Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Influence of the surface potential on electrical properties of Al(x)Ga(1-x)N/GaN heterostructures with different Al-content: Effect of growth method
Köhler, K.; Müller, S.; Aidam, R.; Waltereit, P.; Pletschen, W.; Kirste, L.; Menner, H.; Bronner, W.; Leuther, A.; Quay, R.; Mikulla, M.; Ambacher, O.; Granzner, R.; Schwierz, F.; Buchheim, C.; Goldhahn, R.
Journal Article
2010InP-based unipolar heterostructure diode for vertical integration, level shifting, and small signal rectification
Prost, W.; Zhang, D.; Münstermann, B.; Feldengut, T.; Geitmann, R.; Poloczek, A.; Tegude, F.-J.
Journal Article
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper
2010Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
Hofstetter, D.; Giorgetta, F.R.; Baumann, E.; Yang, Q.K.; Manz, C.; Köhler, K.
Conference Paper, Journal Article
2009Growth and electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content
Köhler, K.; Müller, S.; Waltereit, P.; Kirste, L.; Menner, H.; Bronner, W.; Quay, R.
Journal Article
2009Large-area terahertz emitters based on GaInAsN
Peter, F.; Winnerl, S.; Schneider, H.; Helm, M.; Köhler, K.
Conference Paper
2009Optical and mass spectrometric investigation of the interaction of hydrogen with nitrogen In (In)GaAsN layers
Alt, H.C.; Messerer, P.; Köhler, K.; Riechert, H.; Kirste, L.
Conference Paper
2009Quantum cascade detectors
Giorgetta, F.R.; Baumann, E.; Graf, M.; Yang, Q.K.; Manz, C.; Köhler, K.; Beere, H.E.; Ritchie, D.A.; Linfield, E.; Davies, A.G.; Fedoryshyn, Y.; Jäckel, H.; Fischer, M.; Faist, J.; Hofstetter, D.
Journal Article
2009The role of gated and ungated plasma in THz detection by field effect transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Conference Paper
2008The response rate of room temperature terahertz InGaAs-based bow-tie detector with broken symmetry
Kasalynas, I.; Seliuta, D.; Simniskis, R.; Tamosiunas, V.; Vaicikauskas, V.; Grigelionis, I.; Nedzinskas, R.; Köhler, K.; Valusis, G.
Conference Paper
2008Terahertz detection by the entire channel of high electron mobility transistors
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Knap, W.; Grynberg, M.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Caban, P.; Strupinski, W.
Journal Article, Conference Paper
2008THz detection by field-effect transistors in magnetic fields: Shallow water vs. deep water mechanism of electron plasma instability
Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Köhler, K.; Valusis, G.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.
Journal Article
2007The two-dimensional bigradient effect and its application for GHz-THz sensing
Seliuta, D.; Gruzinskis, V.; Tamosiunas, V.; Juozapavicius, A.; Kasalynas, I.; Asmontas, S.; Valusis, G.; Steenson, P.; Chow, W.-H.; Harrison, P.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Conference Paper
2006Mg doping profile in III-N light emitting diodes in close proximity to the active region
Köhler, K.; Perona, A.; Maier, M.; Wiegert, J.; Kunzer, M.; Wagner, J.
Journal Article
2006New trends in terahertz electronics
Tamosiunas, V.; Seliuta, D.; Juozapavicius, A.; Sirmulis, E.; Valusis, G.; Fatimy, A. el; Meziani, Y.; Dyakonova, N.; Lusakowski, J.; Knap, W.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2006Silicon lens-coupled bow-tie InGaAs-based broadband terahertz sensor operating at room temperature
Seliuta, D.; Kasalynas, I.; Tamosiunas, V.; Balakauskas, S.; Martunas, Z.; Asmontas, S.; Valusis, G.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2005Broad band THz sensing by 2DEG bow-tie-type diodes
Valusis, G.; Seliuta, D.; Tamosiunas, V.; Sirmulis, E.; Balakauskas, S.; Gradauskas, J.; Suziedelis, A.; Asmontas, S.; Anbinderis, T.; Narkunas, A.; Papsujeva, I.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article, Conference Paper
2005Control of the Mg doping profile in III-N light-emitting diodes and its effect on the elecroluminescence efficiency
Köhler, K.; Stephan, T.; Perona, A.; Wiegert, J.; Maier, M.; Kunzer, M.; Wagner, J.
