Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, Michael; Baeumler, Martina; Brueckner, Peter; Kemmer, Tobias; Konstanzer, Helmer; Graff, Andreas; Simon-Najasek, Michél; Quay, Rüdiger
Journal Article
2018High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Leone, Stefano; Godejohann, Birte-Julia; Brueckner, Peter; Kirste, Lutz; Manz, Christian; Swoboda, Marko; Beyer, Christian; Richter, Jan; Quay, Rüdiger
Conference Paper
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Conference Paper
2017High resolution physical analysis of ohmic contact formation at GaN-HEMT devices
Graff, A.; Simon-Najasek, M.; Altmann, F.; Kuzmik, J.; Gregušová, D.; Haščík, Š.; Jung, H.; Baur, T.; Grünenpütt, J.; Blanck, H.
Journal Article
2016Experimental analysis of the gate-leakage-induced failure mechanism in GaN HEMTs
Unger, C.; Mocanu, M.; Pfost, M.; Waltereit, P.; Reiner, R.
Conference Paper
2016Internally-packaged-matched continuous inverse class-FI wideband GaN HPA
Carrubba, V.; Maroldt, S.; Ture, E.; Udeh, U.; Mußer, M.; Bronner, W.; Quay, R.; Ambacher, O.
Conference Paper
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Conference Paper
2016Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications
Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.
Conference Paper
2016Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss, S.A.; Kilian, S.; Schwaiger, S.; Noll, S.; Daves, W.; Ambacher, O.
Journal Article, Conference Paper
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Conference Paper
2016Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
Weiss, B.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; Sepahvand, A.; Maksimovic, D.
Conference Paper
2015Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Dammann, M.; Baeumler, M.; Brückner, P.; Bronner, W.; Maroldt, S.; Konstanzer, H.; Wespel, M.; Quay, R.; Mikulla, M.; Graff, A.; Lorenzini, M.; Fagerlind, M.; Wel, P.J. van der; Roedle, T.
Journal Article
2015A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.
Conference Paper
2015High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
Wespel, M.; Dammann, M.; Polyakov, V.; Reiner, R.; Waltereit, P.; Weiss, B.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2015Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology
Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.
Conference Paper
2015Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications
Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.
Conference Paper
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Conference Paper
2015Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
Hahn, H.; Benkhelifa, Fouad; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.
Journal Article
2014Manga: Manufacturable GaN SiC substates and GaN Epi-Wafer supply chain
Mikulla, M.; Stockmeier, M.; Magnussen, B.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Conference Paper
2014Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
Mikulla, M.; Storm, S.; Henelius, N.; Poisson, M.-A.; Zanoni, E.; Kuball, M.
Conference Paper
2014A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.
Conference Paper
2014A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage
Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.
Conference Paper
2013Compact 110-170 GHz amplifier in 50 nm mHEMT technology with 25 dB gain
Merkle, T.; Koch, S.; Leuther, A.; Seelmann-Eggebert, M.; Massler, H.; Kallfass, I.
Conference Paper
2013Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65%
Waltereit, P.; Müller, S.; Kirste, L.; Prescher, M.; Storm, S.; Weber, A.; Schauwecker, B.; Hosch, M.; Splettstößer, J.
Conference Paper
2013High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
Mikulla, M.; Leuther, A.; Brueckner, P.; Schwantuschke, D.; Tessmann, A.; Schlechtweg, M.; Ambacher, O.; Caris, M.
Conference Paper
2012Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2012GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O.
Journal Article
2012Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O.
Journal Article, Conference Paper
2011Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O.
Journal Article, Conference Paper
2011From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.
Conference Paper
2010AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O.
Journal Article
2010Device and design optimization for AlGaN/GaN X-band-power-amplifiers with high efficiency
Kühn, J.; Raay, F. van; Quay, R.; Kiefer, R.; Mikulla, M.; Seelmann-Eggebert, M.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; Thumm, M.
Journal Article
2010GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O.
Journal Article
2010High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O.
Conference Paper
2010High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.
