Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
19831.54-micro m luminescence of erbium-implanted III-V semiconductors and silicon.
Schneider, J.; Pomrenke, G.; Axmann, A.; Ennen, H.
Journal Article
1983The lateral-extension of radiation damage in ion-implanted semiconductors.
Fritzsche, C.R.; Rothemund, W.
Journal Article
1983Rare earth activated luminescence in InP, GaP and GaAs.
Pomrenke, G.; Schneider, J.; Axmann, A.; Kaufmann, U.; Ennen, H.; Windscheif, J.
Journal Article
1982Determination of deep donor binding energies from their g values.
Schirmer, O.F.; Scheffler, M.
Journal Article
1982Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U.
Journal Article
1982Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H.
Journal Article
1981Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP.
Bimberg, D.; Bubenzer, A.
Journal Article