Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2003Metastable behavior of anion-site donors in InAs
Risse, M.; Vianden, R.
Journal Article
1994Influence of Coulombic broadened DX center energy levels on free electron concentration in delta-doped AlxGa1-xAs/GaAs quantum wells
Brunthaler, G.; Seto, M.; Stöger, G.; Köhler, K.
Journal Article
1994Influence of DX center structure on Si modulation delta-doping in AlGaAs/GaAs quantum wells.
Brunthaler, G.; Seto, M.; Stöger, G.; Ostermayer, G.; Köhler, K.
Journal Article
1994On the electron capture kinetics of DX centers in AlxGa1-xAs-Si.
Stöger, G.; Brunthaler, G.; Ostermayer, G.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1993Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.
Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Journal Article
1990Deep donor levels -DX centers- in III-V semiconductors.
Mooney, P.M.
Journal Article
1990Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1-xAs-Si.
Brunthaler, A.; Köhler, K.
Journal Article