Journal Article, Conference Paper
2010Search for a suitable ohmic metallization scheme to GaN/AlGaN heterostructures for sub-micron devices
Kolaklieva, L.; Kakanakov, R.; Chitanov, V.; Dulgerova, P.; Cimalla, V.
Conference Paper
2010A versatile and cryogenic mHEMT-model including noise
Seelmann-Eggebert, M.; Schäfer, F.; Leuther, A.; Massler, H.
Conference Paper
2009Composition and interface chemistry dependence in ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions
Kolaklieva, L.; Kakanakov, R.; Stefanov, P.; Cimalla, V.; Maroldt, S.; Ambacher, O.; Tonisch, K.; Niebelschütz, F.
Conference Paper, Journal Article
2009Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P.
Conference Paper
2009High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O.
Conference Paper
2009High-performance MMICs and high-speed mixed-signal ICs based on III/V HEMT and HBT technology for sensors and communication
Schlechtweg, M.; Tessmann, A.; Kallfass, I.; Leuther, A.; Weber, R.; Chartier, S.; Driad, R.; Makon, R.E.; Hurm, V.; Massler, H.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.; Ambacher, O.; Kuri, M.
Conference Paper
2009Reliability of AlGaN/GaN HEMTs under DC- and RF-operation
Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.
Conference Paper
2008Efficient AlGaN/GaN HEMT power amplifiers
Quay, R.; Raay, F. van; Kühn, J.; Kiefer, R.; Waltereit, P.; Zorcic, M.; Musser, M.; Bronner, W.; Dammann, M.; Seelmann-Eggebert, M.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.; Thorpe, J.; Riepe, K.; Rijs, F. van; Saad, M.; Harm, L.; Rödle, T.
Conference Paper
2008GaN MMIC based T/R-module front-end for X-band applications
Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Mikulla, M.
Conference Paper
2008High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G.
Journal Article
2008Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P.
Journal Article
2008Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R.
Conference Paper
2008A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al.
Conference Paper
200750 nm MHEMT technology for G- and H-band MMICs
Leuther, A.; Tessmann, A.; Dammann, M.; Schwörer, C.; Schlechtweg, M.; Mikulla, M.; Lösch, R.; Weimann, G.
Conference Paper
2007GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
2007Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.
Conference Paper
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Conference Paper
200620W GaN HPAs for next generation X-band T/R-modules
Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R.
Conference Paper
2006Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2006Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R.
Conference Paper
2006GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G.
Journal Article
2006Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W.
Conference Paper
2006Load pull characterization of GaN/AlGaN HEMTs
Schuberth, C.; Arthaber, H.; Mayer, M.; Magerl, G.; Quay, R.; Raay, F. van
Conference Paper
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Journal Article, Conference Paper
2005A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology
Schwörer, C.; Campos-Roca, Y.; Leuther, A.; Tessmann, A.; Seelmann-Eggebert, M.; Massler, H.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band
Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G.
Conference Paper
2005Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L.
Journal Article
2005High gain 110-GHz low noise amplifier MMICs using 120-nm metamorphic HEMTs and coplanar waveguides
Bessemoulin, A.; Fellon, P.; Gruenenpuett, J.; Massler, H.; Reinert, W.; Kohn, E.; Tessmann, A.
Conference Paper
2005High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G.
Conference Paper
2005Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.
Conference Paper
2005A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
Raay, F. van; Quay, R.; Kiefer, R.; Fehrenbach, W.; Bronner, W.; Kuri, M.; Benkhelifa, F.; Massler, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2005Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R.
Conference Paper
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Conference Paper
2005Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2004Frontiers of III-V compounds and devices
Würfl, J.; Schlechtweg, M.
Conference Paper
2004Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technology
Schlechtweg, M.; Leuther, A.; Tessmann, A.; Schwörer, C.; Massler, H.; Reinert, W.; Lang, M.; Nowotny, U.; Kappeler, O.; Walther, M.; Lösch, R.
