Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1998Optische Spektroskopie und Magnetische Ressonanz an Materialkomponenten von Lumineszenzkonversions-Leuchtdioden
Baur, J.
Dissertation
1993Point defects in silicon carbide.
Schneider, J.; Maier, K.
Journal Article
1992Electron spin resonance studies of transition metal deep level impurities in SiC.
Maier, K.; Schneider, J.; Wilkening, W.; Leibenzeder, S.; Stein, R.
Journal Article
1992Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V.
Journal Article
1992Special nuclear magnetic resonance techniques.
Ackermann, H.; Bagraev, N.T.; Harley, R.T.; Schneider, J.
Book Article
1992Transition metals in silicon carbide -SiC- - vanadium and titanium
Schneider, J.; Maier, K.; Müller, H.D.
Journal Article
1991Electron paramagnetic resonance of the shallow Sn donor in GaAs/Al0.68Ga0.32As-Sn heterostructures.
Wilkening, W.; Bauser, E.; Kaufmann, U.
Journal Article
1991Elektronenspinresonanz von tiefen und flachen Störstellen in Siliziumkarbid
Maier, K.
Thesis
1991Spin-Resonanz von delokalisierten und lokalisierten Elektronen in III-V Halbleitern
Wilkening, W.
Dissertation
1988Below band-gap photoresponse of undoped semi-insulating GaAs
Kaufmann, U.
Conference Paper
1988Electrical detection of nuclear magnetic resonance in GaAs-Al(x)Ga(1-x)As heterostructures
Schneider, J.; Dobers, M.; Weimann, G.; Ploog, K.; Klitzing, K. von
Journal Article
1987Electron spin resonance of erbium in gallium arsenide
Baeumler, M.; Schneider, J.; Köhl, F.; Tomzig, E.
Journal Article
1987Electronic structure of the neutral manganese acceptor in gallium arsenide
Schneider, J.; Wilkening, W.; Baeumler, M.; Köhl, F.; Kaufmann, U.
Journal Article
1986Defect characterization in gallium arsenide by infrared-spectroscopic techniques
Schneider, J.
Conference Paper
1986New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Journal Article
1986New photosensitive EPR signals in undoped semi-insulating GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Book Article
1986Photo-EPR of defects in undoped semiinsulating GaAs
Baeumler, M.; Wilkening, W.; Kaufmann, U.; Windscheif, J.
Conference Paper
1985Microscopic identification of defects in semiconductors by electron-spin-resonance and related techniques
Schneider, J.
Conference Paper
1985Photoresponse of the As tief Ga antisite defect in as-grown GaAs
Baeumler, M.; Kaufmann, U.; Windscheif, J.
Journal Article
1984Electron spin resonance identification of isolated Fe hoch 3+ in CdTe.
Brunthaler, G.; Schneider, J.; Kaufmann, U.
Journal Article
1983ESR of defects in III-V compounds
Schneider, J.
Conference Paper
1982Electron spin resonance of As Ga antisite defects in fast neutronirradiated GaAs
Woerner, R.; Schneider, J.; Kaufmann, U.
Journal Article
1982Neutron-transmutation doping of GaAs - as studied by ESR.
Schneider, J.; Kaufmann, U.
Journal Article
1982Spectroscopic study of vanadium in GaP and GaAs
Schneider, J.; Wörner, R.; Weber, J.; Köhl, F.; Kaufmann, U.; Ennen, H.
Journal Article