Journal Article
2005In-Plane shaped GaAS/AlGaAS modulation-doped structures: Physics and applications for THz/SUBTHz sensing
Asmontas, S.; Juozapavicius, A.; Seliuta, D.; Sirmulis, E.; Tamosiunas, V.; Valusis, G.; Köhler, K.
Book Article
2004Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers
Seliuta, D.; Sirmulis, E.; Tamosiunas, V.; Balakauskas, S.; Asmontas, S.; Suziedelis, A.; Gradauskas, J.; Valusis, G.; Lisauskas, A.; Roskos, H.G.; Köhler, K.
Journal Article
2004Epitaxy and characterisation of dilute III-As(1-y)N(y) on GaAs and InP
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, M.; Kirste, L.
Conference Paper, Journal Article
2004Influence of Mg doping profile on the electroluminescence properties of GaInN multiple quantum well light emitting diodes
Stephan, T.; Köhler, K.; Maier, M.; Kunzer, M.; Schlotter, P.; Wagner, J.
Conference Paper
2004Microwave sensor based on modulation-doped GaAs/AlGaAs structure
Juozapavicius, A.; Ardaravicius, L.; Suziedelis, A.; Kozic, A.; Gradauskas, J.; Kundrotas, J.; Seliuta, D.; Sirmulis, E.; Asmontas, S.; Valusis, G.; Roskos, H.G.; Köhler, K.
Journal Article, Conference Paper
2004Optical and acoustic intersubband plasmons
Rösch, M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
2004The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L.
Journal Article
2003AlGaN/GaN HEMTs on silicon carbide substrates for microwave power operation
Lossy, R.; Chaturvedi, N.; Heymann, P.; Köhler, K.; Müller, S.; Würfl, J.
Conference Paper
2003Asymmetrically - shaped diodes for microwave - submillimeter sensing
Asmontas, S.; Ardavicius, L.; Balakauskas, S.; Gradauskas, J.; Kozic, A.; Kundrotas, J.; Köhler, K.; Roskos, H.G.; Sachs, R.; Suziedelis, A.; Seliuta, D.; Sirmulis, E.; Valusis, G.
Conference Paper
2003Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M.
Dissertation
2003Multiwafer epitaxy of GaN/AlGaN heterostructures for power applications
Köhler, K.; Müller, S.; Rollbühler, N.; Kiefer, R.; Quay, R.; Weimann, G.
Conference Paper
2003Peculiarities of excitonic photoluminescence of selectively-doped GaAs/Al(0.25)Ga(0.75)As structures
Kundrotas, J.; Asmontas, S.; Suziedelis, A.; Valusis, G.; Roskos, H.G.; Köhler, K.
Journal Article
2003THz dielectric response of a moving electron gas
Sachs, R.; Banyai, L.; Mohler, E.; Köhler, K.; Roskos, H.G.
Conference Paper
2002GHz-THz detection by asymmetrically-shaped GaAs: Bulk material versus nanostructures
Valusis, G.; Sachs, R.; Roskos, H.G.; Suziedelis, A.; Gradauskas, J.; Asmontas, S.; Sirmulis, E.; Köhler, K.
Journal Article
2001Alpha particle induced luminescence from multiple quantum wells
Kundrotas, J.; Dargys, A.; Granja, C.; Köhler, K.; Pospísil, S.; Remeikis, V.; Smith, K.M.
Conference Paper
2000GaN static induction transistor fabrication
Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.
Conference Paper
2000Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000Technology and performance of AlGaN/GaN HEMTs fabricated on 2-inch epitaxy for microwave power applications
Lossy, R.; Hilsenbeck, J.; Würfl, J.; Köhler, K.; Obloh, H.
Conference Paper
1998Coupled cyclotron resonance transitions of bilayer 2DEG systems in GaAs
Hu, C.M.; Batke, E.; Shen, S.C.; Köhler, K.; Ganser, P.
Journal Article
1998Investigation of SiGe/Si-heterostructures with high resolution X-ray diffraction methods
Frohberg, K.; Wehner, B.; Trui, B.; Wolf, K.; Paufler, P.; Kück, H.
Conference Paper
1998Untersuchungen an SiGe/Si-Heterostrkturen mit Röntgenmethoden
Frohberg, K.