Conference Paper
2004Millimeter-wave circuits based on advanced metamorphic HEMT technology
Tessmann, A.; Leuther, A.; Schwörer, C.; Massler, H.; Reinert, W.; Walther, M.; Lösch, R.; Schlechtweg, M.
Conference Paper
2003108 GHz dynamic frequency divider in 100 nm metamorphic enhancement HEMT technology
Kappeler, O.; Leuther, A.; Benz, W.; Schlechtweg, M.
Journal Article
2003AlGaN/GaN HEMTs on SiC: Towards power operation at V-band
Quay, R.; Tessmann, A.; Kiefer, R.; Weber, R.; Raay, F. van; Kuri, M.; Riessle, M.; Massler, H.; Müller, S.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.
Conference Paper
2003High-speed III-V HEMT and HBT devices and circuits for ETDM transmission beyond 80 Gbit/s
Quay, R.; Schlechtweg, M.; Leuther, A.; Lang, M.; Nowotny, U.; Kappeler, O.; Benz, W.; Ludwig, M.; Leich, M.; Driad, R.; Bronner, W.; Weimann, G.
Conference Paper
2003Integrated circuits based on 300 GHz f(T) metamorphic HEMT technology for millimeter-wave and mixed-signal applications
Schlechtweg, M.; Tessmann, A.; Leuther, A.; Schwörer, C.; Lang, M.; Nowotny, U.; Kappeler, O.
Conference Paper
2003Low-noise W-band amplifiers for radiometer applications using a 70nm metamorphic HEMT technology
Schwörer, C.; Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schlechtweg, M.
Conference Paper
2003Metamorphic HEMT technologies for millimeter-wave low-noise applications
Tessmann, A.; Leuther, A.; Massler, H.; Reinert, W.; Schwörer, C.; Dammann, M.; Walther, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2003Reliability and degradation mechanism of AlGaAs/InGaAs and InAlAs/InGaAs HEMTs
Dammann, M.; Leuther, A.; Benkhelifa, F.; Feltgen, T.; Jantz, W.
Journal Article
200258-82 GHz 4:1 dynamic frequency divider using 100nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Raynor, B.; Schlechtweg, M.
Journal Article
200266 GHz 2:1 static frequency divider using 100 nm metamorphic enhancement HEMT technology
Lang, M.; Leuther, A.; Benz, W.; Nowotny, U.; Kappeler, O.; Schlechtweg, M.
Journal Article
2002AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G.
Conference Paper
2002AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G.
Conference Paper
2002Coplanar high performance MMICs in MHEMT and PHEMT technology for applications up to 100 GHz
Schwörer, C.; Tessmann, A.; Leich, M.; Leuther, A.; Kudszus, S.; Bessemoulin, A.; Schlechtweg, M.
Conference Paper
2002Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R.
Conference Paper
2002Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K.
Journal Article
2002Potential of metamorphic HEMT with 0.25µm refractory metal gate for power application in Ka-Band
Benkhelifa, F.; Quay, R.; Lösch, R.; Schäuble, K.; Dammann, M.; Mikulla, M.; Weimann, G.
Conference Paper
2002Reliability of metamorphic HEMTs for power applications
Dammann, M.; Benkhelifa, F.; Meng, M.; Jantz, W.
Journal Article
2001Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance
Leven, A.; Hurm, V.; Reuter, R.; Rosenzweig, J.
Journal Article
2001High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode
Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
2001High performance metamorphic HEMT with 0.25 µm refractory metal gate on 4´´ GaAs substrate
Benkhelifa, F.; Chertouk, M.; Dammann, M.; Massler, H.; Walther, M.; Weimann, G.
Conference Paper
2001High Speed Circuits based on HEMT Technology for Optical/Wireless Communication and Sensor Systems
Schlechtweg, M.
Conference Paper
2001Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Journal Article
2001A review of modeling issues for RF heterostructure device simulation
Quay, R.; Schultheis, R.; Kellner, W.; Palankovski, V.; Selberherr, S.
Conference Paper
200040 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier
Leven, A.; Hurm, V.; Bronner, W.; Köhler, K.; Walcher, H.; Kiefer, R.; Fleißner, J.; Rosenzweig, J.; Schlechtweg, M.
