Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2009High-voltage GaAs photovoltaic laser power converters
Schubert, J.; Oliva, E.; Dimroth, F.; Guter, W.; Löckenhoff, R.; Bett, A.W.
Journal Article
2008Improved optical confinement in 1.55 micrometer InAs/GaInAsP quantum dot lasers grown by MOVPE
Franke, D.; Harde, P.; Kreissl, J.; Möhrle, M.; Rehbein, W.; Künzel, H.; Pohl, U.W.; Bimberg, D.
Conference Paper
2008Monolithic directly-modulated multi-wavelength-channel GalnAsP/InP micro-ring laser array
Bennecer, A.; Penty, R.V.; White, I.H.; Williams, K.A.; Hamacher, M.; Heidrich, H.
Conference Paper
2006Wafer-level fabrication of microring resonators using adhesive wafer bonding
Dragoi, V.; Mittendorfer, G.; Thanner, C.; Lindner, P.; Alexe, M.; Pintilie, L.; Hamacher, M.; Heidrich, H.
Conference Paper
1998International IEEE MTT/AP Workshop on MMIC Design, Packaging, and System Applications 1998
 
Conference Proceedings
1997Galliumarsenid-Technologie
Wessel, H.
Journal Article
1992Ausgewählte Beiträge zu neuen naturwissenschaftlichen und technologischen Entwicklungen
Wessel, H.; Goymann, S.; Kersten, G.; Kohlhoff, J.; Kretschmer, T.; Wiemken, U.
Book
1992Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparator
Feng, S.; Seitzer, D.
Journal Article
1992Modellierung des dynamischen Verhaltens von Kurzkanal MOS-FETs
Budde, W.
Conference Paper
1991Überblick und Haupttrends im Bereich Halbleitermaterialien und -technologien
Kersten, G.
Book
1988Photo response of the EL2 absorption band and of the As plus Ga ESR Signal in GaAs.
Dischler, B.; Kaufmann, U.
Journal Article
1987Infrared studies of the dynamics of transformations between normal and metastable state of the EL2 center in GaAs
Fuchs, F.; Dischler, B.
Journal Article
1986Identifizierung und Charakterisierung von Punktdefekten in GaAs und InP
Baeumler, M.; Pomrenke, G.; Schneider, J.; Kaufmann, U.; Müller, H.; Ennen, H.; Windscheif, J.
Book
1986New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Journal Article
1986New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Book Article
1986Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Conference Paper
1986Schottky-Kontakte in der Galliumarsenid-Mikroelektronik
Rupprecht, H.S.
Journal Article
1986Spectrally resolved photo-response of the EL2 absorption in undoped semi-insulating GaAs
Fuchs, F.; Dischler, B.; Kaufmann, U.
Book Article
1985As(sub)Ga - Induced dichroism in GaAs
Kaufmann, U.
Journal Article
1985New quantitative line scanning technique for homogeneity assessment of semi-insulating GaAs wafers
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Journal Article
1985Photoresponse of the As tief Ga antisite defect in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Journal Article
1984Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs.
Haydl, W.H.
Journal Article
19831.54-micro m luminescence of erbium-implanted III-V semiconductors and silicon.
Schneider, J.; Pomrenke, G.; Axmann, A.; Ennen, H.
Journal Article
1983The lateral-extension of radiation damage in ion-implanted semiconductors.
Fritzsche, C.R.; Rothemund, W.
Journal Article
1982Electron spin resonance of As Ga antisite defects in fast neutronirradiated GaAs
Woerner, R.; Schneider, J.; Kaufmann, U.
Journal Article
1982Point defects in GaP, GaAs and InP
Schneider, J.; Kaufmann, U.
Journal Article
1982Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H.
Journal Article