Thesis
1997Coherent signature of differential transmission signals in semiconductors: Theory and experiment
Bartels, G.; Cho, G.C.; Dekorsy, T.; Kurz, H.; Stahl, A.; Köhler, K.
Journal Article
1997Excitonic emisssion of THz radiation. Experimental evidence of the shortcomings of the Bloch equation method
Haring Bolivar, P.; Wolter, F.; Müller, A.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Journal Article
1997Molecular beam epitaxy of vertically compact Al(x)Ga(1-x)As/GaAs laser-HEMT structures for monolithic integration
Gaymann, A.; Schaub, J.; Bronner, W.; Grün, N.; Hornung, J.; Köhler, K.
Journal Article
1997Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers
Wörner, A.; Westphäling, R.; Kalt, H.; Köhler, K.
Journal Article
1996Bloch oscillations of excitonic and continuum states in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Köhler, K.; Kurz, H.
Conference Paper
1996Bloch oscillations. Coherent control of wave packet dynamics in superlattices
Lyssenko, V.G.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.; Dignam, M.M.
Conference Paper
1996Coherent exciton dynamics as a function of quantum-well number
Weber, D.; Feldmann, J.; Göbel, E.O.; Stroucken, T.; Knorr, A.; Koch, S.W.; Citrin, D.S.; Köhler, K.
Journal Article
1996Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/GaAs heterostructures
Müller, S.; Weyer, J.L.; Köhler, K.; Jantz, W.; Frigeri, C.
Conference Paper
1996Dephasing and selection rules of interband and intraband polarisations in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1996Dephasing dynamics of wave packets in semiconductor superlattices
Valusis, G.; Lyssenko, V.G.; Klatt, D.; Löser, F.; Pantke, K.-H.; Leo, K.; Köhler, K.
Conference Paper
1996Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon
Vaupel, H.; Thomas, P.; Kühn, O.; May, V.; Maschke, K.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1996Exciton dephasing in quantum wells. Influence of spectral fluctuation processes
Löser, F.; Neuber, A.; Klatt, D.; Lyssenko, V.G.; Pantke, K.-H.; Leo, K.; Glutsch, S.; Köhler, K.
Conference Paper
1996Femtosecond coherent fields induced by many-particle correlations in transient four-wave mixing
Schäfer, W.; Kim, D.-S.; Shah, J.; Damen, T.C.; Cunningham, J.E.; Goossen, K.W.; Pfeiffer, L.N.; Köhler, K.
Journal Article
1996Field enhanced blockade of the confined energy levels in nanometer scale pillar arrays
Alphenaar, B.W.; Durrani, Z.A.K.; Wagner, M.; Köhler, K.
Journal Article
1996Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum weels under hydrostatic pressure
Brunthaler, G.; Penn, C.; Suski, T.; Wisniewski, P.; Litwin-Staszewska, E.; Köhler, K.
Journal Article
1996Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Journal Article
1996Intersubband plasmon-phonon modes of a quasi two-dimensional electron gas in GaAs
Friedrich, T.; Rösch, M.; Latussek, V.; Batke, E.; Köhler, K.; Ganser, P.
Conference Paper
1996Metal-non-metal transition at the crossover from antidots to quantum dots
Lütjering, G.; Weiss, D.; Tank, R.W.; Klitzing, K. von; Hülsmann, A.; Jakobus, T.; Köhler, K.
Journal Article
1996Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure. Tuning of the remote-charge correlations
Wisniewski, P.; Suski, T.; Litwin-Staszewska, E.; Brunthaler, G.; Köhler, K.
Journal Article
1996Molecular beam epitaxy of GaAs/Al(x)Ga(1-x)As/In(y)Ga(1-y)As heterostructures for opto-electronic devices. Control of growth parameters
Köhler, K.
Journal Article
1996Nonlinear optical studies of Bloch oscillations
Leisching, P.; Beck, W.; Kurz, H.; Köhler, K.; Schäfer, W.; Leo, K.
Journal Article
1996Optical study of Bloch oscillations in superlattices
Cho, G.C.; Dekorsy, T.; Bakker, H.J.; Kohl, A.; Opitz, B.; Köhler, K.; Kurz, H.
Conference Paper
1996Photon drag spectroscopy of a two-dimensional electron system
Sigg, H.; Son, P. van; Köhler, K.
