Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Improving GaAs Solar Cell Performance and Growth Efficiency at MOVPE Growth Rates of 100 µm/h
Lang, R.; Schön, J.; Dimroth, F.; Lackner, D.
Presentation
2018Towards 90% Bifaciality for p-Type Cz-Si Solar Cells by Adaption of Industrial PERC Processes
Lohmüller, E.; Lohmüller, S.; Norouzi, M.H.; Saint-Cast, P.; Weber, J.; Meier, S.; Wolf, A.
Conference Paper
2018Towards the Efficiency Limits of Multicrystalline Silicon Solar Cells
Schindler, F.; Fell, A.; Müller, R.; Benick, J.; Richter, A.; Feldmann, F.; Krenckel, P.; Riepe, S.; Schubert, M.C.; Glunz, S.W.
Journal Article, Conference Paper
2017Synthesis and characterization of NIR dye-doped nanoparticles for in vivo tumor diagnostics
Schneider, Christine; Dembski, Sofia
Conference Paper
2016Ion implantation for high-efficiency silicon solar cells
Müller, Ralph
: Reinecke, H.; Glunz, S.W.; Lausen, G.
Dissertation
2015Electrical and Mechanical Properties of Plated Ni/Cu Contacts for Si Solar Cells
Kluska, S.; Bartsch, J.; Büchler, A.; Cimiotti, G.; Brand, A.A.; Hopman, S.; Glatthaar, M.
Conference Paper, Journal Article
2015Untersuchung technischer Einflussgrößen auf die elektrische Leitfähigkeit von festphasen-gesintertem Siliciumcarbid
Lankau, Volkmar
: Michaelis, Alexander (Gutachter); Martin, Hans-Peter (Betreuer); Lippmann, Wolfgang (Zweitgutachter)
Dissertation
2015Werkstofftrends: Keramische Laserwerkstoffe
Reschke, Stefan; Langner, Ramona; Freudendahl, Diana
Journal Article
2014Effect of cobalt doping on the sintering mechanisms of the lead-free piezoceramic (Bi0.5Na0.5)TiO3
Schmitt, Veronika; Raether, Friedrich
Journal Article
2014Effect of dopants on the local atomic structure and sintering behavior of bismuth sodium titanate
Schmitt, Veronika
Dissertation
2011Cu substitutionals and defect complexes in the lead-free ferroelectric knn
Kröbel, S.; Elsässer, C.
Conference Paper
2011Eisenbasierte Hochtemperatursupraleiter
Kohlhoff, J.
Journal Article
2011Werkstofftrends: Eisenbasierte Hochtemperatursupraleiter
Kohlhoff, J.; Reschke, S.; Grüne, M.
Journal Article
2010Transport properties of InN
Cimalla, V.; Lebedev, V.; Ambacher, O.; Polyakov, V.M.; Schwierz, F.; Niebelschütz, F.; Ecke, G.; Myers, T.H.; Schaff, W.J.
Book Article
2009Biogasfeinentschwefelung mittels neu entwickelter dotierter Aktivkohle
Rossow, S.; Deerberg, G.; Goetze, T.; Kanswohl, N.; Nelles, M.
Journal Article
2009Feinentschwefelung von Biogas mit dotierter Aktivkohle
Rossow, S.; Deerberg, G.; Goetze, T.; Kanswohl, N.; Nelles, M.
Journal Article
2009Weniger Schwefel
Rossow, S.
Journal Article
2009Weniger Schwefel - weniger Formaldehyd
Rossow, S.; Deerberg, G.; Goetze, T.; Kanswohl, N.; Schlegel, M.
Journal Article
2008Von hoher Reinheit - Feinentschwefelung
Rossow, S.
Journal Article
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Journal Article
2003Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates
Baeumler, M.; Diwo, E.; Jantz, W.; Sahr, U.; Müller, G.; Grant, I.
Conference Paper
1997Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
Niebuhr, R.; Bachem, K.H.; Kaufmann, U.; Maier, M.; Merz, C.; Santic, B.; Schlotter, P.; Jürgensen, H.
