Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. | | |
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| 1983 | 1.54-micro m luminescence of erbium-implanted III-V semiconductors and silicon.
Schneider, J.; Pomrenke, G.; Axmann, A.; Ennen, H. | Journal Article |
| 1983 | The lateral-extension of radiation damage in ion-implanted semiconductors.
Fritzsche, C.R.; Rothemund, W. | Journal Article |
| 1983 | Rare earth activated luminescence in InP, GaP and GaAs.
Pomrenke, G.; Schneider, J.; Axmann, A.; Kaufmann, U.; Ennen, H.; Windscheif, J. | Journal Article |
| 1982 | Determination of deep donor binding energies from their g values.
Schirmer, O.F.; Scheffler, M. | Journal Article |
| 1982 | Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U. | Journal Article |
| 1982 | Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H. | Journal Article |
| 1981 | Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP.
Bimberg, D.; Bubenzer, A. | Journal Article |