Journal Article
1996Quantum coherence of continuum states in the valence band of GaAs quantum wells
Dekorsy, T.; Kim, A.M.T.; Cho, G.C.; Hunsche, S.; Bakker, H.J.; Kurz, H.; Chuang, S.L.; Köhler, K.
Journal Article
1996Time-resolved study of intervalence band thermalization in a GaAs quantum well
Kim, A.M.T.; Hunsche, S.; Dekorsy, T.; Kurz, H.; Köhler, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Baumberg, J.J.; Heberle, A.P.; Köhler, K.; Ploog, K.
Journal Article
1996Ultrafast coherent carrier control in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.; Ploog, K.
Conference Paper
1996Ultrafast hole-lattice thermalization in GaAs quantum wells
Hunsche, S.; Kim, A.M.T.; Dekorsy, T.; Kurz, H.; Köhler, K.
Conference Paper
1995Bloch oscillations in semiconductor superlattices
Roskos, H.G.; Waschke, C.; Victor, K.; Köhler, K.; Kurz, H.
Journal Article
1995Coherent dynamics of excitonic and biexcitonic wave packets in semiconductor superlattices
Leisching, P.; Ott, R.; Bolivar, P.H.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Journal Article
1995Coherent exciton-photon dynamics in single, double, and quintuple quantum wells.
Weber, D.; Feldmann, J.; Göbel, E.O.; Citrin, D.S.; Köhler, K.
Journal Article
1995External-field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing
Beck, W.; Leisching, P.; Kurz, H.; Schaefer, W.; Leo, K.; Köhler, K.
Journal Article
1995Herstellung und Charakterisierung von GaAs/In(x)Ga(1-x)As/GaAs(1-y)Sb(y) Heterostrukturen
Matthias, P.
Thesis
1995Mobility enhancement due to spatial correlation of remote impurity charges in delta-doped AlGaAs/GaAs heterostructure
Suski, T.; Brunthaler, G.; Stöger, G.; Köhler, K.; Wisniewski, P.
Conference Paper
1994Band discontinuitres in the (Pb, Eu)Se system determined by frequency-dependent admittance analysis
Xu, J.; Steiner, K.; Tacke, M.
Journal Article
1994Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl
Shi, Z.; Lambrecht, A.; Tacke, M.
Journal Article
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Conference Paper
1994Unintentional As incorporation in molecular beam epitaxially grown InAs/AlSb/GaSb heterostructures
Schmitz, J.; Wagner, J.; Maier, M.; Obloh, H.; Koidl, P.; Ralston, J.D.
Journal Article
1993Observation of Bloch oscillations in a semiconductor superlattice
Haring Bolivar, P.; Leisching, P.; Leo, K.; Shah, J.; Köhler, K.
Book Article
1992Controle optico de um oscilador de microondas empregando transistores HEMT.
Bangert, A.; Herczfeld, P.R.; Romero, M.A.
Conference Paper
1992Dissipative dynamics of an electronic wavepacket in a semiconductor double well potential.
Schulze, A.; Meier, T.; Thomas, P.; Luo, M.S.C.; Schäfer, W.; Chuang, S.L.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schmitt-Rink, S.; Shah, J.
Journal Article
1992Observation of Bloch oscillations in a semiconductor superlattice
Leo, K.; Bolivar, P.H.; Brüggemann, F.; Schwedler, R.; Köhler, K.
Journal Article
1992Optically induced carrier transfer in silicon anti-modulation-doped GaAs/Al(x)Ga(1-x)As single quantum wells
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Köhler, K.
Journal Article
1992Polarization dependence of heavy- and light-hole quantum beats
Schmitt-Rink, S.; Bennhardt, D.; Heuckeroth, V.; Thomas, P.; Haring, P.; Maidorn, G.; Bakker, H.; Leo, K.; Kim, D.-S.; Shah, J.; Köhler, K.
Journal Article
1992Quantum beats versus polarization interference: An experimental distinction
Koch, M.; Feldmann, J.; Plessen, G. von; Göbel, E.O.; Thomas, P.; Köhler, K.
Journal Article
1992Resonant electron and hole tunneling between GaAs quantum wells
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Time-resolved four-wave mixing in GaAs/AlAs quantum well structures.
Koch, M.; Feldmann, J.; Plessen, G. von; Meier, T.; Schulze, A.; Thomas, P.; Göbel, E.O.; Köhler, K.; Ploog, K.; Schmitt-Rink, S.
Journal Article
1992Tunneling between quantum wells.
