTs: Future trends and applications
Leuther, Arnulf; Merkle, Thomas; Weber, Rainer; Sommer, Rainer; Tessmann, Axel | Conference Paper |
| 2018 | Electro-optical muzzle flash detection
Eisele, Christian; Krieg, Jürgen; Seiffer, Dirk | Conference Paper |
| 2018 | InGaAs-based SWIR photodetectors for night vision and gated viewing
Rutz, Frank; Aidam, Rolf; Bächle, Andreas; Heussen, Henning; Bronner, Wolfgang; Rehm, Robert; Benecke, Matthias; Sieck, Alexander; Brunner, S.; Göhler, Benjamin; Lutzmann, Peter | Conference Paper |
| 2017 | InGaAs-Avalanche-Photodioden für bildgebende Verfahren im kurzwelligen Infrarot
Kleinow, Philipp
: Lausen, G.; Ambacher, O.; Koos, C. | Dissertation |
| 2017 | Photodetector development at Fraunhofer IAF. From LWIR to SWIR operating from cryogenic close to room temperature
Daumer, Volker; Gramich, Vera; Müller, Raphael; Schmidt, Johannes; Rutz, Frank; Stadelmann, Tim; Wörl, Andreas; Rehm, Robert | Conference Paper |
| 2016 | Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes
Kleinow, P.; Rutz, F.; Aidam, R.; Bronner, W.; Heussen, H.; Walther, M. | Journal Article |
| 2016 | Electro-optical muzzle flash detection
Krieg, Jürgen; Eisele, Christian; Seiffer, Dirk | Conference Paper |
| 2016 | InGaAs-Avalanche-Photodioden für bildgebende Verfahren im kurzwelligen Infrarot
Kleinow, P.
: Ambacher, O. (Referent); Koos, C. (Referent) | Dissertation |
| 2016 | SWIR detectors for low photon fluxes
Rutz, Frank; Kleinow, Philipp; Aidam, Rolf; Bronner, Wolfgang; Stolch, Lukas; Benecke, M.; Sieck, A.; Rehm, Robert | Conference Paper |
| 2015 | Shortwave infrared for night vision applications - illumination levels and sensor performance
Adomeit, Uwe; Krieg, Jürgen | Conference Paper |
| 2015 | SWIR photodetector development at Fraunhofer IAF
Rutz, F.; Kleinow, P.; Aidam, R.; Heussen, H.; Bronner, W.; Sieck, A.; Walther, M. | Conference Paper |
| 2014 | Infrared photodetector development at Fraunhofer IAF
Rutz, F.; Kleinow, P.; Walther, M.; Aidam, R.; Bronner, W.; Kirste, L.; Niemasz, J.; Rehm, R.; Schmitz, J.; Stadelmann, T.; Wauro, M.; Wörl, A.; Sieck, A.; Ziegler, J. | Conference Paper |
| 2014 | Optimization of InGaAs/InAlAs APDs for SWIR detection with demand for high gain and low breakdown voltage
Kleinow, P.; Rutz, F.; Aidam, R.; Bronner, W.; Heussen, H.; Walther, M. | Conference Paper |
| 2013 | InGaAs infrared detector development for SWIR imaging applications
Rutz, F.; Kleinow, P.; Aidam, R.; Bronner, W.; Kirste, L.; Walther, M. | Conference Paper |
| 2012 | 450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology
Leuther, A.; Tessmann, A.; Massler, H.; Aidam, R.; Schlechtweg, M.; Ambacher, O. | Conference Paper |
| 2012 | Heterodyne and spectroscopic room temperature terahertz imaging using InGaAs bow-tie diodes
Valusis, G.; Minkevicius, L.; Kasalynas, I.; Venckevicius, R.; Seliuta, D.; Tamosiunas, V.; Lisauskas, A.; Boppel, S.; Roskos, H.G.; Köhler, K. | Conference Paper |
| 2012 | Influence of built-in drift fields on the performance of InP-based HBTs grown by solid-source MBE
Driad, R.; Aidam, R.; Yang, Q.K. | Journal Article |
| 2009 | High performance compound semiconductor devices and integrated circuits for advanced communication, sensor, and imaging applications
Schlechtweg, M.; Makon, R.E.; Hurm, V.; Driad, R.; Tessmann, A.; Kallfass, I.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O. | Conference Paper |
| 2009 | MMICs and mixed-signal ICs based on III/V technology for highest frequencies and data rates
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Seelmann-Eggebert, M.; Massler, H.; Kuri, M.; Riessle, M.; Zink, M.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O. | Journal Article |
