Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2010Effizienz von GaInN-Leuchtdioden: Struktur aktiver Schichten unter dem Einfluss substratinduzierter Defekte
Maier, M.
: Ambacher, O.
Dissertation
2010ZnS:Cu polymer nanocomposites for thin film electroluminescent devices
Schrage, C.; Althues, H.; Klausch, A.; Adam, D.; Kaskel, S.
Journal Article
2009Packaging influence on laser bars of different dimensions
Westphalen, T.; Leers, M.; Werner, M.; Traub, M.; Hoffmann, H.-D.; Ostendorf, R.
Conference Paper
2006Electroluminescence of InAs-GaSb heterodiodes
Hoffmann, D.; Hood, A.; Michel, E.; Fuchs, F.; Razeghi, M.
Journal Article
2005Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes
Hoffmann, D.; Gin, A.; Wei, Y.; Hood, A.; Fuchs, F.; Razeghi, M.
Journal Article
1993Electroluminescence from porous silicon
Kozlowski, F.; Steiner, P.; Lang, W.
Conference Paper
1993Light emitting diodes in porous silicon
Kozlowski, F.; Steiner, P.; Lang, W.; Sandmaier, H.
Conference Paper
1993A model for the electroluminescence of porous n-silicon
Kozlowski, F.; Steiner, P.; Lang, W.
Conference Paper
1992Hot-electron electroluminescence in GaAs transistors.
Zappe, H.P.
Journal Article
1992Raman-scattering in electroluminescent porous silicon
Kozlowski, F.; Steiner, P.; Lang, W.
Conference Paper
1992Spatially resolved Raman-measurements at electroluminescent porous n-silicon
Kozlowski, F.; Lang, W.
Journal Article
1991Study of lower-dimensional transport by electroluminescence.
Zappe, H.P.
Book Article
1990Electroluminescence from Gunn domains in GaAs MESFETS as a means for defect detection
Jantz, W.; Zappe, H.P.
Conference Paper
1990Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.
Moglestue, C.; Zappe, H.P.
Journal Article
1990Mechanisms for the emission of visible light from GaAs field-effect transistors
As, D.J.; Zappe, H.P.
Journal Article
1987Photo- and electroluminescence investigation of rare earth ions in III-V semiconductors
Ennen, H.
Conference Paper
1986Rare earth ions in LPE III-V semiconductors
Müller, H.D.; Körber, W.; Weber, J.; Hangleiter, A.; Benz, K.W.; Ennen, H.
Journal Article