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| 2013 | Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
Weig, T.; Schwarz, U.T.; Sulmoni, L.; Lamy, J.-M.; Carlin, J.-F.; Grandjean, N.; Boiko, D.L. | Conference Paper |
| 2012 | (Al, In)GaN laser diodes with optimized ridge structures
Holc, K.; Köhler, K.; Pletschen, W.; Wagner, J.; Schwarz, U.T. | Conference Paper |
| 2012 | Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | Dual-band class-ABJ AlGaN/GaN high power amplifier
Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O. | Conference Paper |
| 2012 | GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Cäsar, M.; Müller, S.; Raay, F. van; Kiefer, R.; Brueckner, P.; Kühn, J.; Musser, M.; Kirste, L.; Haupt, C.; Pletschen, W.; Lim, T.; Aidam, R.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2012 | Line beam processing for laser lift-off of GaN from sapphire
Delmdahl, R.; Pätzel, R.; Brune, J.; Senczuk, R.; Goßler, C.; Moser, R.; Kunzer, M.; Schwarz, U.T. | Journal Article |
| 2012 | Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well
Danhof, J.; Schwarz, S.U.; Meyer, T.; Vierheilig, C.; Peter, M. | Journal Article |
| 2012 | Trade-offs between performance and reliability in AlGaN/GaN transistors
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Dammann, M.; Cäsar, M.; Brueckner, P.; Müller, S.; Mikulla, M.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R. | Conference Paper |
| 2011 | Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.; Maroldt, S.; Quay, R.; Pletschen, W.; Leuther, A.; Ambacher, O. | Journal Article, Conference Paper |
| 2011 | Dynamics of GaN-based laser diodes from violet to green
Scheibenzuber, W.; Hornuss, C.; Schwarz, U.T. | Conference Paper |
| 2011 | From epitaxy to backside process: Reproducible AlGaN/GaN HEMT technology for reliable and rugged power devices
Bronner, W.; Waltereit, P.; Müller, S.; Dammann, M.; Kiefer, R.; Dennler, P.; Raay, F. van; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | InAlGaN/GaN MMICs in microstrip transmission line technology for wideband applications
Schuh, P.; Sledzik, H.; Oppermann, M.; Quay, R.; Kühn, J.; Lim, T.; Waltereit, P.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2011 | Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Foerster, C.; Cimalla, V.; Stephan, R.; Pezoldt, J.; Stauden, T.; Ambacher, O.; Hein, M.A. | Journal Article |
| 2011 | Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T. | Journal Article |
| 2011 | Recent results of blue and green InGaN laser diodes for laser projection
Lutgen, S.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Lell, A.; Avramescu, A.; Eichler, C.; Lermer, T.; Müller, J.; Bruederl, G.; Gomez-Iglesias, A.; Strauss, U.; Scheibenzuber, W.G.; Schwarz, U.T.; Pasenow, B.; Koch, S. | Conference Paper |
| 2010 | AlGaN/GaN epitaxy and technology
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Kiefer, R.; Pletschen, W.; Müller, S.; Aidam, R.; Menner, H.; Kirste, L.; Köhler, K.; Mikulla, M.; Ambacher, O. | Journal Article |
| 2010 | Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface
Lorenz, P.; Gutt, R.; Himmerlich, M.; Schaefer, J.A.; Krischok, S. | Journal Article, Conference Paper |
| 2010 | Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes
Scheibenzuber, W.; Schwarz, U.T.; Sulmoni, L.; Carlin, J.F.; Castiglia, A.; Grandjean, N. | Journal Article |
| 2010 | High efficiency and low leakage AlGaN/GaN HEMTs for a robust, reproducible and reliable X-band MMIC space technology
Waltereit, P.; Bronner, W.; Kiefer, R.; Quay, R.; Kühn, J.; Raay, F. van; Dammann, M.; Müller, S.; Libal, C.; Meier, T.; Mikulla, M.; Ambacher, O. | Conference Paper |
| 2010 | Kampf der Giganten
Hüning, F.; Ambacher, O.; Guerra, A. | Journal Article |
| 2009 | Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices
Himmerlich, M.; Koufaki, M.; Ecke, G.; Mauder, C.; Cimalla, V.; Schaefer, J.A.; Kondilis, A.; Pelekanos, N.T.; Modreanu, M.; Krischok, S.; Aperathitis, E. | Journal Article |
| 2009 | Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
Maroldt, S.; Haupt, C.; Pletschen, W.; Müller, S.; Quay, R.; Ambacher, O.; Schippel, C.; Schwierz, F. | Journal Article |