| 2007 | InGaAs/AlAsSb quantum cascade detectors operating in the near infrared
Giorgetta, F.R.; Baumann, E.; Hofstetter, D.; Manz, C.; Yang, Q.K.; Köhler, K.; Graf, M. | Journal Article |
| 2003 | Avalanche multiplication due to impact ionization in quantum-well infrared photodetectors: A quantitative approach
Rehm, R.; Schneider, H.; Walther, M.; Koidl, P.; Weimann, G. | Journal Article |
| 2001 | Responsivity and Gain of InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPS: a Comparative Study
Rehm, R.; Schneider, H.; Schwarz, K.; Walther, M.; Koidl, P.; Weimann, G. | Conference Paper |
| 2000 | Conservation of low dark current of InGaAs photodiodes after NH3/HF etch with a BCB passivation layer
Schmidt, D.; Trommer, D. | Conference Paper |
| 2000 | Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S. | Conference Paper |
| 1999 | Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J. | Journal Article |
| 1999 | Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1998 | InGaAs photodetector with integrated biasing network for mm-wave applications
Trommer, D.; Umbach, A.; Unterborsch, G. | Conference Paper |
| 1996 | Carrier capture and escape times in In(0,35)Ga(0,65)As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Journal Article |
| 1996 | MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A. | Conference Paper |
| 1995 | Herstellung und Charakterisierung von GaAs/In(x)Ga(1-x)As/GaAs(1-y)Sb(y) Heterostrukturen
Matthias, P. | Thesis |
| 1995 | Kurzzeitspektroskopie optisch modulierter Hochgeschwindigkeits-Laserdioden
Sutter, D.H. | Thesis |
| 1995 | Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes
Schönfelder, A.; Weisser, S.; Larkins, E.C.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Czotscher, K.; Rosenzweig, J. | Conference Paper |
| 1994 | 12 GHz to 64 GHz continuous frequency tuning in selfpulsating 1.55 mu m quantum well DFB lasers
Feiste, U.; Möhrle, M.; Sartorius, B.; Hörer, J.; Löffler, R. | Conference Paper |
| 1994 | Charakterisierung optoelektronischer Bauelemente aus p-i-n Halbleiterheterostrukturen
Bender, G. | Dissertation |
| 1994 | MBE growth of In0.35Ga0.65As/GaAs MQWs for high-speed lasers - relaxation limits and factors influencing dislocation glide
Larkins, E.C.; Baeumler, M.; Wagner, J.; Bender, G.; Herres, N.; Maier, M.; Rothemund, W.; Fleissner, J.; Jantz, W.; Ralston, J.D.; Flemig, G.; Brenn, R. | Conference Paper |
| 1993 | A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G. | Journal Article |
| 1993 | MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structures.
Larkins, E.C.; Rothemund, W.; Maier, M.; Wang, Z.M.; Ralston, J.D.; Jantz, W. | Journal Article |
| 1992 | Coherent receiver front-end module including a polarization diversity waveguide OIC and a high-speed InGaAs twin-dual p-i-n photodiode OEIC both based on InP
Hamacher, M.; Heidrich, H.; Kruger, U.; Stenzel, R.; Bauer, J.G.; Albrecht, H. | Journal Article |
| 1992 | Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures.
Schweizer, T.; Ganser, P.; Köhler, K. | Journal Article |
| 1991 | Optisch detektierte magnetische Resonanz von III-V Halbleitern und optisches Pumpen and III-V Halbleiterstrukturen
Kunzer, M. | Thesis |
| 1991 | A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering
Stareev, G.; Umbach, A.; Fidorra, F.; Roehle, H. | Conference Paper |
| 1990 | Superior microwave performance of InGaAs JFETs grown by MBE
Trommer, D.; Umbach, A.; Passenburg, W.; Mekonnen, G.; Unterborsch, G. | Journal Article |
| 1987 | Dielectrics for passivation of planar InP/InGaAs diodes
Unterborsch, G.; Bach, H.G.; Schmitt, F.; Schmidt, R.; Schlaak, W. | Conference Paper, Journal Article |