Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1996GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE. Design, fabrication, and device results
Pereiaslavets, B.; Bachem, K.H.; Braunstein, J.; Eastman, L.F.
Journal Article
1995GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications
Pereiaslavets, B.; Bachem, K.; Braunstein, J.; Eastman, L.F.
Conference Paper
1992GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE.
Bachem, K.H.; Lauterbach, T.; Pletschen, W.
Journal Article
1992Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga0.5In0.5P/GaAs
Lauterbach, T.
Dissertation
1991Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations
Neumann, G.; Bender, G.; Herres, N.
Journal Article