Conference Paper
200094/47-GHz regenerative frequencydivider MMIC with low conversion loss
Kudszus, S.; Haydl, W.; Neumann, M.; Schlechtweg, M.
Journal Article
2000A 94GHz HEMT-oscillator using high order subharmonic synchronization
Kudszus, S.; Berceli, T.; Tessmann, A.; Neumann, M.; Haydl, W.
Conference Paper
2000Fully integrated 94-GHz subharmonic injection-locked PLL circuit
Kudszus, S.; Neumann, M.; Berceli, T.; Haydl, W.
Journal Article
2000Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S.
Conference Paper
2000Metamorphic Devices
Hülsmann, A.; Benkhelifa, F.; Bronner, W.; Chertouk, M.; Hurm, V.; Köhler, K.; Leuther, A.; Walther, M.; Weimann, G.
Conference Paper
2000Optical millimeter wave generation utilizing a subharmonic reference
Berceli, T.; Kudszus, S.; Schlechtweg, M.; Zólomy, A.; Jaró, G.; Marozsák, T.; Udvary, E.
Conference Paper
2000Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.
Conference Paper
2000Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.
Conference Paper
2000W-Band HEMT-Oscillator MMICs Using Subharmonic Injection Locking
Kudszus, S.; Berceli, T.; Tessmann, A.; Neumann, M.; Haydl, W.
Journal Article
199994/47 GHz regenerative frequency divider MMIC with low conversion loss
Kudszus, S.; Haydl, W.H.; Neumann, M.; Hülsmann, A.
Conference Paper
1999Analytical, scaleable large signal noise model for GaAs and InP MMIC applications
Reuter, R.; Leven, A.
Conference Paper
1999Reliability of passivated 0.15 mu m InAlAs/InGaAs HEMT's with pseudomorphic channel
Dammann, M.; Chertouk, M.; Jantz, W.; Köhler, K.; Schmidt, K.H.; Weimann, G.
Conference Paper
1999Thermal simulations of III/V HEMTs
Quay, R.; Reuter, R.; Grasser, T.; Selberherr, S.
Conference Paper
1999Thermische und elektrische Konzeption von GaAs-HEMTs für Leistungsverstärker bis 80 GHz
Marsetz, W.
Dissertation
1999W-Band HEMT-oscillator with stabilization by phase controlled subharmonic injection locking
Kudszus, S.; Haydl, W.H.; Neumann, M.; Hülsmann, A.
Conference Paper
1998A compact coplanar W-band variable gain amplifier MMIC with wide control range using dual-gate HEMTs
Tessmann, A.; Haydl, W.H.; Krems, T.; Neumann, M.; Massler, H.; Verweyen, L.; Hülsmann, A.; Schlechtweg, M.
Conference Paper
1998A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Lang, M.; Wang, Z.-G.; Thiede, A.; Lienhart, H.; Jakobus, T.; Bronner, W.; Hornung, J.; Hülsmann, A.
Conference Paper
1998Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
Engel, T.; Strittmatter, A.; Passenberg, W.; Seeger, A.; Steingrüber, R.; Mekonnen, G.G.; Unterborsch, G.; Bimberg, D.
Conference Paper
1998Monolithisch integrierte W-Band-Mischer in Koplanartechnik auf der Basis einer pseudomorphen HEMT-Technologie
Verweyen, L.
Dissertation
1998Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Engel, T.; Strittmatter, A.; Passenberg, W.; Umbach, A.; Schlaak, W.; Droge, E.; Seeger, A.; Steingrüber, R.; Mekonnen, G.C.; Unterborsch, G.; Bach, H.-G.; Bottcher, E.H.; Bimberg, D.
Journal Article
1998A new analytical and scaleable noise model for HFET
Reuter, R.; Tegude, F.J.
Conference Paper
1998Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 mu m InAlAs/InGaAs HEMTs
Chertouk, M.; Steinhagen, F.; Massler, H.; Haydl, W.H.; Köhler, K.; Weimann, G.
