Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2005Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M.
Journal Article
2005Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M.
Journal Article
2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R.
Conference Paper
2002(GaIn)(ASP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern
Serries, D.
Dissertation
2002Molekularstrahl-Epitaxie und Charakterisierung von Gruppe III-Arsenid/Nitridischen Halbleitern
Geppert, T.
Thesis
2002Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Köhler, K.; Herres, N.; Wagner, J.
Journal Article
2001N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Herres, N.
Journal Article