Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Linear temperature sensors in high-voltage GaN-HEMT power devices
Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Wespel, M.; Meder, Dirk; Mikulla, Michael; Quay, Rüdiger; Ambacher, O.
Conference Paper
2014Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
Weiss, B.; Reiner, R.; Quay, R.; Waltereit, P.; Müller, S.; Benkhelifa, F.; Mikulla, M.; Schlechtweg, M.; Ambacher, O.
Conference Paper
2010GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
Journal Article
2000Complementary HFETs on GaAs with 0.2µm gate length
Leuther, A.; Thiede, A.; Köhler, K.; Jakobus, T.; Weimann, G.
Conference Paper
1997Edge-phase-shifting lithography for sub 0.3 mu m T-gates
Hülsmann, A.; Becker, F.; Hornung, J.; Köhler, D.; Schneider, J.
Conference Paper
1996W-band MMIC VCO with a large tuning range using a pseudomorphic HFET
Bangert, A.; Schlechtweg, M.; Lang, M.; Haydl, W.; Bronner, W.; Fink, T.; Köhler, K.; Raynor, B.
Conference Paper
1995State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications
Diehl, R.; Schlechtweg, M.
Conference Paper
1991A 2.5 ns 8x8-b parallel multiplier using 0.5 mym GaAs/GaAlAs heterostructure field effect transistors
Hurm, V.; Nowotny, U.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article