Journal Article
1998Subharmonically injection locked 94 GHz MMIC HEMT oscillator using coplanar technology
Kudszus, S.; Haydl, W.H.; Neumann, M.; Bangert, A.; Hülsmann, A.
Conference Paper
1998Untersuchungen zum statischen und dynamischen Verhalten schneller Parallel-Analog-Digital-Umsetzer in AlGaAs-HEMT-Technologie
Oehler, F.
Dissertation
1998W-band high gain passivated 0.15 mu m InP-based HEMTs MMIC technology with high thermal stability on InP substrates
Chertouk, M.; Steinhagen, F.; Massler, H.; Dammann, M.; Haydl, W.H.; Köhler, K.; Weimann, G.
Conference Paper
199710 Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Dammann, M.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Ludwig, M.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.
Journal Article
1997Coplanar amplifiers up to W-band using InP-based dual-gate HEMTs
Baeyens, Y.; Zanden, K. van der; Schreurs, D.; Nauwelaers, B.; Hove, M. van; Rossum, M. van; Braunstein, J.
Conference Paper
1997Coplanar switches in PHEMT technology from X- to W-Band
Züfle, K.; Haydl, W.; Massler, H.; Bosch, R.; Schneider, J.
Conference Paper
1997DC Tieftemperaturcharakterisierung von HEMTs
Fischer, S.
Thesis
1997Galliumarsenid-Technologie
Wessel, H.
Journal Article
1997High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs
Lao, Z.; Thiede, A.; Nowotny, U.; Schlechtweg, M.; Hurm, V.; Bronner, W.; Hornung, J.; Rieger-Motzer, M.; Kaufel, G.; Köhler, K.; Hülsmann, A.
Conference Paper
1997Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs
Hurm, V.; Benz, W.; Bronner, W.; Fink, T.; Jakobus, T.; Kaufel, G.; Köhler, K.; Lao, Z.; Leven, A.; Ludwig, M.; Moglestue, C.; Raynor, B.; Rosenzweig, J.; Schlechtweg, M.; Thiede, A.; Weisser, S.
Conference Paper
1997Low-power 20 Gbit/s data decision and 17 GHz static frequency divider ICs with 1.5 V supply voltage
Lao, Z.; Berroth, M.; Thiede, A.; Rieger-Motzer, M.; Kaufel, G.; Seibel, J.; Bronner, W.; Hülsmann, A.; Schneider, J.; Raynor, B.
Journal Article
1997Mixed signal circuits based on a 0.2 mu m gate length AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Schlechtweg, M.; Hurm, V.; Wang, Z.-G.; Lang, M.; Leber, P.; Lao, Z.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Köhler, K.; Bronner, W.; Fink, T.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Schroth, J.; Berroth, M.
Conference Paper
1997Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
Pereiaslavets, B.; Martin, G.H.; Eastman, L.F.; Yanka, R.W.; Ballingall, J.M.; Braunstein, J.; Bachem, K.H.; Ridley, B.K.
Journal Article
1997Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology
Thiede, A.; Bushehri, E.; Nowotny, U.; Rieger-Motzer, M.; Sedler, M.; Bronner, W.; Hornung, J.; Kaufel, G.; Raynor, B.; Schneider, J.
Journal Article
1997Untersuchung von Modellansätzen zur Verifikation von induktiven und resistiven Elementen von HEMT´s
Schleer, S.
Thesis
199620-40 Gbit/s 0.2 mu m GaAs HEMT chip set for optical data receiver
Berroth, M.; Lang, M.; Wang, Z.-G.; Lao, Z.; Thiede, A.; Rieger-Motzer, M.; Bronner, W.; Kaufel, G.; Köhler, K.; Hülsmann, A.; Schneider, J.
Conference Paper
199631 GHz static and 39 GHz dynamic frequency divider ICs using 0,2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Rieger-Motzer, M.; Thiede, A.; Hurm, V.; Sedler, M.; Bronner, W.; Hülsmann, A.; Raynor, B.