| 2009 | High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O. | Conference Paper |
| 2009 | Observation of Fermi-edge and excitons and exciton-phonon complexes in the optical response of heavily doped n-type wurtzite GaN
Shokhovets, S.; Köhler, K.; Ambacher, O.; Gobsch, G. | Journal Article |
| 2009 | Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study
Bläsing, J.; Krost, A.; Hertkorn, J.; Scholz, F.; Kirste, L.; Chuvilin, A.; Kaiser, U. | Journal Article |
| 2009 | Wide band gap based MEMS for harsh environment applications
Cimalla, V.; Lebedev, V.; Röhlig, C.-C.; Ambacher, O.; Niebelschütz, F.; Tonisch, K.; Pezoldt, J.; Brueckner, K.; Hein, M. | Conference Paper |
| 2008 | Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
Buchheim, C.; Goldhahn, R.; Gobsch, G.; Tonisch, K.; Cimalla, V.; Niebelschütz, F.; Ambacher, O. | Journal Article |
| 2008 | High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Raynor, B.; Mikulla, M.; Weimann, G. | Journal Article |
| 2008 | III-V and III-Nitride engineered heterostructures: Wafer bonding, ion slicing and more
Moutanabbir, O.; Christiansen, S.; Senz, S.; Scholz, R.; Petzold, M.; Gösele, U. | Conference Paper |
| 2008 | Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
Tonisch, K.; Buchheim, C.; Niebelschütz, F.; Schober, A.; Gobsch, G.; Cimalla, V.; Ambacher, O.; Goldhahn, R. | Journal Article |
| 2008 | Sapphire-GaN-based planar integrated free-space optical system
Hofmann, M.; Hauguth-Frank, S.; Lebedev, V.; Ambacher, O.; Sinziger, S. | Journal Article |
| 2008 | SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J. | Conference Paper, Journal Article |
| 2008 | Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R. | Conference Paper |
| 2008 | Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
Brueckner, K.; Niebelschütz, F.; Tonisch, K.; Michael, S.; Dadgar, A.; Krost, A.; Cimalla, V.; Ambacher, O.; Stephan, R.; Hein, M.A. | Journal Article |
| 2008 | A uniform, reproducible and reliable GaN HEMT technology with breakdown voltages in excess of 160 V delivering more than 60% PAE at 80 V
Waltereit, P.; Bronner, W.; Quay, R.; Dammann, M.; Müller, S.; Kiefer, R.; Walcher, H.; Raay, F. van; Kappeler, O.; Mikulla, M. et al. | Conference Paper |
| 2007 | GaN HEMT: Trends in civil and military circuit applications
Quay, R.; Raay, F. van; Tessmann, A.; Kiefer, R.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2007 | Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S. | Conference Paper |
| 2007 | Measurement of the internal quantum efficiency of InGaN quantum wells
Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B. | Conference Paper |
| 2007 | Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E. | Conference Paper |
| 2007 | Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S. | Conference Paper |
| 2006 | Design and W-CDMA characterization of a wideband AlGaN/GaN HEMT power amplifier for future 3G multiband base station applications
Wiegner, D.; Seyfried, U.; Templ, W.; Naß, T.; Weber, S.; Wörner, S.; Dettmann, I.; Quay, R.; Raay, F. van; Walcher, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2006 | Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R. | Conference Paper |
| 2006 | GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate
Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G. | Journal Article |
| 2006 | Linear broadband GaN MMICs for Ku-band applications
Schuh, P.; Leberer, R.; Sledzik, H.; Schmidt, D.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.; Kiefer, R.; Bronner, W. | Conference Paper |
| 2006 | Load pull characterization of GaN/AlGaN HEMTs
Schuberth, C.; Arthaber, H.; Mayer, M.; Magerl, G.; Quay, R.; Raay, F. van | Conference Paper |
| 2006 | Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Conference Paper, Journal Article |
| 2006 | X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N. | Journal Article, Conference Paper |
| 2005 | An AlGaN/GaN push-pull HEMT amplifier with 400 MHz bandwidth and 100 W peak output power
Kappeler, O.; Quay, R.; Raay, F. van; Kiefer, R.; Reiner, R.; Walcher, H.; Müller, S.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | GaN/AlGaN HEMTs for highly linear communication applications in L-frequency band
