Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2017GaSb-based VECSEL for high-power applications and Ho-pumping
Holl, Peter; Rattunde, Marcel; Adler, Steffen; Scholle, Karsten; Lamrini, Samir; Fuhrberg, Peter; Diwo-Emmer, Elke; Aidam, Rolf; Bronner, Wolfgang; Wagner, Joachim
Conference Paper
2013Defects and noise in type-II superlattice infrared detectors
Walther, M.; Wörl, A.; Daumer, V.; Rehm, R.; Kirste, L.; Rutz, F.; Schmitz, J.
Conference Paper
2009Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers
Burns, D.; Hopkins, J.-M.; Kemp, A.J.; Rösener, B.; Schulz, N.; Manz, C.; Köhler, K.; Rattunde, M.; Wagner, J.
Conference Paper
2008GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm
Hopkins, J.-M.; Hempler, N.; Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.; Burns, D.
Journal Article
2008An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2008Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure
Bückers, C.; Thränhardt, A.; Koch, S.W.; Rattunde, Marcel; Schulz, N.; Wagner, Joachim; Hader, J.; Moloney, J.V.
Journal Article
2008Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J.
Conference Paper
2008Two-micron semiconductor disk lasers achieve higher powers
Rattunde, M.; Rösener, B.; Schulz, N.; Manz, C.; Hopkins, J.-M.; Burns, D.; Wagner, J.
Journal Article
2008Widely tunable micro-mechanical external-cavity diode laser emitting around 2.1 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.; Bläsi, B.; Kallweit, D.; Zappe, H.
Journal Article
2007Effect of the cavity resonance-gain offset on the output power characteristics of GaSb-based VECSELs
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2007High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm
Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wörner, E.; Wagner, J.
Conference Paper
2007Pulsed pumping of semiconductor disk lasers
Hempler, N.; Hopkins, J.-M.; Kemp, A.J.; Schulz, N.; Rattunde, M.; Wagner, J.; Dawson, M.D.; Burns, D.
Journal Article
2007Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 µm
Schulz, N.; Rattunde, M.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Brauch, U.
Journal Article
2007Tunable, single-frequency, diode-pumped 2.3 µm VECSEL
Hopkins, J.-M.; Maclean, A.J.; Burns, D.; Riis, E.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J.
Journal Article
2006Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section
Pfahler, C.; Eichhorn, M.; Kelemen, M.T.; Kaufel, G.; Mikulla, M.; Schmitz, J.; Wagner, J.
Journal Article
2006GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J.
Journal Article
2006GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J.
Journal Article
2006GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Conference Paper
2006High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.
Journal Article
2006High-peak-power pulsed operation of 2.0 µm (AlGaIn) (AsSb) quantum-well ridge waveguide diode lasers
Eichhorn, M.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Journal Article
2006High-power 1.9-µm diode laser arrays with reduced far field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.
Journal Article
2006High-power diode laser arrays emitting at 2 µm with reduced far-field angle
Kelemen, M.T.; Weber, J.; Rattunde, M.; Kaufel, G.; Schmitz, J.; Moritz, R.; Mikulla, M.; Wagner, J.; Pfahler, C.
Conference Paper
2006Widely tunable GaSb-based external cavity diode laser emitting around 2.3 µm
Geerlings, E.; Rattunde, M.; Schmitz, J.; Kaufel, G.; Zappe, H.P.; Wagner, J.
Journal Article
2005GaSb-based 1.9-2.4 µm quantum-well diode lasers with low-beam divergence
Rattunde, M.; Geerlings, E.; Schmitz, J.; Kaufel, G.; Weber, J.; Mikulla, M.; Wagner, J.
Conference Paper
2005High-power diode laser arrays at 2 µm for materials processing
Kelemen, M.T.; Weber, J.; Rattunde, M.; Pfahler, C.; Kaufel, G.; Moritz, R.; Manz, C.; Mikulla, M.; Wagner, J.
Conference Paper
2005InAs/(GaIn)Sb short-period superlattices for focal plane arrays
Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Cabanski, W.; Ziegler, J.
Conference Paper
2005InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging
Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Ziegler, J.; Cabanski, W.
Conference Paper
2005Passivation of InAs/(GaIn)Sb short-period superlattice photodiodes with 10 µm cutoff wavelength by epitaxial overgrowth with Al(x)Ga(1-x)As(y)Sb(1-y)
Rehm, R.; Walther, M.; Fuchs, F.; Schmitz, J.; Fleißner, J.
Journal Article
2004Comprehensive analysis of the internal losses in 2.0 µm (AlGaIn)(AsSb) quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2004GaSb-based 2.3 µm quantum-well diode-lasers with low beam divergence
Rattunde, M.; Schmitz, J.; Kaufel, G.; Wagner, J.
Conference Paper
2004Room-temperature external cavity GaSb-based diode laser around 2.13 µm
Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J.
Journal Article
2003Gain and internal losses in GaSb-based 2 µm quantum-well diode lasers
Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2003InAs/(GaIn)Sb short period superlattices for IR detection
Fuchs, F.; Schmitz, J.; Pletschen, W.; Koidl, P.; Weimann, G.
Conference Paper
2003Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M.
Dissertation
2003Temperature sensitivity of high power GaSb based 2 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Conference Paper
20021.9-µm and 2.0-µm laser diode pumping of Cr(2+):ZnSe and Cr(2+):CdMnTe
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Journal Article
2002Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Walther, M.; Wagner, J.
Journal Article
2002Efficient 100 mW Cr(2+): ZnSe laser pumped by a 1.9 µm laser diode
Albrecht, D.; Mond, M.; Heumann, E.; Huber, G.; Kück, S.; Levchenko, V.I.; Yakimovich, N.; Shcherbitsky, V.G.; Kisel, V.E.; Kuleshov, N.V.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Wagner, J.
Conference Paper
2002Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
Agert, C.; Gladkov, P.S.; Bett, A.W.
Journal Article
2002Physics and applications of III-Sb based type-I QW diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper
2002Sb-based mid-infrared diode lasers
Mermelstein, C.; Rattunde, M.; Schmitz, J.; Simanowski, S.; Kiefer, R.; Walther, M.; Wagner, J.
Conference Paper
2001Power efficiency of GaSb based 2.0 µm diode lasers
Rattunde, M.; Mermelstein, C.; Schmitz, J.; Kiefer, R.; Pletschen, W.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
2001Temperature dependence of threshold current for 1.8 to 2.3 µm (AlGaIn)(AsSb)-based QW diode lasers
Rattunde, M.; Mermelstein, C.; Simanowski, S.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Walther, M.; Wagner, J.
Conference Paper
2000Anodic oxidation of GaSb in Acid-glycol-water electrolytes
Sulima, O.; Bett, A.; Wagner, J.
Journal Article
2000Room temperature cw operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 µm wavelength range
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Conference Paper
2000Room-temperature cw Operation of GaInAsSb/AlGaAsSb Quantum Well Diode Lasers emitting beyond 2 µm
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Conference Paper
2000Room-temperature low-threshold low-loss continous-wave operation of 2.26 µm GaInAsSb/AlGaAsSb quantum-well laser diodes
Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.
Journal Article
2000Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.
Journal Article
1999Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.
Journal Article
1985Free-exciton luminescence in GaSb quantum wells confined by short-period AISb-GaSb superlattices
Ploog, K.; Ohmori, Y.; Okamoto, H.; Stolz, W.; Wagner, J.
Journal Article