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Conference Paper
1992Tunneling through single AlGaAs barriers
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Journal Article
1992Unusually slow temporal evolution of femtosecond four-wave-mixing signals in intrinsic GaAs quantum wells: Direct evidence for the dominance of interaction effects
Schäfer, W.; Jahnke, F.; Damen, T.C.; Kim, D.-S.; Köhler, K.; Schmitt-Rink, S.; Shah, J.
Journal Article
1991Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application
Bachem, K.H.; Hornung, J.; Hülsmann, A.; Ganser, P.; Köhler, K.; Maier, M.
Conference Paper
1991Coherent oscillations of a wave packet in a semiconductor double-quantum-well structure
Damen, T.C.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Schmitt-Rink, S.; Shah, J.
Conference Paper
1991Competition between tunneling and exciton formation for photoexcited carriers in asymmetric double quantum wells.
Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.
Conference Paper
1991Materials and device properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors -0 smaller than x smaller than 0.5.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Journal Article
1991Measurement of the exciton-formation time and the electron- and hole-tunneling times in a double-quantum-well structure
Strobel, R.; Eccleston, R.; Kuhl, J.; Köhler, K.
Journal Article
1991Optisch detektierte magnetische Resonanz von III-V Halbleitern und optisches Pumpen and III-V Halbleiterstrukturen
Kunzer, M.
Thesis
1991Properties of pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors - 0 is smaller than x smaller than 0.5.
Schweizer, T.; Ganser, P.; Hülsmann, A.; Tasker, P.; Köhler, K.
Conference Paper
1991Resonant tunneling in double quantum wells - the cases of strong and weak collisions.
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Göbel, E.O.; Köhler, K.
Conference Paper
1991Subpicosecond four-wave mixing in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.
Journal Article
1991Terahertz absorption between split subbands in coupled Quantum Wells.
Cunningham, J.; Köhler, K.; Nuss, M.C.; Roskos, H.; Shah, J.; Tell, B.
Conference Paper
1990Electron and hole tunneling transfer times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells under electric field.
Nido, M.; Alexander, M.G.W.; Rühle, W.E.; Köhler, K.
Conference Paper
1990Electron paramagnetic resonance of the shallow Si donor in indirect GaAs/AlxGa1-xAs heterostructures.
Wilkening, W.; Kaufmann, U.
Conference Paper
1990Elektrische und optische Eigenschaften von ErAs und ErAs/GaAs Vielfachschichten hergestellt mit MBE auf GaAs
Ralston, J.D.; Fuchs, F.; Hiesinger, P.; Schneider, J.; Herres, N.; Ennen, H.; Wennekers, P.
Conference Paper
1990Femtosecond transient-grating experiments in quantum wells
Schmitt-Rink, S.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Shah, J.
Conference Paper
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Journal Article
1990Materials and device characteristics of single and double sided delta-doped pseudomorphic InxGa1-xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors.
Schweizer, T.; Hülsmann, A.; Tasker, P.; Ganser, P.; Köhler, K.
Conference Paper
1990A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Harris, C.; Monemar, B.; Kalt, H.; Schweizer, T.; Köhler, K.
Conference Paper
1990Subpicosecond transient four-wave-mixing experiments. A novel method to study resonant tunneling.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Journal Article
1989Strained-layer InGaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy.
Offsey, S.D.; Schaff, W.J.; Tasker, P.J.; Eastman, L.F.; Ennen, H.
Journal Article
1988Electrical detection of nuclear magnetic resonance in GaAs-Al(x)Ga(1-x)As heterostructures
Schneider, J.; Dobers, M.; Weimann, G.; Ploog, K.; Klitzing, K. von
Journal Article
1988Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1-XEuXSe.
Norton, P.R.; Böttner, H.; Lambrecht, A.; Spanger, B.; Tacke, M.
Journal Article
1988Overhauser-shift of the ESR in the two-dimensional electron gas of GaAs-AlGaAs-heterostructures
Schneider, J.; Dobers, M.; Weimann, G.; Ploog, K.; Klitzing, K. von
Conference Paper
1987On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction.
Rosman, R.; Norton, P.; Bachem, K.H.; Katzir, A.; Preier, H.M.
Journal Article
1986Pb1-XEuXSe for IR device applications
Norton, P.; Bachem, K.H.; Tacke, M.
Conference Paper