Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1998Atomistic analysis of the vacancy mechanism of impurity diffusion in silicon
List, S.; Ryssel, H.
Journal Article
1998Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Book Article
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Journal Article
1997Vacancy-assisted oxygen precipitation phenomena in Si
Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.
Journal Article
1995Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Conference Paper
1994Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Conference Paper