Quay, R.; Würfl, J.; Wiegner, D.; Fischer, G.; Schubert, C.; Magerl, G. | Conference Paper |
| 2005 | Growth of AlGaN/GaN based electronic device structures with semi-insulating GaN buffer and AlN interlayer
Müller, S.; Köhler, K.; Kiefer, R.; Quay, R.; Baeumler, M.; Kirste, L. | Journal Article |
| 2005 | High power/high bandwidth GaN MMICs and hybrid amplifiers: Design and characterization
Raay, F. van; Quay, R.; Kiefer, R.; Müller, S.; Walcher, H.; Seelmann-Eggebert, M.; Kappeler, O.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2005 | High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G. | Conference Paper |
| 2005 | Investigation into efficiency enhancements in wide bandgap semiconductor circuits
Krausse, D. | Master Thesis |
| 2005 | Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs
Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Müller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M. | Conference Paper |
| 2005 | Kurzwellige Diodenlaser auf der Basis der Gruppe III-Nitride
Sommer, F. | Dissertation |
| 2005 | Multistage broadband amplifiers based on GaN HEMT technology for 3G/4G base station applications with extremely high bandwidth
Wiegner, D.; Merk, T.; Seyfried, U.; Templ, W.; Merk, S.; Quay, R.; Raay, F. van; Walcher, H.; Massler, H.; Seelmann-Eggebert, M.; Reiner, R.; Moritz, R.; Kiefer, R. | Conference Paper |
| 2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Conference Paper |
| 2005 | Performance and fabrication of GaN/AlGaN power MMIC at 10 GHz
Benkhelifa, F.; Kiefer, R.; Müller, S.; Raay, F. van; Quay, R.; Sah, R.E.; Dammann, M.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2005 | Violet-emitting diode lasers on low defect density GaN templates
Sommer, F.; Vollrath, F.; Kunzer, M.; Pletschen, W.; Müller, S.; Köhler, K.; Schlotter, P.; Wagner, J.; Weimar, A.; Haerle, V. | Journal Article |
| 2004 | Frontiers of III-V compounds and devices
Würfl, J.; Schlechtweg, M. | Conference Paper |
| 2004 | Growth of GaN crystals and epilayers from solutions at ambient pressure
Meissner, E.; Sun, G.; Hussy, S.; Birkmann, B.; Friedrich, J.; Müller, G. | Conference Paper |
| 2004 | III-N based short-wavelength LEDs, LUCO-LEDs and lasers
Sommer, F.; Stephan, T.; Vollrath, F.; Köhler, K.; Kunzer, M.; Müller, S.; Schlotter, P.; Pletschen, W.; Kaufmann, U.; Wagner, J. | Journal Article |
| 2003 | AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz
Quay, R.; Weimann, G. | Journal Article |
| 2003 | Development of a 2"-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications
Kiefer, R.; Quay, R.; Müller, S.; Feltgen, T.; Raynor, B.; Schleife, J.; Köhler, K.; Massler, H.; Ramberger, S.; Raay, F. van; Tessmann, A.; Mikulla, M.; Weimann, G. | Journal Article |
| 2003 | Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures
Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J. | Conference Paper |
| 2003 | Thick GaN layers grown by hydride vapor-phase epitaxy: Hetero- versus homo-epitaxy
Hageman, P.R.; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L.; Lucznik, B.; Bockowski, M.; Porowski, S.; Müller, S. | Journal Article |
| 2003 | Violet and blue laser diodes make strides
Haerle, V.; Lell, A.; Wagner, J. | Journal Article |
| 2002 | AlGaN/GaN HEMTs on SiC operating at 40 GHz
Quay, R.; Kiefer, R.; Raay, F. van; Massler, H.; Ramberger, S.; Müller, S.; Dammann, M.; Mikulla, M.; Schlechtweg, M.; Weimann, G. | Conference Paper |
| 2002 | AlGaN/GaN-HEMTs for power applications up to 40 GHz
Kiefer, R.; Quay, R.; Müller, S.; Köhler, K.; Raay, F. van; Raynor, B.; Pletschen, W.; Massler, H.; Ramberger, S.; Mikulla, M.; Weimann, G. | Conference Paper |
| 2002 | Feasibility of AlGaN/GaN HEMTs for Ku- and Ka-Band applications
Kiefer, R.; Quay, R. | Conference Paper |
| 2002 | Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Lossy, R.; Chaturvedi, N.; Würfl, J.; Müller, S.; Köhler, K. | Journal Article |
| 2001 | Heat-spreading diamond films for GaN-based high-power transistor devices
Seelmann-Eggebert, M.; Meisen, P.; Schaudel, F.; Kiodl, P.; Vescan, A.; Leier, H. | Journal Article |
| 1999 | Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy
Yoshikawa, M.; Kunzer, M.; Wagner, J.; Obloh, H.; Schlotter, P.; Schmidt, R.; Herres, N.; Kaufmann, U. | Journal Article |