Conference Paper
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1996Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
Haupt, M.; Ganser, P.; Köhler, K.; Emminger, S.; Müller, S.; Rothemund, W.
Conference Paper
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Journal Article
1996MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A.
Conference Paper
1996Monolithic 10 channel 10 Gbit/s amplifier array using 0.3 mu m AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Ludwig, M.; Bronner, W.; Schneider, J.
Journal Article
1996A monolithic 24.9 GHz limiting amplifier using 0.2 mu m-AlGaAs/GaAs-HEMTs
Lao, Z.; Berroth, M.; Hurm, V.; Rieger-Motzer, M.; Thiede, A.; Bronner, W.; Hülsmann, A.; Raynor, B.
Conference Paper
1996Radiation detection using integrated GaAs HEMT electronics
Lauxtermann, S.; Bronner, W.; Ludwig, J.; Runge, K.
Journal Article
19951.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs
Hurm, V.; Benz, W.; Berroth, M.; Fink, T.; Fritzsche, D.; Haupt, M.; Hofmann, P.; Köhler, K.; Ludwig, M.; Mause, K.; Raynor, B.; Rosenzweig, J.
Journal Article
199517 GHz broadband amplifier with 25 dB gain using a 0.3 mym AlGaAs/GaAs/AlGaAs HEMT technology
Lang, M.; Berroth, M.; Rieger-Motzer, M.; Hülsmann, A.; Hoffmann, P.; Kaufel, G.; Köhler, K.; Raynor, B.; Wang, Z.-G.
Journal Article
1995Entwurf und Charakterisierung schneller GaAs-Abtasthalteglieder hoher Genauigkeit
Rohmer, G.
Dissertation
1995GaAs readout electronics for particle detectors
Lauxtermann, S.; Bronner, W.; Runge, K.
Conference Paper
1995Monolithic integrated optoelectronic circuits
Berroth, M.; Bronner, W.; Fink, T.; Hornung, J.; Hurm, V.; Jakobus, T.; Köhler, K.; Lang, M.; Nowotny, U.; Wang, Z.-G.
Conference Paper
1994An 800 MSps Track and hold using a 0.3 µm AlGaAs-HEMT-technology
Rohmer, G.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.; Sauerer, J.
Conference Paper
1994GaAs for ADCs. System needs and device requirements
Sauerer, J.; Oehler, F.; Rohmer, G.; Schlag, U.
Conference Paper
1994Gds and fT analysis of pseudomorphic MODFETs with gate lengths down to 0.1 mym
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1994High gain operational amplifier implemented in 0.5 µm GaAs E/D HEMT technology
Feng, S.; Seitz, D.; Sauerer, J.
Journal Article
1994Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion
Feng, S.; Sauerer, J.; Seitzer, D.
Conference Paper
1994Molecular beam epitaxy and technology for the monolithic integration of quantum well lasers and AlGaAs/GaAs/AlGaAs-HEMT electronics
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.
Conference Paper
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Conference Paper
1994Statistical characterization of GaAs E/D HEMT analog components for data conversion ICs
Feng, S.; Seitzer, D.
Conference Paper
1994Technologie zur Herstellung modulationsdotierter Feldeffekttransistoren -MODFETs- unter Verwendung der Elektronenstrahl-Lithographie
Hülsmann, A.
Dissertation
1994Thermally induced failure in GaAs transistors exposed to alpha particle irradiation
Moglestue, C.; Buot, F.; Anderson, W.T.
Conference Paper
1993An 18-34 GHz dynamic frequency divider based on 0.2 mym AlGaAs/GaAs/AlGaAs quantum-well transistors
Thiede, A.; Berroth, M.; Nowotny, U.; Seibel, J.; Bosch, R.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
199328-51 GHz dynamic frequency divider based on 0.15 mym T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs.
Thiede, A.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.; Berroth, M.; Braunstein, J.; Nowotny, U.