Journal Article
1995Optical and electrical characterization of boron-doped diamond films
Locher, R.; Wagner, J.; Fuchs, F.; Maier, M.; Gonon, P.; Koidl, P.
Journal Article
1995Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon
Jäger, H.-U.
Journal Article
1994Beiträge zum Sinterverhalten von LaCrO3-Pulvern
Eichler, K.; Otschik, P.; Jaenicke-Rößler, K.
Book
1994Doping dependence of the E1 and E1 plus Delta1 critical points in highly doped n- and p-type GaAs: Importance of surface band bending and depletion
Kuball, M.; Kelly, M.K.; Cardona, M.; Köhler, K.; Wagner, J.
Journal Article
1994Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors.
Larkins, E.C.; Schneider, H.; Ehret, S.; Fleissner, J.; Dischler, B.; Koidl, P.; Ralston, J.D.
Journal Article
1994Sinterability on doped lanthanum chromite
Eichler, K.; Syskakis, E.; Otschik, P.; Naoumidis, A.; Jaenicke-Rößler, K.
Conference Paper
1993Nondestructive characterization of Hg1-xCdxTe layer structures by magneto-thermoelectric measurements.
Baars, J.; Brink, D.
Conference Paper
1992Optische Untersuchungen an hoch dotierten GaAs-Schichten und GaAs/AlXGa1-XAs-Heterostrukturen
Ramsteiner, M.
Dissertation
1992Raman spectroscopy of dopant induced local vibrational modes in III-V semiconductors
Wagner, J.
Conference Paper
1992Shallow p-n junctions produced by laser doping with boron silicate glass
Bollmann, D.; Buchner, R.; Haberger, K.; Neumayer, G.
Conference Paper
1991The hot-carrier light emission for GaAs MESFETs
Koch, F.; Herzog, M.; Moglestue, C.; Schneider, J.; Rosenzweig, J.
Conference Paper
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Journal Article
1991Shallow p-n junctions produced by laser doping with Boron and Phosphorus Silicate glass
Bollmann, D.; Stock, G.; Neumayer, G.; Haberger, K.
Conference Paper
1990Raman spectroscopy of dopant impurities in homogeneously and planar -delta- doped III-V semiconductors.
Wagner, J.
Journal Article
1990Ultra flat P-N junctions formed by solid source laser doping
Stock, G.; Bollmann, D.; Buchner, R.; Neumayer, G.; Haberger, K.
Conference Paper
1990Ultra flat P-N junctions formed by solid source laser doping
Stock, G.; Bollmann, D.; Buchner, R.; Neumayer, G.; Haberger, K.
Conference Paper
1988Influence of initial conditions on point defect diffusion. Impact on models
Dürr, R.; Pichler, P.
Conference Paper
1983Anwendung des Laserausheilens fuer Halbleiterbauelemente
Ryssel, H.; Goetzlich, J.
Journal Article
1983CO2-laser annealing of ion implanted silicon - relaxation characteristics of metastable concentrations
Goetzlich, J.; Tsien, P.H.; Henghuber, G.; Ryssel, H.
Book Article
1983Doping behavior of implanted Mg in Silicon
Sigmund, H.; Weiss, D.
Book Article
1983Implantation doping of germanium with Be, Mg, Zn und B-ions
Metzger, M.; Zhang, Z.; Schmiedt, B.; Ryssel, H.
Book Article
1983Laser annealing
Ryssel, H.; Goetzlich, J.
Book Article
1983Low cost analog signal fiber link with 300 keV isolation
Kranz, H.; Steiner, S.
Book Article
1983Studies on the lattice position of boron in silicon
Fink, D.; Carstanjen, H.D.; Jahnel, F.; Muller, K.; Ryssel, H.; Osei, A.; Biersack, J.P.
Journal Article
1982Ion Implantation.
Ryssel, H.
Book Article
1982Range distributions.
Ryssel, H.
Book Article
1981Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP.
Bimberg, D.; Bubenzer, A.
Journal Article