| 1999 | Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs (LUCOLEDs)
Schlotter, P.; Baur, J.; Hielscher, C.; Kunzer, M.; Obloh, H.; Schmidt, R.; Schneider, J. | Journal Article |
| 1999 | Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
Kaufmann, U.; Kunzer, M.; Obloh, H.; Maier, M.; Manz, C.; Ramakrishnan, A.; Santic, B. | Journal Article |
| 1998 | Nature of the 2.8 eV photoluminescence band in Mg doped GaN
Kaufmann, U.; Kunzer, M.; Maier, M.; Obloh, H.; Ramakrishnan, A.; Santic, B.; Schlotter, P. | Journal Article |
| 1998 | Optische Spektroskopie an Halbleitern mit großem Bandabstand
Behr, D. | Dissertation |
| 1998 | Optische Spektroskopie und Magnetische Ressonanz an Materialkomponenten von Lumineszenzkonversions-Leuchtdioden
Baur, J. | Dissertation |
| 1998 | White light emitting diodes
Baur, J.; Schlotter, P.; Schneider, J. | Conference Paper |
| 1997 | Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H. | Journal Article |
| 1997 | Ionized donor bound excitons in GaN
Santic, B.; Merz, C.; Kaufmann, U.; Niebuhr, R.; Obloh, H.; Bachem, K. | Journal Article |
| 1997 | Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance
Kunzer, M.; Baur, J.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I. | Journal Article |
| 1997 | Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Conference Paper |
| 1997 | Structural and optical properties of AlGaN/GaN quantum well structures grown by MOCVD on sapphire
Niebuhr, R.; Bachem, K.H.; Behr, D.; Hoffmann, C.; Kaufmann, U.; Lu, Y.; Santic, B.; Wagner, J.; Arlery, M.; Rouviere, J.L.; Jürgensen, H. | Conference Paper |
| 1997 | Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C.; Kunzer, M.; Santic, B.; Kaufmann, U.; Akasaki, I.; Amano, H. | Journal Article |
| 1996 | Free and bound excitons in thin wurtzite GaN layers on sapphire
Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H. | Journal Article |
| 1996 | Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD
Kaufmann, U.; Kunzer, M.; Merz, C.; Akasaki, I.; Amano, H. | Conference Paper |
| 1996 | MOCVD-Züchtung und Charakterisierung von Nitridischen Verbindungshalbleitern
Niebuhr, R. | Dissertation |
| 1996 | Photoluminenzspektroskopie an freien und gebundenen Exzitonen in Wurtzit-GaN auf Saphirsubstrat
Merz, C. | Thesis |
| 1996 | Resonant raman scattering in hexagonal GaN
Behr, D.; Wagner, J.; Schneider, J.; Amano, H.; Akasaki, I. | Journal Article |
| 1995 | Characterization of residual transition metal ions in GaN and AlN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K. | Conference Paper |
| 1995 | Determination of the GaN/AlN band discontinuities via the '-/0' acceptor level of iron
Baur, J.; Kunzer, M.; Maier, K.; Kaufmann, U.; Schneider, J. | Journal Article |
| 1995 | Dry etching of GaN at low pressure
Pletschen, W.; Niebuhr, R.; Bachem, K.H. | Conference Paper |
| 1995 | Optisch detektierte Elektronenspinresonanz an Defekten in aktuellen Verbindungshalbleitern
Kunzer, M. | Dissertation |
| 1995 | Photoluminescence of residual transition metal impurities in GaN
Baur, J.; Kaufmann, U.; Kunzer, M.; Schneider, J. | Journal Article |
| 1994 | Defektspektroskopie an Halbleitern mit hohem Bandabstand - GaN, SiC, Diamant
Maier, K. | Dissertation |
| 1994 | Determination of the GaN/AlN band offset via the -/0 acceptor level of iron
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J. | Journal Article |
| 1994 | Infrared luminescence of residual iron deep level acceptors in gallium nitride -GaN- epitaxial layers.
Baur, J.; Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Amano, H.; Akasaki, I.; Detchprohm, T.; Hiramatsu, K. | Journal Article |
| 1994 | Iron acceptors in gallium nitride -GaN-.
Maier, K.; Kunzer, M.; Kaufmann, U.; Schneider, J.; Monemar, B.; Akasaki, I.; Amano, H. | Journal Article |
| 1994 | ODMR studies of MOVPE-grown GaN epitaxial layers.
Kunzer, M.; Kaufmann, U.; Maier, K.; Schneider, J.; Herres, N.; Akasaki, I.; Amano, H. | Journal Article |
| 1994 | Optische Spektroskopie an nitridischen III-V Halbleitern
Baur, J. | Thesis |
| 1993 | Radiative energy transfer in GaN-Mg/Al2O3-Cr3plus epitaxial systems
Maier, K.; Schneider, J.; Akasaki, I.; Amano, H. | Journal Article |