Journal Article
1993A 3.6 Gigasample/s 5 bit analog to digital converter using 0.3 mu m AlGaAs-HEMT technology
Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.
Conference Paper
1993Gds analysis of pseudomorphic MODFETs on GaAs substrate with lg down to 0.1 mym.
Braunstein, J.; Tasker, P.J.; Hülsmann, A.; Köhler, K.; Bronner, W.; Schlechtweg, M.
Conference Paper
1993Integration of a quantum well laser with AlGaAs/GaAs-HEMT electronics.
Bronner, W.; Hornung, J.; Köhler, K.; Olander, E.; Wang, Z.-G.
Conference Paper
1993Optical control of pseudomorphic HEMT-based MMIC oscillators.
Bangert, A.; Rosenzweig, J.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Schneider, J.
Journal Article
1993Untersuchungen an GaAs-HEMT-Analogkomponenten für überabtastende Analog/Digital-Umsetzer mit hoher Geschwindigkeit
Feng, S.
Dissertation
199216 x 16 bit parallel multiplier based on 6K gate array with 0.3 mym AlGaAs/GaAs quantum well transistors
Thiede, A.; Berroth, M.; Hurm, V.; Nowotny, U.; Seibel, J.; Gotzeina, W.; Sedler, M.; Raynor, B.; Köhler, K.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Schneider, J.
Journal Article
1992Controle optico de um oscilador de microondas empregando transistores HEMT.
Bangert, A.; Herczfeld, P.R.; Romero, M.A.
Conference Paper
1992Design on high performance GaAs latched comparator for data conversion applications
Feng, S.; Seitzer, D.
Conference Paper
1992Investigation of transport phenomena in pseudomorphic MODFETs
Braunstein, J.; Tasker, P.; Schweizer, T.; Hülsmann, A.; Schlechtweg, M.; Kaufel, G.; Köhler, K.
Conference Paper
1992A monolithic HEMT-amplifier with feedback in coplanar waveguide technology
Bischof, W.; Ehrlinger, W.; Reinert, W.; Berroth, M.
Conference Paper
1992Mushroom shaped gates in a dry etched recessed gate process
Kaufel, G.; Hülsmann, A.; Raynor, B.; Hofmann, P.; Schneider, J.; Hornung, J.; Jakobus, T.; Berroth, M.; Köhler, K.
Conference Paper
1992Probing the In mole fraction limits for pseudomorphic MODFETs.
Braunstein, J.; Tasker, P.J.; Reinert, W.; Schlechtweg, M.; Bosch, R.; Köhler, K.; Hülsmann, A.; Kaufel, G.
Conference Paper
199110 Gbit/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver.
Hurm, V.; Ludwig, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Rosenzweig, J.
Conference Paper
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Conference Paper
1991A 4 Gs/s and 10 mV latched comparator in 0.5 mu m GaAs HEMT technology
Feng, S.; Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D.
Conference Paper
19918.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mym recessed-gate AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Benz, W.; Huelsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.
Journal Article
1991Carrier transport in HEMT's analyzed by high-field electroluminescence.
Zappe, H.P.; As, D.J.
Journal Article
1991A direct optical injection locked 8 GHz MMIC oscillator.
Bangert, A.; Ludwig, M.
Journal Article
1991GaAs/AlGaAs HEMT's with sub 0.5 mym gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic -DCFL-
Hülsmann, A.; Kaufel, G.; Raynor, B.; Glorer, K.H.; Olander, E.; Weismann, B.; Schneider, J.; Jakobus, T.; Koehler, K.
Conference Paper
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Conference Paper
1991Spectrum of hot-electron luminescence from high electron mobility transistors.
As, D.J.; Zappe, H.P.
Journal Article
1990E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits
Hülsmann, A.; Kaufel, G.; Raynor, B.; Schneider, J.; Jakobus, T.; Köhler, K.
Journal Article
1990Modelling and realization of a monolithic 27 GHz HEMT amplifier in coplanar waveguide technology
Bischof, W.; Ehrlinger, W.; Reinert, W.; Berroth, M.
Conference Paper